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    35N120A Price and Stock

    IXYS Corporation IXSH35N120A

    IGBT 1200V 70A 300W TO247
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    IXYS Corporation IXSK35N120AU1

    IGBT 1200V 70A 300W TO264
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    IXYS Corporation IXSN35N120AU1

    IGBT MOD 1200V 70A 300W SOT227B
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    35N120A Datasheets Context Search

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    35n120au1

    Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
    Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 35N120AU1 35n120au1 IXSX35N120AU1 IGBT 500V 35A 35N120AU

    IGBT 500V 35A

    Abstract: 35n120a
    Text: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


    Original     		PDF 35N120A O-247 S35N12 IXSH35N120 IGBT 500V 35A 35n120a

    IXLK35N120AU1

    Abstract: No abstract text available
    Text: IGBT with Diode IXLK 35N120AU1 VCES I C25 VCE sat = 1200 V = 58 A = 3.6 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous


    Original     		PDF 35N120AU1 IXLK35N120AU1

    IXLN35N120AU1

    Abstract: No abstract text available
    Text: IGBT with Diode IXLN 35N120AU1 VCES I C25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1200 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous


    Original     		PDF 35N120AU1 IXLN35N120AU1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 35N120AU1 150perature

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 35N120AU1 O-247TM IXSX35N120AU1)

    IXLN35N120A

    Abstract: td 25 n 1200
    Text: IGBT IXLN 35N120A VCES IC25 VCE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability E Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V


    Original     		PDF 35N120A IXLN35N120A td 25 n 1200

    IXSN35N120AU1

    Abstract: IXSN35N120AU IXSN35N120 35n120au1
    Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE sat 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A miniBLOC, SOT-227 B 1 2 VGES Continuous ±20 V


    Original     		PDF 35N120AU1 OT-227 IXSN35N120AU1 IXSN35N120AU IXSN35N120

    35N120A

    Abstract: IXSH35N120A
    Text: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous


    Original     		PDF 35N120A 35N120A IXSH35N120A

    IXSH 35N120AU1

    Abstract: 35N120AU1
    Text: High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE sat = 1200 V = 70 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM


    Original     		PDF 35N120AU1 IXSH 35N120AU1 35N120AU1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High speed IGBT IXSH 35N120A VCES IC25 VCE sat Maximum Ratings TO-247 AD = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20


    Original     		PDF 35N120A O-247 S35N12 IXSH35N120

    IXSN35N120

    Abstract: No abstract text available
    Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings


    OCR Scan     		PDF 35N120AU1 OT-227 IXSN35N120AU1 4bflb22b IXSN35N120

    Untitled

    Abstract: No abstract text available
    Text: OIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V C25 v CE sat High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES v¥ T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M il 1200 V cgr Maximum Ratings


    OCR Scan     		PDF 35N120AU1 O-264

    Untitled

    Abstract: No abstract text available
    Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25


    OCR Scan     		PDF 35N120AU1 to150 O-264AA JEDECTO-264AA 35N120AU1

    35n120au1

    Abstract: C8750 35N120 35N120AU
    Text: DIXYS High Voltage IGBT with Diode IXSN 35N120AU1 V CES I 1200 V 70 A 4V C25 VCE sat Short Circuit SOA Capability Symbol Test Conditions V CES Tj =25°Cto 150°C 1200 V VCGn Tj = 25°Cto150°C ;R GE= 1 MQ 1200 A vGES v GEM Continuous 420 V Transient £30


    OCR Scan     		PDF 35N120AU1 Cto150 OT-227B, 35n120au1 C8750 35N120 35N120AU

    35n120

    Abstract: No abstract text available
    Text: □IXYS High Voltage, High speed IGBT IXSH 35N120A VCES C25 v CE sat = 1200 V = 70 A = 4V Short Circuit SOA Capability Symbol Test Conditions v CES T j = 25° C to 150° C 1200 V VCQR T j = 25°C to 150°C; RGE= 1 MQ 1200 V vQES vGEM Continuous ±20 V T ransient


