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P1D8 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V44S0A 4 .4 —5.0G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power F E T especially designed fo r use in 4 .4 ~ 5.0 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	39V44S0A P1D8	PDF

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P1D8

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V44S0A 4 .4 —5.0G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power F E T especially designed fo r use in 4 .4 ~ 5.0 GHz band amplifiers. The herm etically sealed metal-ceramic

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39V44S0A P1D8

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