SMC1602
Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Text: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3
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CS8406
RA300
RA302
1/16W
SMC1602
SN7002DW
c3231
Q2576
r2561
C3239
C3303
C2651
C5060
U4900
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IRF5505
Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT
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TEST10
TEST11
CS8406
RA300
RA302
1/16W
IRF5505
C3427
SN7002DW
LD1807
343S0284
apple AirPort Extreme
h11m
r3361
HC17051
1n914 onsemi
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Q62702-F1304
Abstract: Q62702-F1305 39 marking in sot223 package
Text: PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 36, BFN 38 NPN ● Type Marking
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Q62702-F1304
Q62702-F1305
OT-223
Q62702-F1304
Q62702-F1305
39 marking in sot223 package
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BCP54
Abstract: BCP55 CBVK741B019 F63TNR F852 PN2222A
Text: BCP55 BCP55 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics. Absolute Maximum Ratings*
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BCP55
OT-223
BCP54
BCP55
CBVK741B019
F63TNR
F852
PN2222A
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Q62702-F1246
Abstract: Q62702-F1303
Text: NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 37, BFN 39 PNP ● Type Marking
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Q62702-F1246
Q62702-F1303
OT-223
Q62702-F1246
Q62702-F1303
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BCP55
Abstract: No abstract text available
Text: BCP55 BCP55 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics. Absolute Maximum Ratings*
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BCP55
OT-223
BCP54
BCP55
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BCP52-16
Abstract: BFN38 BFN39 E6327 VPS05163
Text: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary type: BFN39 PNP 2 1 Type Marking BFN38 BFN 38
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BFN38
BFN39
VPS05163
OT223
BCP52-16
BFN38
BFN39
E6327
VPS05163
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BCP54
Abstract: No abstract text available
Text: N BCP54 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP54
OT-223
based50
BCP54
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Untitled
Abstract: No abstract text available
Text: TN6715A / NZT6715 TN6715A NZT6715 C C B TO-226 B SOT-223 E C E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*
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TN6715A
NZT6715
TN6715A
O-226
OT-223
O-226
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Untitled
Abstract: No abstract text available
Text: TN6715A / NZT6715 NZT6715 TN6715A C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*
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TN6715A
NZT6715
TN6715A
O-226
OT-223
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BCP54
Abstract: No abstract text available
Text: BCP54 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP54
OT-223
BCP54
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Untitled
Abstract: No abstract text available
Text: BCP54 BCP54 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP54
OT-223
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NZT6715
Abstract: PN2222N TN6715A CBVK741B019 F63TNR Polycarbonate transistor A1 HB
Text: TN6715A / NZT6715 TN6715A NZT6715 C E C C B TO-226 B SOT-223 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*
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TN6715A
NZT6715
TN6715A
O-226
OT-223
NZT6715
PN2222N
CBVK741B019
F63TNR
Polycarbonate
transistor A1 HB
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On semiconductor date Code sot-223
Abstract: w2 bcp54 BCP54 CBVK741B019 F63TNR F852 PN2222A AA SOT223
Text: BCP54 BCP54 C E C B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCP54
OT-223
On semiconductor date Code sot-223
w2 bcp54
BCP54
CBVK741B019
F63TNR
F852
PN2222A
AA SOT223
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VPS05163
Abstract: 38 sot223
Text: BFN 36, BFN 38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary types: BFN 37, BFN 39 PNP 2 1 Pin Configuration
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VPS05163
OT-223
EHP00245
EHP00638
Oct-27-1999
100MHz
EHP00639
EHP00637
VPS05163
38 sot223
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39 MARKING SOT223
Abstract: 39 marking in sot223 package VPS05163
Text: BFN 37, BFN 39 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary types: BFN 36, BFN 38 NPN 2 1 Pin Configuration
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VPS05163
OT-223
EHP00254
EHP00644
Oct-27-1999
EHP00642
EHP00643
39 MARKING SOT223
39 marking in sot223 package
VPS05163
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
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BCP54
Abstract: No abstract text available
Text: BCP54 D iscrete POWER & Signal Technologies A É ^Ê National Semiconductor‘ BCP54 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38.
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BCP54
OT-223
BCP54
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type
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Q62702-F1246
Q62702-F1303
OT-223
E35LDS
A535bDS
fl235b05
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39 marking
Abstract: bm 1117
Text: SIEMENS PNP Silicon High-Voltage Transistors BFN 37 BFN 39 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 36, BFN 38 NPN Type
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Q62702-F1304
Q62702-F1305
OT-223
39 marking
bm 1117
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N3C SOT
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type
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Q62702-F1246
Q62702-F1303
OT-223
BFN36
N3C SOT
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistors BFN 37 BFN 39 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 36, BFN 38 NPN Type
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Q62702-F1304
Q62702-F1305
OT-223
EHP0064I
EHF00643
fi235fcjG5
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marking code 8fn
Abstract: No abstract text available
Text: PNP Silicon High-Voltage Transistors BFN 37; BFN 39 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Complementary types: BFN 36/38 NPN Type Marking O rdering code (12-m m tape)
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Q62702-
F1304
F1305
OT-223
OT-223
marking code 8fn
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