MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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XFL3012-393MEC
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Coilcraft Inc
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General Purpose Inductor, 39uH, 20%, 1212, |
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PCH-45X-393KLT
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Coilcraft Inc
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General Purpose Inductor, 39uH, 10%, Ferrite-Core, |
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PCH-27X-393KLT
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Coilcraft Inc
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General Purpose Inductor, 39uH, 10%, Ferrite-Core |
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