405nm photodiode
Abstract: 780nm led 1 mw SFH2332 photodiode 650nm nep photodiode dvd cd GEOY6653 OHLY0598 405nm LED Q65110A6342 photodiode bluray
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
405nm photodiode
780nm led 1 mw
SFH2332
photodiode 650nm nep
photodiode dvd cd
GEOY6653
OHLY0598
405nm LED
Q65110A6342
photodiode bluray
|
350nm bis 700
Abstract: photodiode bluray
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
Q61150A6342
350nm bis 700
photodiode bluray
|
Untitled
Abstract: No abstract text available
Text: Schnelle PIN-Fotodiode High Speed PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 2332 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen von 350nm bis 780nm • Sehr kurze Schaltzeit im spezifizierten Wellenlängenbereich • Sehr kurze Schaltzeiten bei geringer
|
Original
|
PDF
|
350nm
780nm
|
osram bpx 65 photodiode
Abstract: No abstract text available
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant BPX 65 Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 350nm bis 1100nm • Kurze Schaltzeit (typ. 12 ns) • Hermetisch dichte Metallbauform (TO-18), geeignet bis 125 oC
|
Original
|
PDF
|
350nm
1100nm
Q62702P0027
osram bpx 65 photodiode
|
tci 571
Abstract: GMOY6011 OHLY0598 Q62702P0885
Text: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
350nm
820nm
350nm
tci 571
GMOY6011
OHLY0598
Q62702P0885
|
Untitled
Abstract: No abstract text available
Text: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
350nm
820nm
350nm
|
BPW21
Abstract: Q62702P0885 GMOY6011 OHLY0598
Text: Silicon Photodiode for the Visible Spectral Range Silicon Photodiode for the Visible Spectral Range Lead Pb Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350nm bis 820nm • Angepaßt an die Augenempfindlichkeit (Vλ)
|
Original
|
PDF
|
350nm
820nm
350nm
BPW21
Q62702P0885
GMOY6011
OHLY0598
|
UV diode 320 nm
Abstract: uv photodiode PDU-G102B uv photodiode wavelength 250 to 260 320nm
Text: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] QUARTZ WINDOW FILTER CAP WELDED Ø.118 [3.00] .055 [1.40] VIEWING ANGLE 61° CHIP ANODE 2X Ø.017 [0.43] .100 [2.54] .500 [12.70] Ø.181 [4.60] .112 [2.84] CATHODE CHIP DIMENSIONS INCH [mm]
|
Original
|
PDF
|
PDU-G102B
320nm
PDU-G102B
200nm
350nm
UV diode 320 nm
uv photodiode
uv photodiode wavelength 250 to 260
|
TSMC 180nm dual port sram
Abstract: TSMC 90nm sram tsmc 180nm sram voltage regulator I2C 10GBASE-T TSMC 90nm flash energy consumption in DVS TN1010 120C ARM926EJ-S
Text: PowerWise Adaptive Voltage Scaling AVS Technology Webinar Rick Zarr, PowerWise® Technologist Joy Taylor, Marketing Manager Feb 25, 2009 Webinar Objectives • Review power consumption of digital subsystems in various applications • Discuss PowerWise® Adaptive Voltage Scaling (AVS)
|
Original
|
PDF
|
|
R758
Abstract: R636 R636-10 TPMSA0027EC R758-10
Text: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response
|
Original
|
PDF
|
930nm)
S-164-40
TPMS1016E03
R758
R636
R636-10
TPMSA0027EC
R758-10
|
photodiode amplifier
Abstract: smoke detector schematic schematic SMPX160 pickup photodiode photodiode bias circuit
Text: SMPX160 SILICON PIN PHOTODIODE HYBRIDS THE SMPX160 HYBRID PHOTODIODE 0.66mm2 WITH INTEGRAL AMPLIFIER AND BG18 OPTICAL FILTER MECHANICAL DATA Dimensions in mm 8.9mm 5.9mm 25.0mm Pin1 Pin2 Pin4 Pin3 FEATURES: 8.2mm • HIGH RESPONSIVITY • PHOTODIODE SIZE: 1 x 1 mm note 1
|
Original
|
PDF
|
SMPX160
66mm2)
BG18OPTICAL
32nV/Hz
30KHz
photodiode amplifier
smoke detector schematic schematic
SMPX160
pickup photodiode
photodiode bias circuit
|
infra red sensors
Abstract: Aspheric Lens TO Can bandpass filter PLC biconvex lens
Text: SYSTEMS DIVISION PLASTIC OPTICAL COMPONENTS IMAGING AND NON-IMAGING PLASTIC OPTICAL COMPONENTS DESCRIPTION FEATURES: Due to customer requests Semelab has developed the capability to design and supply polymer based optical components. These devices can be used to complement the
|
Original
|
PDF
|
|
hamamatsu photomultiplier R300
Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
Text: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure
