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    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ 36 TC 8V O 8Q 1. 01 IN V 35 64 -1 18 IQ UT N RS -G The InQor quarter-brick converter series is composed


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    PDF IQ64xxxQTXxxx 8-135V 3000Vdc

    Untitled

    Abstract: No abstract text available
    Text: Technical Specification IQ64xxxQTXxxx 18-135V 1.8-48V 100W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter A 36 @ UT 8V O 1. 01 V 35 64 -1 18 IQ IN 8Q TC 36 N RS -G The InQor quarter-brick converter series is composed


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    PDF IQ64xxxQTXxxx 8-135V 3000Vdc

    CHN 044 VW

    Abstract: NB18
    Text: CMOS SyncBiFIFO with Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2 IDT723624 IDT723634 IDT723644 • Port B bus sizing ot 36-bits long word , 18-bits (word) and 9-bits (byte) • Big- or Little-Endian tormat tor word and byte bus sizes • Master Reset clears data and contigures FIFO, Partial


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    PDF IDT723624-256 IDT723634-512 IDT723644-1 IDT723624 IDT723634 IDT723644 36-bits 18-bits PK128-1 CHN 044 VW NB18

    Untitled

    Abstract: No abstract text available
    Text: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy­


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    PDF GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GMM7362000BS/BSG-60/70/80 GMM7361000BSG/BSGS GMM7362000BS/BSG 1IV13Q- JliJULNJL1111111 IJ11IUI11IL!

    lj26

    Abstract: D35B D35A
    Text: LH5420 256 x 36 x 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 x 36-bit FIFO Buffers • PQFP to PGA Package Conversion * • Full 36-bit Word Width FUNCTIONAL DESCRIPTION


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    PDF LH5420 36-bit 36/18/9-bit 132-pin 0D1L273 132-Pin, PQFP132-P-S950) LH5420P-25 lj26 D35B D35A

    SH 6770

    Abstract: No abstract text available
    Text: MET'f* JE/ OCT 15 1992 MC-428000A36 8,388,608 X 36-Bit Dynamic CMOS RAM Module W NEC Electronics Inc. Prelim inary Information _ September Description Pin Configuration The M C-428000A 36 is a fast-page dynam ic RAM mod­ ule organized as 8,388,608 words by 36 bits and de­


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    PDF MC-428000A36 36-Bit C-428000A 72-Pin SH 6770

    MB87030

    Abstract: sdb01 MB87031 EXBF fpt-1 MB87035
    Text: MB87035/36 SCSI Protocol Controller SPC for use with Differential or Single-end Drivers Edition 1.0 September 1989 GENERAL DESCRIPTION The MB87035/36 SCSI Protocol Controller (SPC) Is a CMOS LSI circuit specifically designed to control a Small Computer Systems Interface (SCSI). The MB87035/36 is an enhanced version of Fujitsu’s


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    PDF MB87035/36 MB87035/36 MB87030 MB87030, 28-bit sdb01 MB87031 EXBF fpt-1 MB87035

    TC55WD836FF

    Abstract: TC55WD836FF-133
    Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36


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    PDF TC55WD836FF-133 144-WORD 36-BIT TC55WD836FF LQFP1OO-P-1420-0

    TC55WD836FF

    Abstract: TC55WD836FF-133
    Text: TC55WD836FF-133#-150#-167 TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD836FF is a synchronous static random access memory SRAM organized as 262,144 words by 36


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    PDF TC55WD836FF-133 144-WORD 36-BIT TC55WD836FF LQFP1OO-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The ,uPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.


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    PDF 32K-WORD 36-BIT uPD431636L 768-word 36-bit

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS DESCRIPTION REV /c;n nan DATE KYLE 7 -2 5 -9 7 ¿ 0 ^ 8 /5 /9 7 REVISED o n APPROVED *.001 190-36, UNS-2B |A |.0 0 3 TIR "OSSP PLUG 051±-001 RECOMMENDED MOUNTING HOLE C'SINK 90° TO 0 - -200 MIN THD .190-36, UN5-2A ACROSS FLATS ELECTRICAL Nominal Impedance Ohms


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    PDF OU20-0261-01

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 128K x 36, 256K x 18, 3.3V SYNCHRONOUS SRAMS WITH ZBT FEATURE, 2.5V or 3.3V I/O, BURST COUNTER, AND PIPELINED OUTPUTS FEATURES: • 128K x 36, 256K x 18 memory configurations • Supports high performance system speed - 200 MHz


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    PDF IDT71V2556 IDT71V2558 IDT71V3556 IDT71V3558 IDT71 Vx556/58

