db9rf
Abstract: MCS8051 350w schematic diagram motor control maxon motor 118889 IRMCK203 brake failure maxon irf 4095 IR2106 APPLICATION NOTE maxon RE 50 IRMCS2033
Text: IRMCS2033 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 ! USA IRMCS2033 Low Voltage Sensorless Drive Design Platform for Permanent Magnet Motors IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: 310 252-7105 Data and specifications subject to change without notice. 4/13/2004
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IRMCS2033
IRMCK203
IR2175
IRMCS2033
db9rf
MCS8051
350w schematic diagram motor control
maxon motor 118889
brake failure maxon
irf 4095
IR2106 APPLICATION NOTE
maxon RE 50
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simulink matlab diode rectifier
Abstract: simulink matlab PFC boost converter varistor MOV1 simulink matlab fault current limiter "power factor correction" schematic PIC varistor 10e 471 simulink pfc buck 350w schematic diagram dc motor control SCHEMATIC DIAGRAM REVERSE KWH METER pid controller matlab source code
Text: AN1278 Interleaved Power Factor Correction IPFC Using the dsPIC DSC Authors: Vinaya Skanda and Anusheel Nahar Microchip Technology Inc. INTRODUCTION Digital power supplies are used in a wide variety of applications ranging from telecommunication power
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AN1278
DS01278A-page
simulink matlab diode rectifier
simulink matlab PFC boost converter
varistor MOV1
simulink matlab fault current limiter
"power factor correction" schematic PIC
varistor 10e 471
simulink pfc buck
350w schematic diagram dc motor control
SCHEMATIC DIAGRAM REVERSE KWH METER
pid controller matlab source code
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NTC 5R1
Abstract: IRF32N50 smd diode 600v 1a
Text: AC Motor Drive Table of Contents AC INPUT, Diode Bridges. 3 AC INPUT, Power Factor
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IRFP32N50K
IRFPS40N60K
O-247
GB15XP120KT
HFA25PB60
NTC 5R1
IRF32N50
smd diode 600v 1a
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Untitled
Abstract: No abstract text available
Text: ^£.m.L-donaactoi Lproducti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX25 NPN SILICON POWER TRANSISTOR 25.15(0.99] 26.67(1,05) 1067 (0.42) 11.18(0.44} 1,52(006) 343(0135) FEATURES
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BUX25
O-204AE
10MHz
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Untitled
Abstract: No abstract text available
Text: ^£mi-L.onauctoi L/-* 10 duets., line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUX23 NPN MULTI - EPITAXIAL POWER TRANSISTOR 6.SSIU2S. 5.151036. 10.07 |0,«. 11.IS 10.44' 1.5210.06. 3.43I0.13S.
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BUX23
144IU
O204AA)
10MHz
300ns
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Untitled
Abstract: No abstract text available
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
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BUX23
Abstract: NPN 400V 40A
Text: BUX23 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX23
O204AA)
10MHz
BUX23
NPN 400V 40A
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Untitled
Abstract: No abstract text available
Text: BUX23 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX23
O204AA)
10MHz
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Untitled
Abstract: No abstract text available
Text: BUX25 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX25
204AE
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BUX23
Abstract: NPN 350W
Text: BUX23 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX23
O204AA)
BUX23
NPN 350W
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npn high voltage transistor 500v 8a
Abstract: BUX25 npn silicon 500v 400v 7v 10mhz transistor npn silicon 500v 400v 7v 10mhz NPN 350W
Text: BUX25 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)
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BUX25
204AE
npn high voltage transistor 500v 8a
BUX25
npn silicon 500v 400v 7v 10mhz
transistor npn silicon 500v 400v 7v 10mhz
NPN 350W
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NPN 350W
Abstract: BUR52
Text: BUR52 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES 1 • HIGH PULSE POWER 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063)
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BUR52
O204AE)
NPN 350W
BUR52
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inverter+500w+project+report
Abstract: No abstract text available
Text: POWER - NIKKOHM 500W WATER COOLING NON-INDUCTIVE HIGH POWER RESISTORS RPH500 Features and Applications Small sized 500W water-cooled non-inductive resistor with a very low resistor temperature under operation. Flat plate resistance and twisted pair leads and special terminal structure patent are shown excellent
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RPH500
RPH500
inverter+500w+project+report
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igbt sgw25n120
Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3
SGW25N120
igbt sgw25n120
50S INFINEON
ir igbt 1200V 40A
IGBT 1200V 60A
igbt to247
PG-TO-247-3
igbt 1200V 40A short circuit
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SGW25N120
Abstract: IGBT 1200V 60A
Text: Preliminary SGW25N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGW25N120
O-247AC
Q67040-S4277
Mar-00
SGW25N120
IGBT 1200V 60A
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sgw25n120
Abstract: No abstract text available
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
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JESD-022
Abstract: SGW25N120 igbt sgw25n120
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
641-SGW25N120E8161
SGW25N120E8161
JESD-022
igbt sgw25n120
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g25n120
Abstract: SGW25N120 PG-TO-247-3-21 G25N120 TSC
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3-1
O-247AC)
G25N120
PG-TO-247-3-21
SGW25N120
PG-TO-247-3-21
G25N120 TSC
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SGW25N120
Abstract: No abstract text available
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
O-247AC
Q67040-S4277
Jan-02
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CM631
Abstract: No abstract text available
Text: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain
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MG50N2CK1
CM631
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 T O S H I B A <DISCRETE/OPTO> SEMICONDUCTOR ToJhtht D E | T 0 T 7 E S 0 0Dlti3SS 90D 16325 DT-33-35" -TOSHIBA G-TR MODULE MG50M1BK 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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DT-33-35"
MG50M1BK
MG50M1BK1
EGA-MG50M1BK1-4
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 3 7E D • Ô1331Ô7 SEMELAB JUL 0 6 ¡988 BUS 51 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for low voltage, high speed, power switching MECHANICAL DATA Dimensionsinmm FEATURES • LOW Vce sat * • 1-6 • FAST SWITCHING • HIGH SWITCHING CURRENTS
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D00D173
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Untitled
Abstract: No abstract text available
Text: S E M E LA B LTD 37E D JUL 0 6 1988 0 1 3 3 1 0 7 OGDGlbfl 7 SEMELAB BUR 50/BUR 50S NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for high current, high speed and high power applications M EC H A N IC A L DATA Dimensions in mm 30 m -V V/ m ax e 1-5 IT FEATURES
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50/BUR
27-17BUR
200mA
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Untitled
Abstract: No abstract text available
Text: SEMELAB 37E LTD J UL 6 Ô1331Ô7 I> 0Q0 Q1 7 M SEMELAB 1988 .V » B U S 52 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for low voltage, high speed, power switching M E C H A N IC A L D A T A D im e n sio n s in m m FEATU R ES • LO W V 4.1-6 CE SAT • FAST SWITCHING
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