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Catalog Datasheet	MFG & Type	Document Tags	PDF
600VMOS Abstract: 4N60 3VD297600YL Text: 3VD297600YL 3VD297600YL 高压MOSFET芯片描述 ¾ 3VD297600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD297600YL 3VD297600YL 3VD297600YLN 600VMOS O-220 600VVGS 10VID 30VVDS 600VMOS 4N60	PDF
4N60 Abstract: 3VD297600YL 4542m Text: 3VD297600YL 3VD297600YL 高压MOSFET芯片描述 Ø 3VD297600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD297600YL 3VD297600YL 3VD297600YLN 600VMOS O-220 3200m 2760m 4N60 4542m	PDF
mosfet 4n60 power supply Abstract: mosfet 4n60 3VD297600YL 4n60 4N60 equivalent Text: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	3VD297600YL 3VD297600YL O-220 3200m 2760m mosfet 4n60 power supply mosfet 4n60 4n60 4N60 equivalent	PDF
4N60 equivalent Abstract: No abstract text available Text: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	3VD297600YL 3VD297600YL O-220 4N60 equivalent	PDF