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    35N60C5 Search Results

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    35N60C5 Price and Stock

    Littelfuse Inc IXKH35N60C5

    MOSFET N-CH 600V 35A TO247AD
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    DigiKey IXKH35N60C5 Tube 359 1
    • 1 $8.18
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    • 100 $6.72667
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    Newark IXKH35N60C5 Bulk 300
    • 1 -
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    • 1000 $7.05
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    IXYS Corporation IXKH35N60C5

    MOSFETs 35 Amps 600V
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    Mouser Electronics IXKH35N60C5
    • 1 $8.11
    • 10 $8.1
    • 100 $6.72
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    TTI IXKH35N60C5 Tube 300
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    TME IXKH35N60C5 1
    • 1 $11.58
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    Others IXKH35N60C5

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    Chip 1 Exchange IXKH35N60C5 60
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    IXYS Integrated Circuits Division IXKH35N60C5

    MOSFET DIS.35A 600V N-CH TO247-3 COOLMOS THT
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    Ozdisan Elektronik IXKH35N60C5
    • 1 $12.46079
    • 10 $12.46079
    • 100 $11.6456
    • 1000 $11.6456
    • 10000 $11.6456
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    35N60C5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S  D(TAB) Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a

    35n60c

    Abstract: ixkp35n60c5m
    Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 35N60C5M O-220 20080310a 35n60c ixkp35n60c5m

    IXKH35N60C5

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c IXKH35N60C5

    DSA003710

    Abstract: No abstract text available
    Text: IXKH 35N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 35N60C5 O-247 20070625a DSA003710

    35n60

    Abstract: IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 35 A VDSS = 600 V RDS on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)


    Original     		PDF 35N60C5 O-247 O-220 20080523a 35n60 IXKH35N60C5 35n60c MOSFET IXYS TO-220 35n60c5 IXKP35N60C5 MOS-FET 1307 L-120 AB

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 IXKP 35N60C5 Advanced Technical Information ID25 = 35 A = 600 V VDSS RDS on max = 0.1 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP) G


    Original     		PDF 35N60C5 35N60C5 O-247 O-220

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20090209c

    Untitled

    Abstract: No abstract text available
    Text: IXKH 35N60C5 COOLMOS * Power MOSFET ID25 = 35 A VDSS = 600 V RDS on max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 35N60C5 O-247 20080310b

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2