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    3DD13001 Search Results

    3DD13001 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3DD13001 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13001 Liao Wei Transistor for Saving Lamp Original PDF
    3DD13001 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    3DD13001 Unknown TO 92 PLASTIC ENCAPSULATE TRANSISTORS Scan PDF
    3DD13001A1 China Hua Jing Electronics Group NPN Transistor TO-92 Original PDF
    3DD13001-TO-251 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF
    3DD13001-TO-92 Jiangsu Changjiang Electronics Technology TRANSISTOR NPN Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    PDF O-251-3L 3DD13001 O-251-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original
    PDF 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter


    Original
    PDF 3DD13001

    3DD13001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


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    PDF O-251 3DD13001 O-251 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range


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    PDF 3DD13001

    IB-20mA

    Abstract: hfe1 3DD13001 3DD13001A1
    Text: 华晶分立器件 3DD13001 A1 低频放大环境额定双极型晶体管 1 概述与特点 1.5 3DD13001 A1 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及手机充电器的 功率开关电路 其特点如下 击穿电压高 反向漏电流小


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    PDF 3DD13001 45max 100mA 100mA, IB-20mA hfe1 3DD13001A1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value


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    PDF 3DD13001B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value


    Original
    PDF 3DD13001B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF 3DD13001

    131-6 to92

    Abstract: 3DD13001 npn 600v to92 ic MA 2831
    Text: 3DD13001 NPN TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 1.25MAX 3. EMITTER 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units 600 V Collector -Base Voltage VCEO Collector-Emitter Voltage


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    PDF 3DD13001 25MAX 131-6 to92 npn 600v to92 ic MA 2831

    ic MA 2831

    Abstract: 3DD13001 transistor 131-6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    PDF 3DD13001 ic MA 2831 3DD13001 transistor 131-6

    3DD13001

    Abstract: datasheet of ic 555 A1070
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR( NPN ) TO—92 FEATURES Power dissipation PCM : 1.25 W(Tamb=25℃) Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600 V Operating and storage junction temperature range


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    PDF 3DD13001 O--92 270TYP 050TYP 3DD13001 datasheet of ic 555 A1070

    3DD13001

    Abstract: No abstract text available
    Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A


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    PDF 3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001

    ic MA 2831

    Abstract: 3DD13001B 3DD13001 131-6 to92
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR


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    PDF 3DD13001B ic MA 2831 3DD13001B 3DD13001 131-6 to92

    3dd13001 TRANSISTOR

    Abstract: 3DD13001
    Text: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃


    Original
    PDF 3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001

    300TYP

    Abstract: 3DD13001 IC 7900
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR( NPN ) TO—251 FEATURES Power dissipation PCM : 1.2 W(Tamb=25℃) Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600 V Operating and storage junction temperature range


    Original
    PDF O-251 3DD13001 O--251 091TYP 300TYP 300TYP 3DD13001 IC 7900

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR( NPN ) TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1 W(Tamb=25℃) Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600


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    PDF O-126 3DD13001 EB5-30 290TYP 090TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO:


    Original
    PDF 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR NPN TO-92 FEATURE • power switching applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. COLLECTOR Value


    Original
    PDF 3DD13001B

    3DD13001

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original
    PDF O-251 3DD13001 O-251 3DD13001

    transistor 131-6

    Abstract: 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92
    Text: 3DD13001 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


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    PDF 3DD13001 transistor 131-6 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    3DD13001

    Abstract: No abstract text available
    Text: 3DD13001 TRAN SISTO R N PN FEATURES □ m□ P o w e r d is s ip a t io n T O -9 2 P cm: 0.75W (Tamb=25°C) C o lle c to r cu rre n t 1.E M I T T E R Ic 2.C O L L E C T O R m ; 0.2 A C o lle c to r-b a se v o lta g e 3.B A S E V ( b r )c b o : 600 V O p e ra tin g and s t o ra g e ju n c tio n tem perature ra n ge


    OCR Scan
    PDF 3DD13001 100mA

    3DD13001

    Abstract: No abstract text available
    Text: m c c TO -126 P la s tic -E n c a p s u la te T ra n s is to rs ^ 3DD13001 T R A N S IS T O R N P N FEATU R E S I p p é r ^ e tM jà r tlo n Pcm ; . 1W (Tamb=25"C) •eanireiii^ -base voltage V(BR)côo: 600 V &tyfÿniQtig.-sfttf s to ra g e ju n c tio n te m p e ra tu re ra n g e


    OCR Scan
    PDF 3DD13001