    G80E 1A

    Abstract: g80e mt 6223 65-28
    Text: ASSMANN Socket Strips Electronic C o m p o n en ts Socket strips, pitch 1.27 mm H t* Single row D oub l« row nu, ‘•"H « £ £ : IDS » w |l “ Is sf » L J i.» No. of contacts Plating Partito. AWRL160/G36 36 Gold AWRL160/Z36 tin 36 3 a jo -1 -* , J f Tir


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    PDF AWRL160/Z36 AWRL160/G36 AWRZ16VG20 VG100 AWRH160/G36 AWRH16Q/Z36 160/G20SM 160/G40SM 160/G60SM 1G0/G80SM G80E 1A g80e mt 6223 65-28

    Untitled

    Abstract: No abstract text available
    Text: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y ­ n am ic RAM M O D U LE w hich is assem b led 8


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    PDF GMM7361000SG/SGS-60/70/80 GMM7362000SG-60/70/80 7361000SG 7362000SG cito38) M7361000SG/SGS 7362000SG GMM7362000SG

    Untitled

    Abstract: No abstract text available
    Text: i l 1992 MC-424000A36 4,194,304 X 36-Bit Dynamic CMOS RAM Module LlMJ W NEC Electronics Inc. Preliminary Information August 1992 _ Description Pin Configuration The MC-424000A36 is a fast-page dynamic RAM mod­ ule organized as 4,194,304 words by 36 bits and de­


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    PDF MC-424000A36 36-Bit MC-424000A36 72-Pin

    ic nn 5198 k

    Abstract: nn 5198 k mcm54400
    Text: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory


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    PDF MCM36104 72-lead MCM54400AN MCM36200 ic nn 5198 k nn 5198 k mcm54400

    14D241

    Abstract: Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR
    Text: Electrolytic Capacitors 1 Potentiometers. 21 Connectors 36 Intermediate Frequency Transformers.55 Varistors. 57 Thermistors 61


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    PDF 045x022x8 I245F 032x018x6 14D241 Bt141 mz3 ptc 14d561 PCB Potentiometers RA 16Y thermistor MZ4 OS 430 NR, VARISTOR

    t7775

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT /¿PD464318L, 464336L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT HSTL INTERFACE Description The /¿PD464318L is a 262,144 words by 18 bits, and the /¿PD464336L is a 131,072 words by 36 bits synchronous


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    PDF uPD464318L uPD464336L 256K-WORD 18-BIT 128K-WORD 36-BIT PD464318L PD464336L /JPD464318L /XPD464336L t7775

    Untitled

    Abstract: No abstract text available
    Text: SEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to o perate from a single + 5-volt power sup­


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    PDF MC-424512A36BH/FH 36-Bit MC-42512A36BH/FH 72-Pin

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. MC-424512A36BH/FH 524,288 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-42512A36BH/FH is a fast-page dynamic RAM module organized as 524,288 words by 36 bits and designed to operate from a single + 5-volt power sup­


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    PDF MC-424512A36BH/FH 36-Bit 72-Pin MC-42512A36BH/FH MC-424512A36BH/FH

    Untitled

    Abstract: No abstract text available
    Text: GoldStar GOLDSTAR ELECTRON CO., LTD. Description GMM7364000BS/BSG-60/70/80 4,194,304 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Features The GMM7364000BS/BSG is a 4M x36 Bits dy­ • 72 pins Single In-Line Package GMM736XXXXBS: Tin-Lead Plate namic RAM MODULE which is assembled 36


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    PDF GMM7364000BS/BSG-60/70/80 GMM7364000BS/BSG GMM736XXXXBS: GMM736XXXXBSG: 7364000BS/BSG MIN100 DDD3T31

    MC-421000A36

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is afast-p age dynamic RAM module organized as 1,048,576 words by 36 bits and designed to o perate from a single + 5-volt power supply. Ad­


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    PDF MC-421000A36 36-Bit 83YL-7246B MC-421000A36

    Untitled

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT /¿PD464518L, 464536L 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT LVTTL INTERFACE Description The ,uPD464518L is a 262,144 words by 18 bits, and the ,uPD464536L is a 131,072 words by 36 bits synchronous


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    PDF PD464518L, 464536L 256K-WORD 18-BIT 128K-WORD 36-BIT uPD464518L uPD464536L

    424256 memory

    Abstract: 424256
    Text: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power


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    PDF MC-42512A36, -424512A36 36-Bit MC-42512A36 MC-424512A36 72-Pin 424256 memory 424256