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    36DBM Price and Stock

    Bimba Manufacturing Company LT-0436-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 36 in; Double Acting | Bimba LT-0436-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-0436-DBM Bulk 5 Weeks 1
    • 1 $172.11
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    • 100 $172.11
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    Bimba Manufacturing Company LT-5036-DBM

    Thruster, Linear Thruster Cylinder ; 2-1/2in Bore ; Stroke: 36 in; Double Actin | Bimba LT-5036-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-5036-DBM Bulk 5 Weeks 1
    • 1 $373.25
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    Bimba Manufacturing Company LT-3136-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 36 in; Double Acting ; | Bimba LT-3136-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3136-DBM Bulk 5 Weeks 1
    • 1 $323.35
    • 10 $323.35
    • 100 $323.35
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    Bimba Manufacturing Company LT-7036-DBMT1

    Thruster, Linear Thruster Cylinder ; 3in Bore ; Stroke: 36 in; Double Acting ; | Bimba LT-7036-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-7036-DBMT1 Bulk 5 Weeks 1
    • 1 $492.5
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    Bimba Manufacturing Company LT-3136-DBMT1

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 36 in; Double Acting ; | Bimba LT-3136-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3136-DBMT1 Bulk 5 Weeks 1
    • 1 $328.49
    • 10 $328.49
    • 100 $328.49
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    36DBM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical


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    TGA1171-EPU 38GHz 36dBm 40GHz TGA1171 500mA, TGA1171-EPU 0007-inch PDF

    Rogers-4003

    Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
    Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


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    EB1050SOT89-AG FPD1050SOT89 25dBm 36dBm 12dBm FPD1050SOT89; 1050m 30mil LL1608 Rogers-4003 CAPACITOR 33PF rogers 4003 26GHz LNA PDF

    FLL21E004ME

    Abstract: No abstract text available
    Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


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    FLL21E004ME 36dBm 17GHz 2200MHz FLL21E004ME PDF

    JESD51-7

    Abstract: MABAES0029 MAX2029 MAX2031 MAX2031ETP MAX2039 MAX2041 911MHz
    Text: 19-0248; Rev 1; 6/09 KIT ATION EVALU E L B AVAILA High-Linearity, 650MHz to 1000MHz Upconversion/ Downconversion Mixer with LO Buffer/Switch Features The MAX2031 high-linearity passive upconverter or downconverter mixer is designed to provide +36dBm IIP3, 7dB NF, and 7dB conversion loss for a 650MHz to


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    650MHz 1000MHz MAX2031 36dBm 1250MHz MAX2029. JESD51-7 MABAES0029 MAX2029 MAX2031ETP MAX2039 MAX2041 911MHz PDF

    Fmm5046vf

    Abstract: 0503 10MHZ J250100
    Text: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the


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    FMM5046VF 36dBm FMM5046VF FCSI0200M200 0503 10MHZ J250100 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT233 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 20dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.5GHz


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    RT233 50MHz 33dBm 36dBm 900MHz IMT-2000 WP-22 RT233 IMT-2000, PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50 SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C


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    36dBm CLPFL-0900 10-Jan-11 PDF

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    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation • SAW Band Pass Filter • 50 SMA Connectors • Test Equipment • Lab Use • +36dBm 4 Watts • Operating Temperature: -40°C to 85°C • Storage Temperature: -40°C to 85°C Crystek’s new line of SAW Band Pass Filters are designed in a rugged SMA


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    36dBm CBPFS-0881 18-Aug-11 PDF

    AM343635SF-2H

    Abstract: No abstract text available
    Text: The RF Power House 3.4 - 3.6 GHz 3 Watt Power Amplifier AM343635SF-2H DESCRIPTION AMCOM’s AM343635SF-2H is a 2-stage power amplifier in aluminum housing with input and output SMA connectors. It has 18dB gain, 36dBm output power over the 3.4 to 3.6 GHz Band.


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    AM343635SF-2H AM343635SF-2H 36dBm 36dBm AM343635SF- PDF

    Untitled

    Abstract: No abstract text available
    Text: AM244236WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM244236WM-BM-R is part of the GaAs MMIC power amplifier series. It has 31dB gain, 36dBm output power over the 2.4 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.


