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    3900A Search Results

    3900A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    10143473-900A000LF Amphenol Communications Solutions PwrMAX® Power Connector, Right Angle, Plug STB 9HP with guide Visit Amphenol Communications Solutions
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    3900A Price and Stock

    KOA Speer Electronics Inc RN73R1JTTD3900A10

    RES 390 OHM 0.05% 1/10W 0603
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    DigiKey RN73R1JTTD3900A10 Digi-Reel 2,990 1
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    RN73R1JTTD3900A10 Cut Tape 2,990 1
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    Flip Electronics FDMB3900AN

    MOSFET 2N-CH 25V 7A 8MLP MICRO
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    onsemi FDMB3900AN

    MOSFET 2N-CH 25V 7A 8MLP MICRO
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    TME FDMB3900AN 1
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    Win Source Electronics FDMB3900AN 145,500
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    Vishay Electro-Films BCR3900AFKAHWS

    BCR 1% +/-100PPM WS
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    DigiKey BCR3900AFKAHWS Tray 250
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    KOA Speer Electronics Inc RN73H1JTTD3900A10

    RES 390 OHM 0.05% 1/10W 0603
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    DigiKey RN73H1JTTD3900A10 Cut Tape 1,000
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    3900A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADF4106

    Abstract: No abstract text available
    Text: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


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    PDF KSN-3900A+ DK1042 ADF4106

    Untitled

    Abstract: No abstract text available
    Text: KSN-3900A+ Frequency Synthesizer Typical Performance Data FREQ. POWER OUTPUT HARMONICS VCO CURRENT PLL CURENT dBm (dBc) (mA) (mA) (MHz) 3800.0 3805.0 3815.0 3825.0 3835.0 3845.0 3855.0 3865.0 3875.0 3885.0 3900.0 -45ºC +25ºC +85ºC -45ºC F2 +25ºC 0.57


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    PDF KSN-3900A+ 3900MHz±

    wt 8871

    Abstract: 3826 3900-365 transistor equivalent book FOR K2843
    Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • Linear tuning characteristics • Low pushing • Low pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


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    PDF ZX95-3900A+ GB956 ZX95-3900A-S+ 2002/95/EC) wt 8871 3826 3900-365 transistor equivalent book FOR K2843

    37746

    Abstract: 39587 38931
    Text: Voltage Controlled Oscillator Typical Performance Data ZX95-3900A+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00


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    PDF ZX95-3900A+ 37746 39587 38931

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • Linear Tuning characteristics • Low Pushing • Low Pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


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    PDF ZX95-3900A+ GB956 ZX95-3900A-S+ 2002/95/EC) 10KHz 100KHz

    Dow Corning 735

    Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
    Text: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF LS2037 SF1154 DC550 G322L Dow Corning 735 dow corning silicone compound alcoa electrical joint compound 2600 corning dissipator Silicones dow corning 732 A801CA A801CB

    SF1154

    Abstract: SF-1154 G322L G623 alcoa electrical joint compound 3m scotch-brite DC550 6rt2 ALCOA LS2037
    Text: A801 77mm RECTIFIER DIODE 3200V / 3900A The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF LS2037 SF1154 DC550 G322L SF-1154 G322L G623 alcoa electrical joint compound 3m scotch-brite 6rt2 ALCOA

    3860

    Abstract: No abstract text available
    Text: KSN-3900A+ Frequency Synthesizer Typical Performance Data Power Output Vs Frequency 4.0 -45°C 3.5 +25°C Power Output dBm 3.0 +85°C 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 3800 3810 3820 3830 3840 3850 3860 3870 3880 3890 3900 Frequency (MHz) 2nd Harmonics Vs Frequency


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    PDF KSN-3900A+ 3900MHz 3860

    Untitled

    Abstract: No abstract text available
    Text: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


    Original
    PDF KSN-3900A+ DK1042

    wt 8871

    Abstract: No abstract text available
    Text: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • linear tuning characteristics • low pushing • low pulling • protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


    Original
    PDF ZX95-3900A+ GB956 ZX95-3900A-S+ 2002/95/EC) wt 8871

    Untitled

    Abstract: No abstract text available
    Text: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


    Original
    PDF KSN-3900A+ DK1042 ESN-2150P-12 KSN-3900A

    Untitled

    Abstract: No abstract text available
    Text: Voltage Controlled Oscillator Typical Performance Data ZX95-3900A+ Frequency and Tuning Sensitivity Power Output 4500 FREQ. @ -55°C FREQ. @ +25°C 46 5.2 44 5.0 Output Power dBm Frequency (MHz) T.SENS @ +25°C 4200 42 4100 40 4000 38 3900 36 3800 34 3700


