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    38 SOT 23 Search Results

    38 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    38 SOT 23 Price and Stock

    TT Electronics plc SOT-DIV23LF-03-8870-1001-BB

    Resistor Networks & Arrays 887/1Kohm 0.1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-03-8870-1001-BB 4,900
    • 1 $2.13
    • 10 $1.89
    • 100 $1.44
    • 1000 $0.896
    • 10000 $0.869
    		Buy Now

    Linear Integrated Systems 2N4338-SOT-23

    High Input Impedance, Low Noise N-CH JFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC 2N4338-SOT-23 1
    • 1 $5.63
    • 10 $5.63
    • 100 $5.63
    • 1000 $5.63
    • 10000 $5.63
    		Buy Now

    38 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. 2 1 3 SOT-23 1: EMITTER 2: BASE


    Original     		BC817 BC817 OT-23 QW-R206-025 PDF

    BC817

    Abstract: BC817-25 BC817-40
    Text: UTC BC817 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. 2 1 3 SOT-23 1: EMITTER 2: BASE


    Original     		BC817 BC817 OT-23 500mA, 500mA QW-R206-025 BC817-25 BC817-40 PDF

    BC817-25

    Abstract: BC817-40
    Text: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*


    Original     		BC817-25 BC817-40 BC817-25 OT-23 BC817-40 PDF

    WC SOT23-3

    Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
    Text: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*


    Original     		BC817-25 BC817-40 OT-23 BC81725MTF WC SOT23-3 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 Mark: 6B. / 6C. B NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*


    Original     		BC817-25 BC817-40 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.


    Original     		BC818-25 BC818-40 OT-23 BC817 PDF

    BC818

    Abstract: No abstract text available
    Text: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.


    Original     		BC818-25 BC818-40 OT-23 BC817 BC818 PDF

    SOT-23 MARKING U1

    Abstract: BCX19 MARKING U1
    Text: BCX19 BCX19 NPN Medium Power Transistor 3 • This device is designed for general purpose amplifiers. • Sourced from process 38. 2 SOT-23 Marking: U1 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage


    Original     		BCX19 OT-23 SOT-23 MARKING U1 BCX19 MARKING U1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT


    Original     		SGA9289Z OT-89 SGA9289Z DS140313 SGA9289ZSQ SGA9289ZSR PDF

    BCX19

    Abstract: mark u1
    Text: BCX19 BCX19 NPN Medium Power Transistor 3 • This device is designed for general purpose amplifiers. • Sourced from process 38. 2 1 SOT-23 Mark: U1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage


    Original     		BCX19 OT-23 BCX19 mark u1 PDF

    sot23 mark code e2

    Abstract: mark PD sot-23 BC817 BC818-25 BC818-40 FAIRCHILD SOT-23 MARK 30
    Text: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.


    Original     		BC818-25 BC818-40 BC818-25 OT-23 BC817 sot23 mark code e2 mark PD sot-23 BC818-40 FAIRCHILD SOT-23 MARK 30 PDF

    BC818-25

    Abstract: BC818-40 BC817 Fairchild Semiconductor - Process
    Text: BC818-25 / BC818-40 BC818-25 BC818-40 C E SOT-23 B Mark: 6F. / 6G. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. See BC817 for characteristics.


    Original     		BC818-25 BC818-40 BC818-25 OT-23 BC817 BC818-40 Fairchild Semiconductor - Process PDF

    BC817-25

    Abstract: BC817-40 bc817 mark
    Text: BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BC817-25 BC817-40 OT-23 BC817-25 BC817-40 bc817 mark PDF

    BC817-25

    Abstract: BC817-40
    Text: BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		BC817-25 BC817-40 OT-23 BC817-25 BC817-40 PDF

    FA38SA50LCP

    Abstract: No abstract text available
    Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		FA38SA50LCP OT-227 2002/95/EC OT-227 11-Mar-11 FA38SA50LCP PDF

    KGF1284

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with


    Original     		E2Q0027-38-72 KGF1284 KGF1284, OT-89 KGF1284 PDF

    KGF1313

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0029-38-72 ¡ electronic components KGF1313 ¡ electronic components KGF1313 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with


    Original     		E2Q0029-38-72 KGF1313 KGF1313, OT-89 KGF1313 PDF

    Untitled

    Abstract: No abstract text available
    Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		FA38SA50LCP OT-227 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    KGF1323C

    Abstract: DCS1800 KGF1323
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0031-38-72 ¡ electronic components KGF1323C ¡ electronic components KGF1323C Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323C, housed in a SOT-89 type plastic-mold package, is a KGF1323 based discrete


    Original     		E2Q0031-38-72 KGF1323C KGF1323C, OT-89 KGF1323 KGF1323C DCS1800 PDF

    "SOT-227" dimensions

    Abstract: No abstract text available
    Text: FA38SA50LCP Vishay Semiconductors Power MOSFET, 38 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated SOT-227 • Simple drive requirements • Low drain to case capacitance


    Original     		FA38SA50LCP OT-227 2002/95/EC OT-227 11-Mar-11 "SOT-227" dimensions PDF

    KGF1323F

    Abstract: MARKING TACS SOT GaAs FET sot89
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0032-38-72 ¡ electronic components KGF1323F ¡ electronic components KGF1323F Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323F, housed in a SOT-89 type plastic-mold package, is a KGF1323-based discrete


    Original     		E2Q0032-38-72 KGF1323F KGF1323F, OT-89 KGF1323-based KGF1323F MARKING TACS SOT GaAs FET sot89 PDF

    transistor R2A

    Abstract: a38 TRANSISTOR
    Text: PNP small signal transistor Die no. A-38 These epitaxial planar PNP silicon transistors are gold doped. Dimensions Units : mm Features • available in the following packages: — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59), see page 300 • collector-to-emitter breakdown


    OCR Scan     		OT-23) SC-59) transistor R2A a38 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1633_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    OCR Scan     		E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633 PDF

    KGF1633

    Abstract: zo 607
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 OKI electronic components_ KGF1 6 3 3 _ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


    OCR Scan     		E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633 zo 607 PDF