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    36C32 Search Results

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    36C32 Price and Stock

    Torex Semiconductor LTD XC6136C32A9R-G

    IC SUPERVISOR 1 CHAN USPQ-4B05
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    DigiKey XC6136C32A9R-G Cut Tape 90 1
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    XC6136C32A9R-G Digi-Reel 90 1
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    XC6136C32A9R-G Reel 5,000
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    Avnet Americas XC6136C32A9R-G Reel 12 Weeks 5,000
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    Mouser Electronics XC6136C32A9R-G 100
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    Newark XC6136C32A9R-G Cut Tape 4,897 1
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    • 10 $0.567
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    TME XC6136C32A9R-G 3
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    Avnet Silica XC6136C32A9R-G 17 Weeks 5,000
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    Torex Semiconductor LTD XC6136C32D9R-G

    IC SUPERVISOR 1 CHAN USPQ-4B05
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    DigiKey XC6136C32D9R-G Reel 5,000
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    Torex Semiconductor LTD XC9236C32DMR-G

    IC REG BUCK 3.2V 600MA SOT25
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    DigiKey XC9236C32DMR-G Reel 3,000
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    Avnet Americas XC9236C32DMR-G Reel 8 Weeks 3,000
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    Torex Semiconductor LTD XC6136C32DMR-G

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    DigiKey XC6136C32DMR-G Reel 3,000
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    Avnet Americas XC6136C32DMR-G Reel 8 Weeks 3,000
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    Mouser Electronics XC6136C32DMR-G
    • 1 $0.56
    • 10 $0.473
    • 100 $0.354
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    Torex Semiconductor LTD XC6136C32BMR-G

    IC SUPERVISOR 1 CHANNEL SOT25
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    DigiKey XC6136C32BMR-G Reel 3,000
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    Avnet Americas XC6136C32BMR-G Reel 8 Weeks 3,000
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    Mouser Electronics XC6136C32BMR-G
    • 1 $0.56
    • 10 $0.473
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    TME XC6136C32BMR-G 3
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    Avnet Silica XC6136C32BMR-G 17 Weeks 3,000
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    36C32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2 EC!"38 11   *2  


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 592D3645 428654F4 9C1132 9C11326511 54256DC B2778

    AD33b

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  5C4578C73D36 389C ! 57"59768!F3 9EC !3 &D2' 36A4F36 6*23428654F4 &+,-6.6/$& 0+61236.6$46)60+566.64 B817364835(3 # 97D11324835(3 # :FF314(4F2373


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 5C4578C 73D36 36A4F3 428654F4 97D1132 97D11326411 E32F32 AD33b

    36C32-55

    Abstract: Seeq 36C16 24128 36c3240
    Text: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEQ's36C16/32 are high speed 2 K x8 /4 K x8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.


    OCR Scan     		PDF 36C16 36C32 36C16/36C32 36C32. 36C16. 36C32 MD400027/C 36C32-55 Seeq 24128 36c3240

    36C32

    Abstract: No abstract text available
    Text: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's 36C16/32 are high speed 2K x8/4K x 8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.


    OCR Scan     		PDF 36C16 36C32 36C16/32 36C32 MD400027/C

    Untitled

    Abstract: No abstract text available
    Text: SEEtì T E C H N O L O G Y 4SE D INC • 011=1233 0 0 0 3 1 7 S 3 ■ SEE 36C32 High Speed CMOS Electrically Erasable PROM August 1991 Features Description ■ Military Extended and Commercial Temperature Range • -55 °C to +125°C Operation Military • -40°C to +85°C Operation (Extended)


    OCR Scan     		PDF 36C32 36C32is MD400114/- 36C32 T-46-13-27

    E38C32

    Abstract: No abstract text available
    Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry


    OCR Scan     		PDF E/M38C16 E/M38C32 3SC16 38C32 28C64 MD400030/C E38C32

    2816A

    Abstract: No abstract text available
    Text: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout


    OCR Scan     		PDF 38C16 38C32 s38C16/32are 36C32 MD400029/C 2816A

    raytheon

    Abstract: AM27S291ADC MB7138H-SK 27C291-50 SIGNETICS prom 63S1681N 57C29-1 57C291-55 63S1681ANS HARRIS PROM
    Text: SEEQ TECHNOLOGY PROM REPLACEMENT CHART Alternate Manufacturer Part # Description SEEQ Part # AMD AM27PS291DC 2K X 8 PROM AMD AM27PS291DM 2K X 8 PROM 36C16-55 AMD AM27PS291ADM 2K X 8 PROM 36C16-55 36C16-35 36C16-45 AMD AM27S291ADC 2K X 8 PROM CYPRESS CY7C291-35


    OCR Scan     		PDF AM27PS291DC AM27PS291DM AM27PS291ADM AM27S291ADC CY7C291-35 CY7C291-50 MB7138Y-SKZ MB7138H-SKZ MB7138E-WZ 63S1681NS raytheon MB7138H-SK 27C291-50 SIGNETICS prom 63S1681N 57C29-1 57C291-55 63S1681ANS HARRIS PROM

    Untitled

    Abstract: No abstract text available
    Text: E/M36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's E/M36C16/32 are high speed 2K x 8/4K x 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.


    OCR Scan     		PDF E/M36C16 EM36C32 E/M36C16/32 36C16/32 3GC16/32 MD400028/C

    co12f

    Abstract: No abstract text available
    Text: ITE D SEE 3 TECHN OLO GY INC • ñinS33 0Q02bûb 1 E/M36C16 E/36C32 High Speed CMOS Electrically Erasable PROM October 1989 ”T 4 4 - l V 2 - 7 Features Description ■ M ilitary and Extended Temperature Range • -55° C to +125aC Operation (Military


    OCR Scan     		PDF inS33 0Q02b E/M36C16 E/M36C32 125aC E/M36C16/32 38C16-2K* 36C32-4KX8EEPROM MD400028/C co12f

    d774

    Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
    Text: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT


    OCR Scan     		PDF 27C5I2A 27C0I0 27C020 27C040 98C64 28I6A 27C64 27HC64 27HC64I 27HC642 d774 d778 b778 58C65 08CB 58c256 df4a SIGNETICS 87C256 57C49B

    Untitled

    Abstract: No abstract text available
    Text: E/M36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Description Features • SEEO's E/M36C16/32 are high speed 2Kx 8/4Kx 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.


    OCR Scan     		PDF E/M36C16 EM36C32 E/M36C16/32 36C16/32 MD400028/C

    J990

    Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
    Text: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology


    OCR Scan     		PDF E/M38C16 E/M38C32 38C16 38C32 28C64 E/M38C5 MD400030/C J990 E38C32 36C32 eeprom 2816A seeq 2816A

    2BC64

    Abstract: 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom 38C16
    Text: High Speed CMOS Electrically Erasable PROM O ctober 1989 Features • High Speed: • 3 5 n s M axim um A ccess Time P ow er Up/Down P rotection C ircuitry ■ C M O S Technology ■ L o w P ower: • 350 m W JE D E C A pp ro ved B yte Wide P inout • 38C 1 6:2 816 A Pin Com patible


    OCR Scan     		PDF 38C16 38C32 38C16 36C16 38C32 MD400029/C 2BC64 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom