Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    382 SOT23 Search Results

    382 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    382 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Tektronix 2712

    Abstract: 0805C104KAT2A
    Text: Application Note 1817 November 2012 13.56 MHz, Class-D Half Bridge, RF Generator with DRF1400 Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com INTRODUCTION The DRF1400 is a MOSFET Half Bridge HB Hybrid Device which has been optimized for efficiency and reduced


    Original
    DRF1400 DRF1400 LMR400 DRF1300 Tektronix 2712 0805C104KAT2A PDF

    circuit diagram of 13.56MHz RF Generator

    Abstract: schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz DRF1200 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz
    Text: Application Note 1811 December 2008 13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E Reference design is available to expedite the evaluation of the DRF1200 Driver MOSFET


    Original
    DRF1200 DRF1200/Class-E an6-13131-1-ND DRF1200 140-XRL16V10-RC GRM21BR71H474KA88L 140-XRL35V10-RC circuit diagram of 13.56MHz RF Generator schematic rf Power supply 500w PRF-1150 schematic rf Power supply 500w 13.56MHz 1kw mosfet GRM21BR71H474KA88L 13.56MHZ mosfet zener diode c24 5t RF inductor 13.56 MHz PDF

    27.12Mhz

    Abstract: PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations
    Text: Application Note 1813 September 2010 27.12 MHz, CLASS-E, 600W RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid Gui Choi Sr. Application Engineer Phone: 541-382-8028, ext. 1205 gchoi@microsemi.com The DRF1200/Class-E 27M Reference design is available to expedite the evaluation of the DRF1200 Driver


    Original
    DRF1200 DRF1200/Class-E ERJ-ENF1001V ERJ-6ENF51R1V 269W-1 ERJ-6ENF5110V BZX84C5V1-7-F 27.12Mhz PRF-1150 oscillator 27.12mhz circuit diagram of 13.56MHz RF Generator 600w schematic diagram switching power supply zener diode c24 5t 5.1V DIODE ZENER Zener LED ramp generator 555 rf toroid design considerations PDF

    Philips MARKING CODE

    Abstract: Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23


    Original
    M3D088 PSSI3120CA MGC421 613514/01/pp8 Philips MARKING CODE Philips Logic Marking Code marking code 10 sot23 BP317 PSSI3120CA PDF

    ST 9340

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23


    Original
    M3D088 PSSI3120CA PSSI3120CA MGC421 di20CA 13-Feb-03) ST 9340 PDF

    PD-1503

    Abstract: pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704
    Text: SSOP SSOP H20 H24 TSSOP L8 L20 A56 L14 L24 L16 L28 Q16 Q24 Q20 Q28 TFBGA NC64 SOIC W8 S24 PDIP W14 P20 S28 V56 A48 QSOP SOIC W16 H28 TSSOP S16 V48 BQSOP K56 B48 K48 B40 SOT23 T5 C6 T6 NA256 PBGA MSOP ZB56 PLCC J44 NA272 LFBGA NB64 NB96 NB114 U8 QFN J32 B80


    Original
    NA256 NA272 NB114 PD-1501 MO-153ED TSSOP-56 PD-1502 MO-153EE SSOP-56 PD-1402 PD-1503 pd1503 h24 sot23-6 MS-026C PBGA272 MO-153-AB PD1002 MO-194AF NA-256 PD1704 PDF

    crt monitor circuit diagram

    Abstract: 2N3906 2SB0709 PMBT3906
    Text: F75385M ±1oC Accuracy Temperature Sensor IC Datasheet Release Date: July, 2006 Revision: V0.21P F75385 F75385 Datasheet Revision History Version Date Page 0.20P March, 2006 - 0.21P July, 2006 10 Revision History Original Release Version Modify VT1/VT2 High Limit and VT1 THERM Limit Default Value.


    Original
    F75385M F75385 F75385 crt monitor circuit diagram 2N3906 2SB0709 PMBT3906 PDF

    MSB003

    Abstract: PBR941B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN • Low noise


    Original
    M3D088 PBR941B 603508/03/pp13 MSB003 PBR941B PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18 Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN DESCRIPTION • Low noise


    Original
    M3D088 PBR941B 603508/03/pp13 PDF

    smd transistor 203

    Abstract: MSD230 SC-75 SC-89 smd transistor 493
    Text: Philips Semiconductors’ family of resistor-equipped transistors offers a cost-effective solution for next-generation consumer products. These small-signal devices integrate up to two bias resistors Resistor-equipped transistors – diffused with the transistor in a single die – to save board space


    Original
    PDF

    induction cooker circuit diagram

    Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
    Text: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3


    Original
    SCE0013D induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLDER PADS OUTLINE inch SOT-23-3L 29 .017 MIN (0.42 MIN .246 MIN. (2.5 MIN.) .055 MIN. (1.40 MIN.) ref. 1.00 .043 REF. (1.1 REF.) .349 MAX. (8.86 MAX.) .528 MAX. (13.4 MAX.) .049 REF. (1.25 REF.) .039 MIN. (1.0 MIN.) .031 MIN. (0.80 MIN.) .202 MAX. (5.13) MAX.


