855PB
Abstract: el 380 ericsson bsc pbl 380 1UEN
Text: PBL 380 85 July 1999 PBL 380 85 Integrated circuit for transformerless driving of battery powered EL electroluminicent lamps Description. Key features. PBL 380 85 is a monolithic integrated circuit for supplying power to an EL (electroluminicent) lamp. This is intended to replace the LCD background illumination
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1522-PBL
S-164
85/1MSOT
855PB
el 380
ericsson bsc
pbl 380
1UEN
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BSC ERICSSON
Abstract: 855PB ericsson bsc
Text: Preliminary PBL 380 85 July 1999 PBL 380 85 Integrated circuit for transformerless driving of battery powered EL electroluminicent lamps Description. Key features. PBL 380 85 is a monolithic integrated circuit for supplying power to an EL (electroluminicent) lamp. This is intended to replace the LCD background illumination
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1522-PBL
S-164
85/1MSOT
BSC ERICSSON
855PB
ericsson bsc
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B-228
Abstract: 94S-380-D228 transistor b228 2SB1561 2SD2391
Text: Transistors 2SB1561 2SD2391 94S-191-B228 (94S-380-D228) 294
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2SB1561
2SD2391
94S-191-B228)
94S-380-D228)
B-228
94S-380-D228
transistor b228
2SB1561
2SD2391
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BD376
Abstract: bd379
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively PNP Epitaxial Silicon Transistor TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD376/378/380
BD375,
BD377
BD379
BD376
BD378
BD380
O-126
BD376
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BD380
Abstract: BD375 BD376 BD377 BD378 BD379
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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BD376/378/380
BD375,
BD377
BD379
O-126
BD376
BD378
BD380
BD380
BD375
BD376
BD378
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AA104VB05
Abstract: DATA VISION LCD MODULE 320 240 ENH104V2-380/450/600
Text: ENH104V2-380/450/600 Panelview Enhancing the Vision ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION ITEM Panelview provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin Film Transistor Liquid Crystal Display module. The first
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ENH104V2-380/450/600
ENH104V2-380/450/600
AA104VB05
IM/110
DATA VISION LCD MODULE 320 240
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BD376
Abstract: TO-126 fairchild BD375 BD37810STU
Text: BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications • Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted
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Original
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BD376/378/380
BD375,
BD377
BD379
BD376
BD378
BD380
O-126
BD376
TO-126 fairchild
BD375
BD37810STU
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PDF
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AA104VB05
Abstract: DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 64-gray-bar-pattern
Text: White Electronic Designs Display Systems Division ENH104V2-380/450/600 ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION Panelview provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin
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ENH104V2-380/450/600
ENH104V2-380/450/600
AA104VB05
IM/110
DF9B-31P-1V
DF9B-31S-1V
ENH104V2-380
ENH104V2-450
ENH104V2-600
64-gray-bar-pattern
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PDF
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AA104VB05
Abstract: block diagram of black and white t.v LCD-7000 touch screen Lamination DF9B-31P-1V DF9B-31S-1V ENH104V2-380 ENH104V2-450 ENH104V2-600 SM02
Text: ENH104V2-380/450/600 White Electronic Designs Display Systems Division ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS GENERAL DESCRIPTION WEDC provides optically enhanced solutions to the standard Optrex AA104VB05 color TFT-LCD Thin Film
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Original
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ENH104V2-380/450/600
ENH104V2-380/450/600
AA104VB05
IM/110
block diagram of black and white t.v
LCD-7000
touch screen Lamination
DF9B-31P-1V
DF9B-31S-1V
ENH104V2-380
ENH104V2-450
ENH104V2-600
SM02
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PTB 20200
Abstract: No abstract text available
Text: e PTB 20200 30 Watts, 380–500 MHz RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380–500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
PTB 20200
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Untitled
Abstract: No abstract text available
Text: e PTB 20204 1.0 Watt, 380–500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP
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1-877-GOLDMOS
1301-PTB
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buz 380 transistor
Abstract: transistor buz 380 C67078-A3205-A2
Text: BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 380 1000 V 5.5 A 2Ω TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS
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O-218
C67078-A3205-A2
buz 380 transistor
transistor buz 380
C67078-A3205-A2
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RA55H3847M
Abstract: Pout-120
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to
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RA55H3847M
380-470MHz
RA55H3847M
55-watt
470-MHz
Pout-120
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MRF229
Abstract: 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A MRF340 transistor MRF317
Text: ÌF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE ; 44B-05 (.380" Stud) CASE 145A-09 (.380" Stud) CASE 211-07 CASE 211 -09 (.380" Flange) CASE 79-03 (TO-205 Type I CASE 221A-02 (TO-220AB) For VIHF Applications 30-20CI MHz VHF AM/FM Transistors
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O-205AD
O-205
44B-05
45A-09
21A-02
O-220AB)
30-20CI
28-vo
MRF314/15/16/17
MRF340
MRF229
5A09
2N3553 motorola
Transistor 2N3866
MRF317
motorola mrf
MRF high power transistor
MRF314A
transistor MRF317
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MC706
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistor BUZ 380 • N channel • Enhancement mode • FREDFET Type V'ds h ^DS on Package 1> Ordering Code BUZ 380 1000 V 5.5 A 2.0 n TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 30 "C
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O-218
C67078-A3205-A2
MC706
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PDF
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MRF485
Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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MRF476
T0-220AB
MRF453
MRF455/A
MRF454
MRF475
MRF449
MRF450/A
MRF497
O-220AB
MRF485
mrf477
Motorola transistors MRF476
Motorola transistors MRF475
Motorola transistors MRF455
MRF466
MRF455
MRF460
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MRF485
Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de signed for operation in RF Power Amplifiers. These transistors
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OCR Scan
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Distorti1-11
MRF421
MRF475
O-22GAB
MRF412
IMRF410
MRF485
MRF401
45A-09
MRF426
MRF477
Motorola transistors MRF475
Motorola transistors MRF485
MRF466
MRF476
Motorola transistors MRF477
UHF-800
mrf464
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Untitled
Abstract: No abstract text available
Text: ERICSSON 0 PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor Description The 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP
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PDF
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PTB 20200
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP
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power amplifier IC 4440
Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min
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TQ-60
T0-60
BSX33
2N956
power amplifier IC 4440
BFR99
t 3866 transistor
BFR99A
CE-28
bf 225
vhf/SRF 3733
t 3866 power transistor
tic 1060
BFR38
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PDF
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3733
Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090
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TQ-60
T0-60
15BAL
28/2x100
450SQ4LFL
3733
imo 3
sd1090
2n5635
4l stud
SD 1470
TQ-60
2N5016
2N5090
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PDF
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TIC 122 Transistor
Abstract: transistor R1A
Text: ERICSSON ^ PTB 20204 1.0 Watt, 380-500 MHz RF Power Transistor D escription The E 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, it may be used for both CW and PEP
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PDF
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w34 transistor
Abstract: No abstract text available
Text: EO PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS 205 5.21 185 (4.70) REFERENCE SURFACE REFERENCE SURFACE COLLECTOR .100 (2.54) NOM .025 (.640) .015 (.380) SQ NOM 2P LC S .025 (.640) .015 (.380) SQ NOM ' 2P LC S INFRARED LED PHOTOTRANSISTOR
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QPD1223
ST2169
w34 transistor
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PDF
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2n6080
Abstract: SD 1062 transistor 2N3924 sd 3632
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
T0-60
SD 1062 transistor
2N3924
sd 3632
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