C30817
Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30fc
001Q5
C30817
Range--40Â
C30817
ED-0030/10/88
RCA C30817
LXA 102 103
PTS 400
C3081
QQG0107
921S-4
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C30916E
Abstract: rca 036 spot photodetector
Text: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —
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3030blD
C30916E
C30916E
ULS-S223R1
rca 036
spot photodetector
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm
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3030blD
0DDD135
C30916E
HI-51
30916E
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