    Original
    OT-23-3L PDF

    IST3032

    Abstract: JCG320160A01-02 MTG-32240 WG160160A IST3026 JCG320160A01-01/Y1 IST3226
    Text: RAiO RA8806 Evalution-Kit User Guide Preliminary Version 1.0 January 19, 2009 RAiO Technology Inc. Copyright RAiO Technology Inc. 2008 RAiO TECHNOLOGY INC. 1/25 www.raio.com.tw RA8806 Preliminary Version 1.0 Chapter Evalution Kit User Guide Contains Page


    Original
    RA8806 RA8806 Delay100ms IST3032 JCG320160A01-02 MTG-32240 WG160160A IST3026 JCG320160A01-01/Y1 IST3226 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP64-06 Silicon PIN diode Product specification Supersedes data of 2000 Mar 22 2001 Feb 27 Philips Semiconductors Product specification Silicon PIN diode BAP64-06 FEATURES PINNING • High voltage, current controlled


    Original
    M3D088 BAP64-06 613512/03/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original
    M3D425 PBSS3540F 613514/01/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS4240T 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage


    Original
    M3D088 PBSS4240T OT89/SOT223 613514/01/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT491A NPN BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification NPN BISS transistor PMMT491A FEATURES PINNING • High current max. 1 A


    Original
    M3D088 PMMT491A PMMT591A. 613514/04/pp8 PDF

    BAW56

    Abstract: 7M marking aw56 lp "sot23 marking motorola"
    Text: 34 MOTOROLA SC -CDIODES/OPTOÏ ì>F|b3b?ESS 0Q3ñSmn 1 63 67 25 5 MO TO R O L A SC DIODES/OPTO 34C 382^6 D T '— SOT23 (continued) DEVICE NO. BAW56 SMALL-SIGNAL DUAL SWITCHING DIODES (COMMON ANODE) TOP VIEW A I I • Common anode dual diode specially designed for general


    OCR Scan
    0P3fl54b BAW56 t---1-10% 7M marking aw56 lp "sot23 marking motorola" PDF

    TO-18 amps pnp transistor

    Abstract: sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06
    Text: Microsemi PNP Transistors Part Number Microsemi Division 2N0329A JAN2N5795 JAN2N5796 JANTX2N5795 JANTX2N5796 JANTXV2N5795 JANTXV2N5796 MMBT3906 MMBT4403 MMBT2907A HS4208 HS3013 2N3250A 2N3251A JAN2N3250A JAN2N3251A JANTX2N3250A JANTX2N3251A JANTXV2N3250 JANTXV2N3251


    OCR Scan
    OT-23 TO-18 amps pnp transistor sot 23 2n2907 pnp transistor 2N0328 HS4208 M95FA-03-STD/M95FAR02A06 PDF

    diode marking 63s SOT23

    Abstract: No abstract text available
    Text: SIEMENS BAT 64 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage Pin Configuration A1/A2 m nr Ordering Code Pin Configuration


    OCR Scan
    Q62702-A879 Q62702-A961 OT-23 Q62702-A962 Q62702-A963 AE35bD5 01203b0 diode marking 63s SOT23 PDF

    A 798 transistor

    Abstract: 382 sot23
    Text: Central Semiconductor Corp. CMPT5179 NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy mold­ ed in a surface mount package, designed for low


    OCR Scan
    CMPT5179 OT-23 200MHz CP317, 26-September OT-23 A 798 transistor 382 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings


    OCR Scan
    Q62702-F979 OT-23 EHT07072 PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan
    BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A PDF

    TEMD2100

    Abstract: 843V
    Text: TE MIC TEMD2100 S e m i c o n d u c t o r s Silicon PIN Photodiode Description TEMD2100 is a high speed silicon PIN photodiode in a miniature SOT-23 package for surface mounting on printed boards. Its flat package provides an extra wide viewing angle. Due to its waterclear epoxy the device is sensitive to


    OCR Scan
    TEMD2100 TEMD2100 OT-23 25mm2 15-Jul-96 843V PDF