    OCR Scan     		PDF 35N120A O-247 O-247 35N120 35N120AU1

    35N120AU1

    Abstract: IG17
    Text: n ix Y S High Voltage IGBT with Diode VCES 'cas IXSX 35N120AU1 V CE SAT, = 1200 V = 70 A = *V PLUS 247 package Prelim inary data Symbol Test Conditions v' ces v CGR ^ Maximum Ratings = 25° C to 150° C V 1200 V v GES v*GEM Continuous ±20 V Transient ±30


    OCR Scan     		PDF 247TM 35N120AU1 O-247HL O-247 35N120AU1 IG17

    RM18T

    Abstract: IXLK35N120AU1
    Text: DIXYS IGBT with Diode IXLK 35N120AU1 VCES = 1200 V = 58 A = 3.6 V IC25 VCE sat High Short Circuit SOA Capability Symbol Test C onditions v CES Tj = 25°C to 150°C 1200 V V CGR T.J = 25°C to 150°C; RrP = 1 M£2 tit 1200 V V GES Continuous +20 V V GEM Transient


    OCR Scan     		PDF 35N120AU1 O-264 tur90 RM18T IXLK35N120AU1

    Untitled

    Abstract: No abstract text available
    Text: nixY S High Voltage, High speed IGBT IXSH 35N120A VCES = 1200 V I = 70 A C25 = 4V CE sat Short Circuit SOA Capability Sym bol Test C onditions VC E S ^ vCGR T,J = 25°C to 150°C;’ RrP = 1 MQ Cat v* G E S Maxim um Ratings = 25°C to 150°C 1200 V 1200 V


    OCR Scan     		PDF 35N120A

    IXLN35N120AU1

    Abstract: DIXYS 35N120AU1
    Text: DIXYS IGBT with Diode IXLN 35N120AU1 V CES ^C25 v v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Symbol Test C onditions Maximum Ratings v CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 1200 V VGES


    OCR Scan     		PDF 35N120AU1 OT-227 IXLN35N120AU1 DIXYS 35N120AU1

    IXLN35N120A

    Abstract: 1503VC
    Text: DIXYS IXLN 35N120A IGBT V CES IC25 v CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability P re lim in a ry d a ta Maximum Ratings Symbol Test Conditions v CES I, V CGR T j = 25°C to 150°C; RGE = 1 M i 1 v" g e s 1200 V 1200 V Continuous +20


    OCR Scan     		PDF 35N120A OT-227 IXLN35N120A 1503VC

    MD 5034

    Abstract: 35n120 IXLN35N120AU1 35N120AU1 DDD373D IXYS IGBT 0504N
    Text: □IXYS IGBT with Diode IXLN 35N120AU1 v v ¥ ces ^C 25 C E sa t = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability P re lim in a ry d a ta Symbol Test Conditions v CES ^ = 25°C to 150°C 1200 V VCGR ^ = 25°C to 150°C; RGE = 1 Mi2 1200 V v GES


    OCR Scan     		PDF 35N120AU1 OT-227 DDD373D MD 5034 35n120 IXLN35N120AU1 DDD373D IXYS IGBT 0504N

    35N120AU3

    Abstract: ixys igbt
    Text: □IXYS Advanced Data IXSN 35N120AU2 IXSN 35N120AU3 IGBT with Diode CES ^C25 vw CE sat = 1200 V = 50 A = 3.6 V Buck & Boost Configuration Short Circuit SOA Capability Symbol Test Conditions v CES T j =25° Cto 150° C 1200 V vCGR Tj = 2 5 °C to 1 5 0 °C ;R GE= 1 MO


    OCR Scan     		PDF 35N120AU2 35N120AU3 OT-227 E153432 35N120AU3 ixys igbt

    Untitled

    Abstract: No abstract text available
    Text: I IXLN 35N120A IGBT V CES IC25 V CE sat = 1200 V = 40 A = 3.5 V High Short Circuit SOA Capability Prelim inary data Maximum Ratings Symbol Test Conditions v CES Tj = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C;' F U = 1 MC2 (a t 1200 V v GES Continuous


    OCR Scan     		PDF 35N120A OT-227 250fc