P1 SOT-89
Abstract: No abstract text available
Text: SOT-89 Tape and Reel Data SOT-89 Packaging Configuration: Figure 1.0 Packaging Description: SOT-89 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multi layer film (Heat Activated
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OT-89
330cm
P1 SOT-89
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte
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L9D222G72BG3
400Mbps
208PBGA,
LDS-L9D222G72BG3-B
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX PRELIMINARY* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
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W3H128M72
Abstract: W3H128M72E-XSBX W3H128M72E
Text: White Electronic Designs W3H128M72E-XSBX Advanced* 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Package: CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H128M72E-XSBX
W3H128M72
W3H128M72E-XSBX
W3H128M72E
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W3H64M64E
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Write latency = Read latency - 1* tCK Package: Commercial, Industrial and Military Temperature Ranges • 1.0mm pitch
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W3H64M64E-XSBX
667Mbs
W3H64M64E
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FDC6305N
Abstract: LX1689 SGE2697-1 what is COG capacitor
Text: Winter 2001 Issue Article Roger Holliday Power Management Products LX1689: More Light, Fewest Parts When it comes to mobile electronics, we’re spoiled. We want it all — and to an amazing degree we get it. Desktop computers of old couldn’t begin to keep up with the power we
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LX1689:
LX1689,
LX1689
470pF
352MM
FDC6305N
SGE2697-1
what is COG capacitor
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Untitled
Abstract: No abstract text available
Text: W3H64M72E-XSBX W3H64M72E-XSBXF 512MB – 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS Data rate = 667, 533, 400 Mb/s 30% Space saving vs. FBGA Package: Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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W3H64M72E-XSBX
W3H64M72E-XSBXF
512MB
667Mbs
533Mbs
400Mbs
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84 FBGA
Abstract: W3H64M72E-XSBX fbga84 ccd400
Text: White Electronic Designs W3H64M72E-XSBX 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Organized as 64M x 72 • 1.0mm pitch Weight: W3H64M72E-XSBX - 2.5 grams typical
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W3H64M72E-XSBX
W3H64M72E-XSBX
84 FBGA
fbga84
ccd400
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7410
Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache
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7410E
WED3C7410E16M-XBHX*
256Kx72
25x21mm,
625mm2
352mm2
1329mm2
525mm2
x64/x72
7410
WED3C7410E16M-XBHX
WED3C750A8M-200BX
WED3C7558M-XBX
90Sn10Pb
63SN 37PB
CBGA 255 motorola
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CI 7410
Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Text: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications
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PC7410
256Kx72
16Mbit
BP123
CI 7410
7410 frequency divider
PIN CONFIGURATION 7410
cga motorola
7410
transistor 7410
Multi-Chip Modules motorola
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D80008
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: 1 00 1 enter-ter inated, u ull IO a age: 16 22 , 13 21 atri 2 1 all Matri all it : 1 00 S a e a ing oot rint er all en an ed, I edan e
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L9D340G64BG2
LDS-L9D340G64BG2-C
D80008
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Untitled
Abstract: No abstract text available
Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache
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7410E
WED3C7410E16M-XBHX*
256Kx72
625mm2
352mm2
1329mm2
525mm2
x64/x72
WED3C7410HITCE
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3E32M72S-XSBX ADVANCED* 32Mx72 DDR SDRAM FEATURES Data rate = 200, 250, 266MHz Package: • BENEFITS • 208 Plastic Ball Grid Array PBGA , 16 x 22mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#)
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W3E32M72S-XSBX
32Mx72
266MHz
W3E32M72S-ESSB
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Untitled
Abstract: No abstract text available
Text: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M72S-XB3X
32Mx72
333Mbs*
256MByte
256MB
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L9D340G64BG2I15
Abstract: DDR3-1066 DDR3-1333 L9D340G64B L9D340G64BG2
Text: PRELIMINARY INFORMATION L9D340G64BG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: • Vcc=VccQ=1.5V ± 0.075V • 1.5V center-terminated, push/pull I/O • Package: 16mm x 22mm, 13 x 21 matrix w/ 271balls
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L9D340G64BG2
271balls
LDS-L9D340G6BG2-A
L9D340G64BG2I15
DDR3-1066
DDR3-1333
L9D340G64B
L9D340G64BG2
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Untitled
Abstract: No abstract text available
Text: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM.
