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    3A 100V NPN LOW SATURATION VOLTAGE Search Results

    3A 100V NPN LOW SATURATION VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    3A 100V NPN LOW SATURATION VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXTN25100DG

    Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
    Text: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor


    Original     		PDF ZXTN25100DG OT223 100mV ZXTP19100CG OT223 D-81541 ZXTN25100DG ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG

    Untitled

    Abstract: No abstract text available
    Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.


    Original     		PDF DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679

    2SB1167

    Abstract: No abstract text available
    Text: Ordering number:2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043A Features [2SB1167/2SD1724] · Low collector-to-emitter saturation voltage.


    Original     		PDF 2SB1167/2SD1724 00V/3A 2SB1167/2SD1724] 2SB1167 O-126LP 2SB1167

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT653 100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •              BVCEO > 100V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A


    Original     		PDF FZT653 OT223 300mV FZT753 AEC-Q101 J-STD-020 DS33150

    DARLINGTON 3A 100V npn

    Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601


    Original     		PDF 2SB601 VCC50V 2SD560 DARLINGTON 3A 100V npn 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor

    2SC2908

    Abstract: 3A 100V npn LOW SATURATION VOLTAGE
    Text: SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1


    Original     		PDF 2SC2908 2SC2908 3A 100V npn LOW SATURATION VOLTAGE

    NPN Transistor 8A

    Abstract: DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A


    Original     		PDF TIP107 TIP102 NPN Transistor 8A DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107

    2SC2908

    Abstract: 3A 100V npn LOW SATURATION VOLTAGE
    Text: Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage APPLICATIONS ・For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC2908 2SC2908 3A 100V npn LOW SATURATION VOLTAGE

    2sc2516

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers


    Original     		PDF 2SC2516 O-220C 2sc2516

    2SC2517

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers


    Original     		PDF 2SC2517 O-220C 2SC2517

    MJE172

    Abstract: MJE182
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE182 DESCRIPTION •Collector–Emitter Sustaining Voltage— : VCEO SUS = 80 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172


    Original     		PDF MJE182 MJE172 MJE172 MJE182

    3A 100V npn LOW SATURATION VOLTAGE

    Abstract: 2SC2517
    Text: Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers


    Original     		PDF 2SC2517 O-220C 3A 100V npn LOW SATURATION VOLTAGE 2SC2517

    2sc2516

    Abstract: 3A 100V npn LOW SATURATION VOLTAGE
    Text: Inchange Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers


    Original     		PDF 2SC2516 O-220C 2sc2516 3A 100V npn LOW SATURATION VOLTAGE

    2SD2241

    Abstract: 2SB1481 rl10c
    Text: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications


    Original     		PDF 2SD2241 O-220F 2SB1481 VCCA30V 2SD2241 2SB1481 rl10c

    2SC3170

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3170 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		PDF 2SC3170 O-220Fa 2SC3170

    2SC2739

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1


    Original     		PDF 2SC2739 O-220C 2SC2739

    2SC2739

    Abstract: 2a 100v NPN ic 3A hfe 500
    Text: Inchange Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC2739 O-220C 2SC2739 2a 100v NPN ic 3A hfe 500

    2SC4596

    Abstract: 2SC4596 equivalent
    Text: SavantIC Semiconductor Product Specification 2SC4596 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For high speed power switching and DC-DC converter applications


    Original     		PDF 2SC4596 O-220Fa O-220Fa) VCCA30V 2SC4596 2SC4596 equivalent

    U2TA508

    Abstract: 1A 100V DIODE R-1 U2TA510
    Text: POWER DARLINGTONS U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES DESCRIPTION • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 15V max. @ lc = 3A • Economic Plastic Molded Construction Unitrode NPN Dariingtons consist of a


    OCR Scan     		PDF U2TA506 U2TA508 U2TA510 10MHz U2TA506, U2TA510, 1A 100V DIODE R-1 U2TA510

    U2TA510

    Abstract: Unitrode Semiconductor U2TA506
    Text: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction


    OCR Scan     		PDF 13M7cï 0D1E507 U2TA506 U2TA508 U2TA510 U2TA51C 10MHz 300/is; U2TA506, U2TA510 Unitrode Semiconductor

    D1724

    Abstract: 2SB1167 2S017
    Text: Ordering number: EN2047A 2SB1167/2SD1724 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hi


    OCR Scan     		PDF EN2047A 2SB1167/2SD1724 00V/3A 2SB1167 20VM/4 D1724 2SB1167 2S017

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN2047A 2SB1167/2SD1724 NO.2047A PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High f\j.


    OCR Scan     		PDF EN2047A 2SB1167/2SD1724 00V/3A 2SB1167 1167/2S

    TS 4142

    Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
    Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142

    je180

    Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210
    Text: SAMSUNG SEMICONDUCTOR INC MJE172 D | 7^4145 0007^3 4 | PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage


    OCR Scan     		PDF MJE172 -65M50 O-126 MJE170 MJE200 je180 MJE181 MJE180 MJE182 MJE210