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    AM244236WM-BM-R AM244236WM-BM-R 36dBm 50-ohm 1500mA, 10mils 125mA, 275mA 1100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C


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    36dBm CHPFL-1000 04-Nov-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C


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    36dBm CHPFL-0300 04-Nov-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICROWAVE A Division of Crystek Corporation th Schematic In/Out • 7th Order Butterworth Response • 50Ω SMA Connectors In/Out 1.504 38.20 0.807 (20.54) • Test Equipment • Lab Use 0.435 (11.05) SMA Male SMA Female • +36dBm (4 Watts) • Operating Temperature: -40°C to 85°C


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    36dBm CLPFL-0600 09-Jun-10 PDF

    MP036S

    Abstract: MT8841 MT8841AE MT8841AN MT8841AS
    Text: CMOS MT8841 Calling Number Identification Circuit  Features • • • • • • • • • • ISSUE 4 1200 baud BELL 202 and CCITT V.23 Frequency Shift Keying FSK demodulation Compatible with Bellcore TR-NWT-000030 and SR-TSV-002476 High input sensitivity: -36dBm


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    MT8841 TR-NWT-000030 SR-TSV-002476 -36dBm General-11 MP036S MT8841 MT8841AE MT8841AN MT8841AS PDF

    FPD1050SOT89

    Abstract: 20 ohm
    Text: EB1050SOT89BA FPD1050SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 24.5dBm Output Power 17.5dB Gain 0.65dB Noise Figure 36dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


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    EB1050SOT89BA FPD1050SOT89 85GHz 85GHz 36dBm 10dBm 85GHz. FPD1050SOT89; 1050m 30mil 20 ohm PDF

    RF2173SR

    Abstract: No abstract text available
    Text: RF2173 3V GSM POWER AMPLIFIER Package Style: QFN, 16-Pin, 4x4 „ „ „ „ „ VCC2 NC 2F0 GND2 2 12 RF OUT RF IN 3 11 RF OUT GND1 4 10 RF OUT Applications „ 13 5 6 7 8 9 GND „ 14 VCC „ 15 APC2 „ 16 APC1 „ Single 2.7V to 4.8V Supply Voltage +36dBm Output Power at


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    RF2173 16-Pin, 36dBm 800MHz 950MHz 2002/95/EC DS130620 RF2173SR PDF

    EIA1616-4P

    Abstract: No abstract text available
    Text: Excelics EIA1616-4P PRELIMINARY DATA SHEET 16.2-16.4GHz, 4W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN


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    EIA1616-4P 36dBm 1760ATINGS 3120mA 360mA 35dBm 175oC 150oC -65/175oC EIA1616-4P PDF

    AM08011036UM-3H

    Abstract: No abstract text available
    Text: AM08011036UM-3H Power Amplifier Module 8.0 – 11.0GHz, 28dB, 4W February 2014 Rev1 DESCRIPTION AMCOM’s AM08011036UM-3H is a broadband GaAs MMIC power amplifier. It has 28dB small signal gain, and 36dBm 4W saturated output power over the 8.5 to 10.5GHz band.


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    AM08011036UM-3H AM08011036UM-3H 36dBm 11GHz 36dBm 300mA. PDF

    Untitled

    Abstract: No abstract text available
    Text: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm


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    28dbm DVA6735 38dbn^ 36dbm DVA6736 42dbm DVA6737 DVA6738 D5244thru D5259 PDF

    Untitled

    Abstract: No abstract text available
    Text: F, , FLM6472-4C J Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 6.4 ~7.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


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    FLM6472-4C 36dBm FLM6472-4C PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


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    FLM7785-4C 36dBm FLM7785-4C FLM7177-18DA PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7785-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G -j^B = 7.0dB (Typ.) High PAE: r iadd = 30% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package


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    FLM7785-4C 36dBm FLM7785-4C FLM7177-18DA PDF

    Untitled

    Abstract: No abstract text available
    Text: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-4E 36dBm -45dBc 25dBm 4450-4E PDF

    FUJITSU MICROWAVE

    Abstract: FLM4450-4E
    Text: F, , FLM4450-4E J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: r!add = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-4E 36dBm -45dBc 25dBm FLM4450-4E FUJITSU MICROWAVE PDF