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    PDF ZX95-3900A+

    R1279

    Abstract: No abstract text available
    Text: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1279NC22x to R1279NC25x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 2200-2500 V VDSM Non-repetitive peak off-state voltage, (note 1) 2200-2500


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    PDF R1279NC22x R1279NC25x R1279NC25x R1279

    650Ah

    Abstract: No abstract text available
    Text: Powered by MSJ 650 2V 650Ah MSJ 650 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit


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    PDF 650Ah 10hr-rate 02/Cell 650Ah

    R1331NC10X-12X

    Abstract: thyristor 1012 r1331 CS thyristor cs 5-10
    Text: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1331NC10x to R1331NC12x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1000-1200


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    PDF R1331NC10x R1331NC12x R1331NC12x R1331NC10X-12X thyristor 1012 r1331 CS thyristor cs 5-10

    PLC siemens S7-300 cpu 313C manual

    Abstract: PLC siemens S7-300 cpu 315-2 DP manual 6ES7 315-2AG10-0AB0 6ES7 331-7KF02-0AB0 6ES7 321-1BL00-0AA0 PLC siemens S7-300 cpu 315-2 PN/DP 313-5BE01-0AB0 PLC siemens S7-300 cpu 315-2 DP 6ES7 331-7KB02-0AB0 6ES7 361-3CA01-0AA0
    Text: SIMATIC S7-300 Central processing units CPU 312C to CPU 317F-2 DP • CPU 317F-2 DP • The failsafe CPU with a large program memory and quantity framework for demanding applications • For configuration of a failsaf e automation system for plants with increased safety requirements


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    PDF S7-300 317F-2 ET200S ET200M PLC siemens S7-300 cpu 313C manual PLC siemens S7-300 cpu 315-2 DP manual 6ES7 315-2AG10-0AB0 6ES7 331-7KF02-0AB0 6ES7 321-1BL00-0AA0 PLC siemens S7-300 cpu 315-2 PN/DP 313-5BE01-0AB0 PLC siemens S7-300 cpu 315-2 DP 6ES7 331-7KB02-0AB0 6ES7 361-3CA01-0AA0

    GES5307

    Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
    Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)


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    PDF 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93

    2N3397

    Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397 n3860

    2N2926

    Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN


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    PDF 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3859A

    A190A

    Abstract: No abstract text available
    Text: C O N V ER T ER G R A D E T H Y R IS T O R Voltage Ratings 500 I J CR 140 U and F Series I t A V 8 5 ° C = 1 5 0 A I 1000 L_ J 1500 L_ J _ L I u 2000 UNIT I— I V rsm V l2t = 7 6 ,0 0 0 A 2s e c V dsm V RATIN GS AND C H A R A C T ER IS T IC S V rrm


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    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    7408, 7404, 7486, 7432 use NAND gate

    Abstract: JLCC-68 ci 74386 cI 74150 jLCC68 74153 full adder 7402, 7404, 7408, 7432, 7400 74106 sln 7404 LCC-64
    Text: MB65XXXX MB66XXXX MB67XXXX AV CMOS SERIES GATE ARRAYS F U JIT S U June 1986 Edition 2.0 DESCRIPTION The Fujitsu MB65xxxx/M B66xxxx/M B67xxxx family are a series o f high perform ance CMOS gate arrays designed to provide high density, low pow er, and operating speeds th a t are com parable to standard bipolar logic. The A V M 865xxxx series is an ideal


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    PDF MB65XXXX MB66XXXX MB67XXXX MB65xxxx/MB66xxxx/MB67xxxx M865xxxx) MB67xxxx) MB66xxxx) 350AVB 540AVB 850AVB 7408, 7404, 7486, 7432 use NAND gate JLCC-68 ci 74386 cI 74150 jLCC68 74153 full adder 7402, 7404, 7408, 7432, 7400 74106 sln 7404 LCC-64

    741n

    Abstract: 3900BE 741J bm 308 an 3900AE
    Text: ANALOGUE INTEGRATED REGULATORS, S SWITCH-MODE TDA POWER 4SQ1D OR. CIRCUITS & AMR s SUPPLY COMRARATORS l i ^ L U i S.A. n CONTROLLER Features : 0 . 7.8 11 110 4 . Operating temperature : Supply voltage : Switch voltage V9 : Supply current : Voltage reference VI :


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    PDF O-116 741n 3900BE 741J bm 308 an 3900AE