35 W 960 MHz RF POWER TRANSISTOR NPN
Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
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TP3034
TP3034
35 W 960 MHz RF POWER TRANSISTOR NPN
2779, transistor
transistor j8
j8 er capacitor
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35 W 960 MHz RF POWER TRANSISTOR NPN
Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
Text: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation
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MAPRST0912-350
35 W 960 MHz RF POWER TRANSISTOR NPN
TRANSISTOR 618
J1 TRANSISTOR
1090
35 W 960 MHz
MAPRST0912-350
1215
transistor j08
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP3034/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3034 The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast
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TP3034/D
TP3034
TP3034
TP3034/D*
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CW 7805
Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and
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TP3006/D
TP3006
TP3006
TP3006/D*
CW 7805
CW 7805 regulator
regulator CW 7805
TRANSISTOR CW 7805
5Bp smd transistor data
smd-transistor 5bp
5Bp smd
7805 smd
SMD DIODE gp 317
smd-transistor DATA BOOK
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motorola rf Power Transistor Data Book
Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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MRF6409
MRF6409
DL110/D)
motorola rf Power Transistor Data Book
Motorola Power Transistor Data Book
BAS16 transistor
transistor f1 j39
motorola rf device data book
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Motorola transistor 9410
Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics
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TP3032/D
TP3032
TP3032
TP3032/D*
Motorola transistor 9410
91 c6
bd135 equivalent
icer capacitor
motorola 1N4148
1N4148
BD135
NT 407 F TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
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MRF6414
MRF6414
DL110/D)
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CW 7805 regulator
Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805 lc 7805 transistor SMD J9 GL 7805 REGULATOR IC 7805 SMD lu 7805 7805 voltage regulator IC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3006 The RF Line NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features
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TP3006
TP3006
CW 7805 regulator
TRANSISTOR CW 7805
regulator CW 7805
cw 7805
lc 7805
transistor SMD J9
GL 7805
REGULATOR IC 7805 SMD
lu 7805
7805 voltage regulator IC
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J103 transistor 3 pin
Abstract: J103 transistor C6B3 UT-85-M17
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.
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MRF897
J103 transistor 3 pin
J103 transistor
C6B3
UT-85-M17
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smd transistor l32
Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter
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BLV945B
OT324
OT324
7110fl2fc.
OT324.
ocn23ia
smd transistor l32
SMD Transistor SAs
transistor SMD t30
sas smd transistor
SMD l32 Transistor
SMD L31
SMD CAPACITOR L29
SMD Transistor t30
SMD electrolytic capacitor
SMD CAPACITOR L27
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and
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G-200,
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20219
Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
Text: e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and
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G-200,
1-877-GOLDMOS
1301-PTB
20219
35 W 960 MHz RF POWER TRANSISTOR NPN
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Motorola Power Transistor Data Book
Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
Motorola Power Transistor Data Book
BAS16
DL110
motorola rf Power Transistor
NT 407 F TRANSISTOR
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NT 407 F power transistor
Abstract: DL110
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409/D
MRF6409
MRF6409
MRF6409/D
NT 407 F power transistor
DL110
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MRF6409
Abstract: BAS16 motorola rf Power Transistor
Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high
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MRF6409
MRF6409
BAS16
motorola rf Power Transistor
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motorola rf device
Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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MRF6409
MRF6409
DL110/0)
DL110/D)
motorola rf device
DL110
BAS16 transistor
DL1100
Motorola Power Transistor Data Book
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.
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MRF897R
MRF897R
DL110/D)
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DL110
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6409 is designed for GSM base stations applications. It incorpo rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
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MRF6409
DL110/D)
DL110
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transistor rf m 1104
Abstract: DL110 015 j47 1N4007 BD135 MRF6414
Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics
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MRF6414
transistor rf m 1104
DL110
015 j47
1N4007
BD135
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15 w RF POWER TRANSISTOR NPN
Abstract: transistor rf m 1104
Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics
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MRF6414
MRF6414
MRF6414/D
15 w RF POWER TRANSISTOR NPN
transistor rf m 1104
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BLV97CE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171
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OT171
BLV97CE
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J297
Abstract: balun 300 75 ohm transistor bd136 150 watts power amplifier layout
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz.
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MRF899
J297
balun 300 75 ohm
transistor bd136
150 watts power amplifier layout
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TP3007S
Abstract: No abstract text available
Text: MOTOROLA Order this document by TP3007S/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3007S The TP3007S is designed for 24 volts common emitter base station amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed
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Untitled
Abstract: No abstract text available
Text: e PTB 20220 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,
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1-877-GOLDMOS
1301-PTB
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