Error Detection
Abstract: altera stratix ii ep2s60 circuit diagram AN25 EP1S60 CRC-IEEE802
Text: Error Detection and Recovery Using CRC in Altera FPGA Devices Application Note 357 January 2007, Version 1.3 Introduction In critical applications, such as avionics, telecommunications, system control, and military applications, it is important to be able to:
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cyclic redundancy check verilog source
Abstract: vhdl code CRC 32 JTAG error detection code in vhdl AN25 EP1S60 crc 16 verilog
Text: Error Detection and Recovery Using CRC in Altera FPGA Devices Application Note 357 July 2008, Version 1.4 Introduction In critical applications, such as avionics, telecommunications, system control, and military applications, it is important to be able to:
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2n3637
Abstract: No abstract text available
Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted
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2N3634,
2N3634L,
2N3635,
2N3635L,
2N3636,
2N3636L,
2N3637,
2N3637L
2N3634/L
2N3635/L
2n3637
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2N3635
Abstract: 2n3634
Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted
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2N3634,
2N3634L,
2N3635,
2N3635L,
2N3636,
2N3636L,
2N3637,
2N3637L
205AA
2N3634L
2N3635
2n3634
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2N3634
Abstract: 2N3635 JAN 2N3637 2N3635
Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted
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2N3634,
2N3634L,
2N3635,
2N3635L,
2N3636,
2N3636L,
2N3637,
2N3637L
MIL-PRF-19500/357
2N3634/L
2N3634
2N3635 JAN
2N3637
2N3635
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HN58V256A
Abstract: HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12 Hitachi DSA00777
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS
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HN58V256A
HN58V257A
32768-word
ADE-203-357
64-byte
HN58V256AFP-12
HN58V256AT-12
HN58V257AT-12
Hitachi DSA00777
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MB86S02A
Abstract: YUV422 infrared cmos digital image cmos SENSOR cmos QCIF sensor cmos IMAGE SENSOR, Low power consumption cmos digital camera sensor MB86S02 CCIR656 auto sensor switch
Text: ▼ CMOS Sensor - MB86S02A Features z 1/7-inch optical format z Array size is 357 Horizontal and 293 (Vertical) pixels z RGB mosaic is used as color filter with micro lens z Lowest power consumption among all the CMOS image sensors in the world (30 mW at 15 frames per second)
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MB86S02A
YCbCr422
YUV422
YUV422/YCbCr
MB86S02
CMOS-FS-20930-4/2002
MB86S02A
YUV422
infrared cmos digital image
cmos SENSOR
cmos QCIF sensor
cmos IMAGE SENSOR, Low power consumption
cmos digital camera sensor
MB86S02
CCIR656
auto sensor switch
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gate drive protetion with transistor
Abstract: HN58V256A HN58V256AFP-12 HN58V256AT-12 HN58V257A HN58V257AT-12
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word × 8-bit. Employing advanced MNOS memory technology and CMOS
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HN58V256A
HN58V257A
32768-word
ADE-203-357
64-byte
gate drive protetion with transistor
HN58V256AFP-12
HN58V256AT-12
HN58V257AT-12
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Royer oscillator circuit diagram
Abstract: PM6064 smps isolated 12v output smps ic smd 8 pin DATA SHEET OF IC 7909 mc34063a step down external transistor 267M1602226 Royer oscillator mullard toroids computer smps circuit diagram
Text: AP-357 APPLICATION NOTE Power Supply Solutions for Flash Memory MICHAEL EVANS ANIL SAMA BRIAN DIPERT APPLICATIONS ENGINEERING INTEL CORPORATION December 1995 Order Number 292092-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-357
MAX734
MAX761
MAX662
MAX756
LT1301
PM6064
MAX732
Royer oscillator circuit diagram
smps isolated 12v output
smps ic smd 8 pin
DATA SHEET OF IC 7909
mc34063a step down external transistor
267M1602226
Royer oscillator
mullard toroids
computer smps circuit diagram
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EN-6100-4-5
Abstract: EN6100-4-5 IDT82V2048 EN 6100-4-5 IDT82EBV2048 IDT82V2048L IDT82V2054 IDT82V2058 AN-357 IDT82V2044
Text: 1+1 PROTECTION WITHOUT RELAYS USING IDT82V2044/48/48L & IDT82V2054/58/58L HITLESS PROTECTION SWITCHING 1.0 APPLICATION NOTE AN-357 INTRODUCTION line card to the secondary line card without the use of external relays. As each line card communicates directly to the backplane, a primary to secondary switch occurs in a minimal amount of time with little traffic disruption. This application note will provide some guidelines for implementing
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IDT82V2044/48/48L
IDT82V2054/58/58L
AN-357
IDT82V2044
IDT82V2048
IDT82V2048L
IDT82V2054
IDT82V2058
IDT82V2058L
IDT82V2048.
