Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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PDF
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Untitled
Abstract: No abstract text available
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
FMA3058-000
FMA3058-000SQ
FMA3058-000S3
DS090609
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PDF
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X-band Gan Hemt
Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
19dBm
FMA246-000
FMA246-000SQ
FMA246-000S3
DS090309
X-band Gan Hemt
A246
MIL-HDBK-263
x-band mmic
MIL-STD-1686
X-band GaAs pHEMT MMIC Chip
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PDF
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X-band Gan Hemt
Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Text: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare
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FMA3015
FMA3015
FMA3015-000
FMA3015-000SQ
DS090306
FMA3015-000S3
X-band Gan Hemt
84-1 CONDUCTIVE EPOXY
MIL-HDBK-263
84-1 LMIT
x-Band Hemt Amplifier
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PDF
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FMA3058
Abstract: MIL-HDBK-263 fma-3058 GaN Amplifier 20GHz DS090609
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
20GHz
-12dB
-10dB
FMA3058-000
MIL-HDBK-263
fma-3058
GaN Amplifier 20GHz
DS090609
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PDF
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x-Band Hemt Amplifier
Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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FMA246
FMA246
14GHz.
FMA246-000
FMA246-000SQ
FMA246-000S3
DS110503
x-Band Hemt Amplifier
x-band mmic
X-band GaAs pHEMT MMIC Chip
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PDF
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FPD750
Abstract: MIL-HDBK-263 InP HBT transistor DS090609
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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Original
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FPD750
FPD7500
FPD750
25mx750m
OT343,
12GHz
38dBm
MIL-HDBK-263
InP HBT transistor
DS090609
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PDF
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Untitled
Abstract: No abstract text available
Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V
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Original
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FMA246
FMA246
14GHz.
FMA246-000SQ
FMA246-000
FMA246-000S3
DS110503
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PDF
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