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W3E32M72S-XSBX
32Mx72
333Mbs*
256MByte
256MB
333Mbs
333Mbs,
333Mbs
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Untitled
Abstract: No abstract text available
Text: D2-PAK / TO-263 Tape and Reel Data D2-PAK Packaging Configuration: Figure 1.0 Packaging Description: D2-PAK parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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O-263
330cm
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WED3C750A8M-200BX
Abstract: No abstract text available
Text: PowerPC 750 /8Mbit SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7508M-200BX Features • • • A 200 MHz 750 RISC µProcessor 8 Mbit of Synchronous pipeline burst SRAM configured as 128Kx72 L2 Cache Extended temperature modules for industrial and military applications
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750TM/8Mbit
WED3C7508M-200BX
128Kx72
WED3C750A
WED3C7558M-300BX
WED3C750A8M-200BX*
WEDPN8M72V-XBX*
750sbd
WED3C750A8M-200BX
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W3H128M72E-XSBX
Abstract: 84 FBGA
Text: White Electronic Designs W3H128M72E-XSBX 128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667, 533, 400 Package: CK/CK# Termination options available • 0 ohm, 20 ohm • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Posted CAS additive latency: 0, 1, 2, 3 or 4
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W3H128M72E-XSBX
775mA
975mA
-100ps
250ps
350ps
400ps
W3H128M72E-XSBX
84 FBGA
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18CO
Abstract: No abstract text available
Text: White Electronic Designs W3H64M64E-XSBX ADVANCED* 64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Commercial, Industrial and Military Temperature Ranges • 208 Plastic Ball Grid Array PBGA , 16 x 22mm Organized as 64M x 64 • 1.0mm pitch
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W3H64M64E-XSBX
18CO
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W332M72V-XSBX
Abstract: No abstract text available
Text: White Electronic Designs W332M72V-XSBX 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: • 208 Plastic Ball Grid Array PBGA , 16 x 22mm The 256MByte (2Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing
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W332M72V-XSBX
32Mx72
133MHz
256MByte
728-bit
133MHz
W332M72V-XSBX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3H64M72E-XSBX ADVANCED* 64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES Data rate = 667*, 533, 400 Programmable CAS latency: 3, 4 or 5 Package: Posted CAS additive latency: 0, 1, 2, 3 or 4 • 208 Plastic Ball Grid Array PBGA , 16 x 22mm
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DSZ-44SBF-S
Abstract: DSZ-44 DSZ-44PF spare lamp bulb
Text: Model DSZ-44 series offers superior quality optics and reliable mechanical components. This exceptional quality allows users to efficiently perform tasks and maintain high productivity. A wide variety of stands and illuminators are available to suite many different applications. The DSZ-44 series features a zoom
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DSZ-44
DSZ-44T
250mm)
303mm)
160mm
219mm
220mm
DSZ-44SBF-S
DSZ-44PF
spare lamp bulb
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LXP-C0NNZ2-01-30Z7
Abstract: SSL-LX5093ID
Text: UNCONTROLLED DOCUMENT SC iO .75 PA R T N U M B E R REV. SSI—L X 5 Q 9 3 I D 3 5 6 C O N PRELIM INARY IN P / N DIR 5 .^0 CO.2 3 2 ] lf=20mA ELECTRO-OPTICAL CHARACTERISTICS TA=25T PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE 5,00 [0 ,1 9 7 ] REVERSE VOLTAGE
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LX5Q93ID356CQN
SSL-LX5093ID
DECL05DRE
LXP-C0NNZ2-01-30Z7
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