EN-6100-4-5
EN6100-4-5
IDT82V2048
EN 6100-4-5
IDT82EBV2048
IDT82V2048L
IDT82V2054
IDT82V2058
AN-357
IDT82V2044
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237D5PZ Microcontroller identical to LM4F132C4QC D ATA SHE E T D S -T M 4C 1237 D5 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 357 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1237D5PZ
LM4F132C4QC)
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE AN_262 FT_APP_FT_CLOCKS Version 1.1 Document Reference No.: FT_000907 Issue Date: 2013-11-01 This document is to introduce the FT Clock Demo Application. The objective of the Demo Application is to enable users to become familiar with the usage of the FT800, the design flow, and
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FT800,
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Untitled
Abstract: No abstract text available
Text: Rugged Infrared Thermocouple 11° 5:1 Field of View Integral Air Cool/ Purge Head ߜ High Quality Infrared Thermocouple ߜ All Stainless Steel Construction ߜ 5:1 Field of View ߜ Built-in Air Purge ߜ J, K, E or T Thermocouple Output Signal ߜ Use With Standard Thermocouple
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OS36-5
OS36-5-E-140F-GMP
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Untitled
Abstract: No abstract text available
Text: Synchronized Crystal Oscillator, General Requirements AN-ASXOXG-X Series Data Sheet 1138B Rev. B U.S. Patent Number 7,812,682 Description The Synchronized Crystal Oscillator SXO is Sync-N-Scale’s scalable, distributed frequency source component. Together with the SCC (Data sheet 1139A) they form the basis for a synchronous,
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1138B
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Untitled
Abstract: No abstract text available
Text: Application Notes Data Sheet 1145C Sync-N‐Scale High‐Availability Features Does your clocking design depend on a single frequency source for all or part of your otherwise high‐availability design? Have you deliberately partitioned your
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1145C
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Untitled
Abstract: No abstract text available
Text: Signal Conditioning Circuit for Synchronized Crystal Oscillators Ensemble, General Requirements AN-ASCCXX-X Series Data Sheet 1138A Rev. B U.S. Patent Number 7,812,682 Description The Signal Conditioning Circuit SCC converts/translates the Sync-N-Scale synchronization bus
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17x14x6
1139B)
15pf/10K
70MHz
125MHz
250MHz
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1121a
Abstract: No abstract text available
Text: CRYSTAL OSCILLATORS Data Sheet 1121A AB-X3A2XX-X Series SINEWAVE VCXO Rev. A Description The AB-X3A2XX Series of voltage controlled crystal oscillators VCXO provides high frequency with Sinewave outputs. The device does not use any frequency multiplication, providing
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000MHz
100kHz
10KHz
100MHz
1121a
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Untitled
Abstract: No abstract text available
Text: Data Sheet 1108A CRYSTAL OSCILLATORS AN-XA32CXX-X Series HF SMD TCXO Ultra Low Phase Noise Rev. - Description: The AN-XA32CXX Series of SMD temperature compensated crystal oscillators TCXO , provides High Frequency with excellent temperature stability, extremely
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AN-XA32CXX-X
AN-XA32CXX
17x14x6mm
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Untitled
Abstract: No abstract text available
Text: CRYSTAL OSCILLATORS Data Sheet 1121A AB-X3A2XX-X Series SINEWAVE VCXO Rev. B Description The AB-X3A2XX Series of voltage controlled crystal oscillators VCXO provides high frequency with Sinewave outputs. The device does not use any frequency multiplication, providing
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000MHz
10KHz
100KHz
100MHz
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1108a
Abstract: TCXO
Text: Data Sheet 1108A CRYSTAL OSCILLATORS AN-XA32CXXX-X Series HF SMD TCXO/VCTCXO Ultra Low Phase Noise Rev. A Description: The AN-XA32CXXX Series of SMD temperature compensated crystal oscillators TCXO/VCTCXO , provides High Frequency with excellent temperature stability,
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AN-XA32CXXX-X
AN-XA32CXXX
17x14x6mm
1108a
TCXO
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Untitled
Abstract: No abstract text available
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word X 8-bit. Employing advanced MNOS memory technology and CMOS
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HN58V256A
HN58V257A
32768-word
ADE-203-357
64-byte
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Untitled
Abstract: No abstract text available
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM 's organized as 32768-w ord x 8-bit, Em ploying advanced MNOS memory technology and CMOS
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HN58V256A
HN58V257A
32768-word
ADE-203-357
32768-w
64-byte
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Untitled
Abstract: No abstract text available
Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM’s organized as 32768-word x 8-bit. Employing advanced MNOS memory technology and CMOS process and
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HN58V256A
HN58V257A
32768-word
ADE-203-357
64-byte
110are
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits* M o n o lith ic A m p lifie r s 50Q Drop-In & Surface Mount B roadband DC to 8 GHz All specifications at 25°C G A IN . dB T y p ic a l Ö FREQ GHz ovei frequency, GHz MODEL NO. ERA-1 ERA-2 ERA-3 H , 0.1 1 2 3 4 6 8 D C -8 12.2 12.1 11.8 11.5 11.3 11.0 10.2
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