MJ13332
Abstract: No abstract text available
Text: tSztnL-donauctoi , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ13332 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEO(sus) = 350V(Min) • High Switching Speed
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MJ13332
100kHz
MJ13332
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY SPT6060/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET FEATURES: High Voltage Rating - 350V Sustaining
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SPT6060/3
10ADC
15ADC
20ADC
10ADC,
20ADC,
10VDC,
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Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 BDY47 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 350V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max)@ lc = 15A
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BDY47
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la 440 ic
Abstract: 10ADC
Text: SPT6060/3 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 20 AMP 350 VOLTS NPN DARLINGTON TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • High Voltage Rating - 350V Sustaining Fast Switching Capabilities / Fast Turn-off Time
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SPT6060/3
Curr60
10ADC,
20ADC,
10VDC,
150VDC
la 440 ic
10ADC
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seme
Abstract: BUL58A
Text: SEME BUL58A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85
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BUL58A
seme
BUL58A
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Untitled
Abstract: No abstract text available
Text: SEME BUL58A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85
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BUL58A
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NTE2311
Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V
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NTE2311
NTE2311
npn 1000V 15A
NPN Transistor VCEO 1000V
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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350V transistor npn 15a
Abstract: 300V transistor npn 2a 2N6678
Text: 2N6678 MECHANICAL DATA Dimensions in mm inches HIGH VOLTAGE NPN POWER TRANSISTOR 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )
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2N6678
350V transistor npn 15a
300V transistor npn 2a
2N6678
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Darlington NPN 250W
Abstract: MJ10021
Text: MJ10021 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high−voltage, high− speed, power switching in inductive circuits where fall time is critical. This device is particularly
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MJ10021
MJ10021
Darlington NPN 250W
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1500w audio amplifier circuit
Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004 General Information ON Semiconductor Standard Policies
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
1500w audio amplifier circuit
Schottky Diode 80V 6A
1500w PWM 220v
C106MG
marking code SS SOT23
tl494cn inverter datasheet
smps 1500W
MMSZ5231BT1G
dc 220v motor speed control circuit with scr
NCP1200P60G
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CS5170
Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
Text: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004 General Information Elimination Of Ozone Depleting Chemicals . . . .
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SGD501/D
74VCX16373DT
74VCX16373DTR
74VCX16374DT
16BIT
74VCX16374DTR
80SQ045N
80SQ045NRL
CS5170
MUR1620CTA
NTP3055
SBRS81100T3G
MC1741CP
2N5458 SUBSTITUTE
SPEED CONTROL of DC MOTOR tda1085c
DIODE SWCH 100V SS SOT23 TR
znr SF 471
NCP1200AP60
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k244 transistor
Abstract: AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31
Text: Limit Switches General information Limit switches, AL and K244 series • Description FUJI AL and K244 series limit switches have wide application in such industrial equipment as machine tools, printing machines, and transfer machines. These switches feature a sturdy aluminum diecast housing that is highly resistant to oil,
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SI-1020
SF-2025
SK-580
K244-xP-2
K244-gR-2
DEC1905a
k244 transistor
AL-P11
k244
PX1-C12S
PX1-C18S
AL-SP21
PM2S
sK413
AL-SK21
AL-SN31
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SDT55456
Abstract: SDT55472 SDT55560 to63 400v
Text: Devices. Inc VERY HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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Untitled
Abstract: No abstract text available
Text: Mil = ^ = IN I BUL58A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE
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BUL58A
T0220
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LT 5247
Abstract: LT 5247 H LT 5245 LT 5248 LT 5245 TRANSISTOR hz 524-2 generator 380v schematic LT 5242 H LT 5241
Text: TE XA S IN S T R { O PT O} 8961726 TEXAS bÊ IN STR Î F | ÒTbl72Li □□ 3b clfl5 0 6 2C OPTO) 36982 D TIP660, TIP661, TIP662 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 T-33-29 8 0 W a t 100° C Case Temperature
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Tbl72Li
TIP660,
TIP661,
TIP662
T-33-29
LT 5247
LT 5247 H
LT 5245
LT 5248
LT 5245 TRANSISTOR
hz 524-2
generator 380v schematic
LT 5242 H
LT 5241
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JAN2N3846
Abstract: JAN2N3847 SDT14304 SDT14305 SDT14414 NPN Transistor 10A 400V to3 npn power 20a 200v
Text: jg m m ^alîtran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER FORMERLY 14 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
JAN2N3846
JAN2N3847
SDT14304
SDT14305
SDT14414
NPN Transistor 10A 400V to3
npn power 20a 200v
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sdt14304
Abstract: 041m 200V transistor npn 20a
Text: -Jfotttran PlËM (yj(§¥ Ä1TM,©( Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 14) c^lcrfl CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
12MHz
12MHz
600pF
sdt14304
041m
200V transistor npn 20a
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200V transistor npn 20a
Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold
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99mml
600pF
600pF
SDT14305,
2N3846,
SDT14414,
200V transistor npn 20a
Transistor 200V 20A
2N3846
200V transistor npn 10a
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solitrondevices
Abstract: Solitron transistor c47
Text: 8368602 SOL ITRON D E V I C E S INC TS 95 D 0 2 8 3 7 D 3 DE |fi3bflbaa 000S037 1 |"~ Devices, inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 14 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum
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000S037
305mm)
solitrondevices
Solitron
transistor c47
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2NXXXX
Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389
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88DQ0787
fl2S40aa
2N389
2N424
2N1016B
2N1016C
2N1016D
2N1480
2N1481
2N1484
2NXXXX
NPN Transistor 10A 400V to3
transistor 2N 3440
TO-59 Package
c 3420 transistor
2n3741 MIL
transistor 2n 523
POWER TRANSISTORS 10A 400v pnp
power transistors table
TO111 package
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POWER TRANSISTORS 10A 400v pnp
Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389
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T-33-Ã
flES40aa
D0D07Ã
19S00
2N389
/173A
2N424
2N1016B
/102A
POWER TRANSISTORS 10A 400v pnp
NPN Transistor 10A 400V to3
2N1489
2N1468
pnp 400v 10a
1526a
2NXXXX
2N6350
2N1400
2N6352
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RCA TO-5
Abstract: 2N2016 2N3055 2n3772 2N6474 JAN 2N5781 2N5415 2N6107 2N6248 2N6372
Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C t o 15 A . . . P f t o 2 0 0 W . . . V C E t o 125 V 1« “ -3.5 max. Py«10W m ax . ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. P y - 40 W max. V E R S A W ATT
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IT039I
O-2201
lc-15
ITO-31
O-2201
90x90
RCA TO-5
2N2016
2N3055
2n3772
2N6474 JAN
2N5781
2N5415
2N6107
2N6248
2N6372
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