|
Original
|
PDF
|
|
hamamatsu c1000
Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
Text: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244
|
Original
|
PDF
|
C7244,
C7245
C7244
C7245
C7244
S-164-40
TAPP1027E01
hamamatsu c1000
A2098
transistor a2098
A4869
A4539
C1000-12
image intensifier quantum efficiency data
40VA
A3472-50
UV led 200nm
|
|
|
VCCD1024H
Abstract: Sarnoff Sarnoff Corporation ccd sensor back illuminated sarnoff uv ccd sensor 1000nm ir CCD-Sensor 300fps QE 45 frame transfer
Text: 1024 x 1024 CCD Sensor DESCRIPTION The Sarnoff 1024 x 1024 imager is a high p e rf o rmance, back illuminated CCD array designed for low noise operation from slow scan rates up to 300 frames per second full frame imaging. The imager uses vertical frame transfer architecture
|
Original
|
PDF
|
32-port
5000X
VCCD1024H
Sarnoff
Sarnoff Corporation
ccd sensor back illuminated
sarnoff uv ccd sensor
1000nm ir
CCD-Sensor
300fps
QE 45
frame transfer
|
SM980
Abstract: No abstract text available
Text: Products & Services 2015 FIBERCORE FIBERCORE Contents SECTION SECTION PAGE 1 About Fibercore Which fiber for which application? 6 - 11 2 SM Fiber for Harsh Environments, Ultra Bend Insensitive, RGB and Near Infra Red SM Fiber For Visible RGB Through To Near IR
|
Original
|
PDF
|
10685-B
SM980
|
elis 1024 cmos
Abstract: ccd KE DIODE Photon Vision Systems PDS0004
Text: PDS0004 REV. 10/31/00 Photon Vision Systems High Performance Linear CMOS Image Sensors ELIS CMOS IMAGER P.O Box 509 Cortland, NY 13045. tel. 607.756.5200 fax 607.756.5319 The Photon Vision Systems ELIS is a family of high performance linear image sensor designed for a wide variety of applications as a superior
|
Original
|
PDF
|
PDS0004
elis 1024 cmos
ccd KE DIODE
Photon Vision Systems
|
uv photodiode
Abstract: PDU-G102B 320nm
Text: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]
|
Original
|
PDF
|
PDU-G102B
320nm
PDU-G102B
200nm
350nm
uv photodiode
|
UV flame detection
Abstract: ammeter GUVA-S20ED
Text: UV-A Photodetector GUVA-S20ED Features Gallium Nitride based material Schottky-type photodiode No cut-off filters needed Intrinsic visible blindness High responsivity Low dark current Designed to operate in photovoltaic mode SMD plastic package : 1.6 x 0.8 × 0.4 mm
|
Original
|
PDF
|
GUVA-S20ED
076mm
UV flame detection
ammeter
GUVA-S20ED
|
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900
|
Original
|
PDF
|
element-14
element14
mdd 2605
HCPL 1458 8 pin opto
KS0108 128X64 graphical LCD
mdd 2601
transistor chn 952
hitachi INVC 618
Data Vision P135
H4 led smd headlight bulb
transistor CHN 64 946
transistor chn 943
|
SPARC64
Abstract: 180NM 400M GS21 sparc64 gp
Text: SPARC64 VII Fujitsu’s Next Generation Quad-Core Processor August 26, 2008 Takumi Maruyama LSI Development Division Next Generation Technical Computing Unit Fujitsu Limited All Rights Reserved,Copyright FUJITSU LIMITED 2008 Fujitsu Processor Development
|
Original
|
PDF
|
SPARC64TM
130nm
180nm
150nm
SPARC64
180nm
GS8800B
SPARC64
400M
GS21
sparc64 gp
|
dad1000
Abstract: 1076-746c 1076-740c 1076-714c 8.2v zener diode DN marking 5 watt zener discovery dmd package 1076-7bbc
Text: Product Preview Data Sheet TI DN 2503686 February 2005 DMD 0.7 XGA 12º DDR DMD Discovery This data sheet describes the 0.7XGA 12º DDR DMD Discovery™. May not be reproduced without permission from Texas Instruments Incorporated Copyright 2005 Texas Instruments Incorporated
|
Original
|
PDF
|
|
PDU-G101A
Abstract: UV 310 nm
Text: UV Enhanced GaN Detectors PDU-G101A PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm] .016 [0.40] SQ TO-46 PACKAGE
|
Original
|
PDF
|
PDU-G101A
365nm
PDU-G101A
200nm
350nm
UV 310 nm
|
Amplifier schematic diagrams 12v
Abstract: No abstract text available
Text: A dvanced P ho to nix , I nc . LARGE AREA AVALANCHE PHOTODIODES 631 and 641 Seiles cooled Modules PI’s solid state Large Area Avalanche Photodiodes LAAPD are available in easy to operate integrated modules. API’s 631 AC coupled and 641 DC coupled series
|
OCR Scan
|
PDF
|
|
