AN1149
Abstract: P N Junction diode
Text: application brief AB20 3A replaces AN1149 3A Advanced Electrical Design Models Table of Contents Diode Equation Forward Voltage Model 2 Derivation of Diode Model 2 Calculation of Diode Model Parameters 2 “Worst case” Diode Models 3 Advanced Thermal Modeling Equations
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AN1149
P N Junction diode
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DFN3020B-8
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A
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ZXTPS720MC
-220mV
500mV
DFN3020B-8
DS31938
DFN3020B-8
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SB3U40 Preliminary DIODE 3A SCHOTTKY BARRIER RECTIFIER DESCRIPTION + The UTC SB3U40 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with sort, fast switching capability and low forward voltage
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SB3U40
SB3U40
OD-123S
SB140G-CA2S-R
SB3U40G-CA2S-R
QW-R202-029
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A
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ZXTPS720MC
-220mV
500mV
DFN3020B-8
DS31938
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Schottky Diode 50V 3A
Abstract: AO3701L AO3701
Text: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM
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AO3701
AO3701
AO3701L
0E-03
0E-04
0E-05
0E-06
Schottky Diode 50V 3A
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FDFS2P753Z
Abstract: No abstract text available
Text: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low
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FDFS2P753Z
FDFS2P753Z
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Untitled
Abstract: No abstract text available
Text: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description ̈ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low
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FDFS2P753Z
FDFS2P753Z
500mV
580mV
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FDFS2P753AZ
Abstract: 3a ultra fast diode
Text: FDFS2P753AZ tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench
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FDFS2P753AZ
FDFS2P753AZ
100mA
3a ultra fast diode
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FDFS2P753AZ
Abstract: No abstract text available
Text: FDFS2P753AZ tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench
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FDFS2P753AZ
FDFS2P753AZ
100mA
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LTspice
Abstract: Acbel schematic diagram switching power supply NTC 15K LT8582 LT3786 XAL6060-472ML High Current Battery Charger adapter battery hp 19V Sanyo supercapacitors LTC3115-1
Text: April 2012 I N T H I S I S S U E 2.5MHz, dual monolithic supply with integrated 3A power switches 12 digital power manager sequences any number of supplies 28 dual monolithic ideal diode extends battery life 34 supercapacitor-based power supply backup 36 µModule DC/DC converter
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com/554
LTM8052
SW-COC-001530
LTspice
Acbel schematic diagram switching power supply
NTC 15K
LT8582
LT3786
XAL6060-472ML
High Current Battery Charger
adapter battery hp 19V
Sanyo supercapacitors
LTC3115-1
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APM2802CG
Abstract: APM2802
Text: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET D NC • C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Top View of JSOT-6 Reliable and Rugged
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APM2802CG
APM2802CG
APM2802
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STS6308
Abstract: No abstract text available
Text: STS6308 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 83 @ VGS= 10V 60V Suface Mount Package.
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STS6308
OT-23
OT-23
STS6308
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STT10L01
Abstract: No abstract text available
Text: STT10L01 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 140 @ VGS=10V
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STT10L01
OT-223
STT10L01
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TS-3401
Abstract: 3401ag
Text: S T S 3401 Green Product S amHop Microelectronics C orp. J un.15 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -30V -3A F E AT UR E S S uper high dense cell design for low R DS ON . ( m Ω ) Max R DS (ON) R ugged and reliable.
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OT-23
OT-23
TS-3401
3401ag
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STS3405
Abstract: No abstract text available
Text: STS3405 Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 100 @ VGS=-10V -30V
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STS3405
OT-23
OT-23
STS3405
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100-10L
Abstract: No abstract text available
Text: Green Product SDP/F06N60A S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 6A G D S 1.2 @ VGS=10V,ID=3A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
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SDP/F06N60A
O-220
O-220F
SDP06N60A
SDF06N6
O-220/220F
100-10L
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td 3404
Abstract: 3404A
Text: S T S 3404 Green Product S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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OT-23
OT-23
td 3404
3404A
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Untitled
Abstract: No abstract text available
Text: 30mm 1.2 INCH 5x7 DOT MATRIX DISPLAY Part Number: TBC12-12SURKCGKWA Hyper Red Green Features Description z 1.2 inch matrix height. The Hyper Red source color devices are made with Al- z Dot size 3mm. GaInP on GaAs substrate Light Emitting Diode. z Low current operation.
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TBC12-12SURKCGKWA
DSAK2901
MAY/13/2013
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APB3227
Abstract: No abstract text available
Text: 3.2x2.7mm SURFACE MOUNT LED LAMP Part Number: APB3227SURKCGKC Hyper Red Green Features Description z 3.2mmx2.7mm SMT LED, 1.1mm thickness. The Hyper Red source color devices are made with Al- z Bi -color, low power consumption. GaInP on GaAs substrate Light Emitting Diode.
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APB3227SURKCGKC
daAPB3227SURKCGKC
DSAF6278
AUG/23/2012
APB3227SURKCGKC
APB3227
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k1507
Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
Text: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output
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AP384XG
AP384XG
compatibl00
AP3843G
FDB7030
20TQ045
2200p
k1507
K1507 MOSFET
transistor k1507
transistor cs 9013
Transistor 9013
AP3843GM
k-1507
k1507 TRANSISTOR
AZ3843
transformer ei28
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Untitled
Abstract: No abstract text available
Text: 3.2x2.7mm SURFACE MOUNT LED LAMP Part Number: APB3227SURKZGC ATTENTION Hyper Red Green OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.2mmx2.7mm SMT LED, 1.1mm thickness. The Hyper Red source color devices are made with Al-
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APB3227SURKZGC
2000pcs
DSAM3596
APR/01/2013
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ND30
Abstract: ND3000 ND3048 ND3049 ND3050 power varactor varactor diode high frequency GHz
Text: NEC/ CALIFORNIA 1SE D SEC b427414 Q00n02 / - 07-/9 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • HIGH C U T O F F FR EQ U EN CY; fc-6 = 250 G Hz ND3048 fc-6 = 270 GHz ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.
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b427414
-07-/J
ND3000
ND3048
ND3138
CJO/GJ-25
ND3050
ND3049
ND3050
ND30
power varactor
varactor diode high frequency GHz
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ND3000
Abstract: ND3138 3A ND3048 ND3049 ND3050 3A diode green T 3D 24 DIODE varactor diode high frequency GHz
Text: NEC/ CALIFORNIA 1SE D NEC b427414 Q00n02 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • H IG H C U T O F F F R E Q U E N C Y ; fc -6 = 250 G H z ND3048 fc -6 = 270 G H z ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.
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b427414
Q001102
ND3000
ND3048
ND3138
CJO/GJ-25
ND3050
ND3049
ND3050
ND3138 3A
3A diode green
T 3D 24 DIODE
varactor diode high frequency GHz
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1S1948
Abstract: 1S2063 V03J
Text: 4496205 H I T A C H I / OPTOELECTRONICS V03 • —iSSaiEffl U3 > 5' -f % 6 8C 0 9 7 9 4 o T - ö l - 1 3 — K (General-Use Rectifier Diode) bñ VRRM : 2 0 0 V -8 0 0 V DE I ^ M T L S D S OOOTTTM 0 O ' f (AV) : 1 -3A 62M IN -(2 .4 4 )5 .0M A X "2 9 M IN -+ ^ o .2 H ^ 2 9 M I N - <1-1 4 >
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V03G1600V)
50//F
22/jsec
1S1948
1S2063
V03J
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