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    Maxim Integrated Products MAX5395MATA-T

    IC DGTL POT 50KOHM 256TAP 8TDFN
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    DigiKey MAX5395MATA-T Digi-Reel 5,634 1
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    MAX5395MATA-T Cut Tape 5,634 1
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    MAX5395MATA-T Reel 5,000 2,500
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    KEMET Corporation OHD3-95M

    THERMOSTAT 95DEG C SPST-NO MODUL
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    DigiKey OHD3-95M Tray 868 1
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    Mouser Electronics OHD3-95M 48
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    Newark OHD3-95M Bulk 1,000
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    RS OHD3-95M Bulk 61 1
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    Avnet Abacus OHD3-95M 20 Weeks 1,000
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    IBS Electronics OHD3-95M 49 10
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    Lumberg Automation RKW-40-839-5M

    CBL 4POS PLUG RA TO WIRE 16.4'
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    DigiKey RKW-40-839-5M Bulk 6 1
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    Lumberg Automation RSRK-40-839-5M

    CIRC CBL 4POS RCPT TO PLUG 16.4'
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    DigiKey RSRK-40-839-5M Bulk 2 1
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    Lumberg Automation RK-40-839-5M

    CIRC CBL 4POS PLUG TO WIRE 16.4'
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    DigiKey RK-40-839-5M Bulk 1 1
    • 1 $64.29
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    395M Datasheets (2)

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    ECAD Model
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    395MKP275KH Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 3.9UF 10% 310VAC RADIAL Original PDF
    395MKP275KJ Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 3.9UF 10% 310VAC RADIAL Original PDF

    395M Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2253/LTC2252 12-Bit, 125/105Msps Low Power 3V ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 125Msps/105Msps Single 3V Supply 2.85V to 3.4V Low Power: 395mW/320mW 70.2dB SNR 88dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range


    Original     		LTC2253/LTC2252 12-Bit, 125/105Msps 125Msps/105Msps 395mW/320mW 640MHz 125Msps: LTC2253 12-Bit) LTC2255 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS ON = 395m Q2: RDS(ON) = 430m (max) (@VGS = 1.8 V) (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Rating Unit Drain-Source voltage


    Original     		SSM6L10TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V)


    Original     		SSM6K25FE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N25TU TOSHIBA Field Effect Transistor Tentative Silicon N Channel MOS Type U-MOSIII SSM6N25TU Switching Applications Small package (2in1) • Low on resistance: 2.0±0.1 1.7±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) Symbol Rating Unit Drain-Source voltage


    Original     		SSM6N25TU PDF

    SSM6L10TU

    Abstract: No abstract text available
    Text: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Rating Unit Drain-Source voltage


    Original     		SSM6L10TU SSM6L10TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS ON = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V)


    Original     		SSM6K25FE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1 Characteristics Symbol Rating Unit Drain-Source voltage


    Original     		SSM6N25TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 Unit Drain-Source voltage


    Original     		SSM6L10TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type Tentative SSM6L11TU Switching Applications Low on resistance Unit: mm Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V) 2.0±0.1 1.7±0.1 Rating Unit Drain-Source voltage


    Original     		SSM6L11TU -20are PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type Tentative SSM6L10TU Switching Applications Low on resistance Unit: mm Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) 2.0±0.1 1.7±0.1 Rating Unit Drain-Source voltage


    Original     		SSM6L10TU -20are PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6K25FE TOSHIBA Field Effect Transistor Tentative Silicon N Channel MOS Type U-MOSIII SSM6K25FE Switching Applications Unit: mm 1.6±0.05 Small package • Low on resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V) Rating Unit Drain-Source voltage


    Original     		SSM6K25FE PDF

    SSM6L10TU

    Abstract: SSM6L10
    Text: SSM6L10TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V)


    Original     		SSM6L10TU SSM6L10TU SSM6L10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU PDF

    SSM6K25FE

    Abstract: No abstract text available
    Text: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 1.6±0.05 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V)


    Original     		SSM6K25FE SSM6K25FE PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2251/LTC2250 10-Bit, 125/105Msps Low Noise 3V ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 125Msps/105Msps Single 3V Supply 2.85V to 3.4V Low Power: 395mW/320mW 61.6dB SNR 85dB SFDR No Missing Codes Flexible Input: 1VP-P to 2VP-P Range


    Original     		LTC2251/LTC2250 10-Bit, 125/105Msps 125Msps/105Msps 395mW/320mW 640MHz 125Msps: LTC2251 10-Bit) LTC2253 PDF

    SSM6L11TU

    Abstract: MOS 3020
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS ON = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU SSM6L11TU MOS 3020 PDF

    SSM6L11TU

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU SSM6L11TU PDF

    SSM6K25FE

    Abstract: No abstract text available
    Text: SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6K25FE High Speed Switching Applications • Optimum for high-density mounting in small packages 1.6±0.05 • Low on-resistance: 1.2±0.05 Ron = 395mΩ (max) (@VGS = 1.8 V)


    Original     		SSM6K25FE SSM6K25FE PDF

    SSM6N25TU

    Abstract: No abstract text available
    Text: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Optimum for high-density mounting in small packages • Low on-resistance: Unit: mm Ron = 395mΩ (max) (@VGS = 1.8 V) 2.1±0.1 Ron = 190mΩ (max) (@VGS = 2.5 V)


    Original     		SSM6N25TU 39lled SSM6N25TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance Q1: Ron = 395mΩ max (@VGS = 1.8 V) Q2: Ron = 430mΩ (max) (@VGS = -2.5 V)


    Original     		SSM6L11TU PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1


    Original     		SSM6N25TU PDF

    SSM6N25TU

    Abstract: No abstract text available
    Text: SSM6N25TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII SSM6N25TU High Speed Switching Applications Unit: mm Optimum for high-density mounting in small packages • Low on-resistance: 2.1±0.1 Ron = 395mΩ (max) (@VGS = 1.8 V) 1.7±0.1


    Original     		SSM6N25TU SSM6N25TU PDF