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    Untitled

    Abstract: No abstract text available
    Text: 3VD212800YL 3VD212800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD212800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 3 Ø Advanced termination scheme to provide enhanced Ø


    Original     		PDF 3VD212800YL 3VD212800YL O-220

    M6G DATASHEET

    Abstract: 1N80 3VD212800YL
    Text: 3VD212800YL 3VD212800YL Ø MOSFET 3VD212800YL 800V N MOS 3 Ø Ø Ø Ø TO-220 1 1N80 Ø AC-DC DC-DC H Ø 2.12mm*2.02mm Ø 300±20 m Ø Al PMW PAD3:SOURCE PAD1:GATE Ag Tamb=25°C (TO-220 ) VDS 800 V VGS ±30 V ID 1.0 A PD 45 W TJ -55 +150 °C Tstg -55 +150


    Original     		PDF 3VD212800YL O-220 M6G DATASHEET 1N80 3VD212800YL

    1N80

    Abstract: No abstract text available
    Text: 3VD212800YL 3VD212800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD212800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD212800YL 3VD212800YL O-220 2020m 1920m 1N80