2N2195
Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:
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-CDI0DES/0PT03-
3b72SS
2N656
2N699
2N718
2N720
2N735
2N736
2N739
2N740
2N2195
2N1990
2N1893 motorola
2N3700 DIE
motorola 2N2270
2n2102 motorola
2N2297
motorola 2N3019
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MPSA06 transistor
Abstract: MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola
Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 &F|t.3b72SS 0030000 7 CDIODES/OPTO 3 ^c SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) D IE N O . MPSAC05 — LIN E S O U R C E — T ' 2 38008 2- / NPN D M B 1 08 This die provides performance similar to that of the following device types:
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3b72SS
MPSAC05
MPS3402
MPS8000
MPSA05
MPSA06
MPSA06 transistor
MPS-8000
mps-a06
MPSA05 motorola
SILICON DICE motorola
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MJ480
Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
Text: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419
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3b72SS
PL500
2C6316
2C6318
2N3054
2N3713
2N3714
2N2715
2N3716
MJ480
motorola MJ480
2n4913 motorola
2N4232
MJ2802
2n4233
2n5878
2n4912
2N5872
MJ481
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC DI ODE S/OPTO 2SE D t.3b72SS 0 0 6 1 1 3 7 2 • MCR202 thru MCR206 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in
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3b72SS
MCR202
MCR206
b3b72SS
MCR206
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Untitled
Abstract: No abstract text available
Text: MOTOROLA f10T0R0LA sc logic böE » • b3b?ESE gossest ?t? «hotm SEMICONDUCTOR TECHNICAL DATA PECL/TTL-TTL 1:8 Clock Distribution Chip The MC10H/100H646 is a single supply, low skew translating 1:8 clock driver. Devices in the Motorola H600 translator series utilize the 28-lead
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f10T0R0LA
MC10H/100H646
28-lead
80MHz.
BR1333
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors BC549B.C BC550B.C NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Symbol BC549 BC550 Unit Collector- Emitter Voltage VCEO 30 45 Vdc Collector-Base Voltage VCBO 30 Emitter-Base Voltage vebo
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BC549B
BC550B
BC549
BC550
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC10E195 MC100E195 Programmable Delay Chip The MC10E/100E195 is a programmable delay chip PDC designed primarily for clock de-skewing and timing adjustment. It provides variable delay of a differential ECL input transition.
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MC10E195
MC100E195
MC10E/100E195
3b7252
DL140
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motorola bridge rectifier mda
Abstract: motorola bridge rectifier motorola MDA b 104g
Text: D ~T' - 2 3-05 R3fi72SS MOTOROLA SC <DIOPES/OPTO 89D 77437 MOTOR OLA SC {D IO DE S/ OPTO} _ ' _ _ _ MOTOROLA ST DE |t,3t,?2S5 007743 7 S I h A k i^ A k i A #1 n L« 0 by MDA100G/D SEMICONDUCTOR TECHNICAL DATA MDA100G THRU MDA106G Integral Glass Passivated
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R3fi72SS
MDA100G/D
77A-01
MK145BP,
MDA100G
MDA106G
motorola bridge rectifier mda
motorola bridge rectifier
motorola MDA
b 104g
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3Ft 6PIN
Abstract: 3FT 6-pin
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & TO VDE UL & ®®®® CSA SETI 8EMKO DEMKO NEMKO BABT GlobalOptolsolator 6-Pin DIP Optoisolators Transistor Output CNY17-1 {CTR » 40-80% CNY17-2* [CTR •93-126%] CNY17-3* [CTR ■100 -200%] The CNY17-1, CNY17-2 and CNY17-3 devices consist of a gallium
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CNY17-1,
CNY17-2
CNY17-3
CNY17-1
CNY17-2*
CNY17-3*
3Ft 6PIN
3FT 6-pin
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B10100
Abstract: B1060 b1090 b1090 motorola b10100 motorola B1070 b1080 schottky rectifier motorola mbr 1080 schottky rectifier motorola mbr B-1060
Text: MOTOROLA Order this document by MBR1060/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR1060 MBR1070 MBR1080 MBR1090 MBR10100 . . using the Schottky Barrier principle with a platinum barrier metal. These sta te -o f-the -a rt devices have the following features:
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MBR1060/D
MBR1060
MBR1070
MBR1080
MBR1090
MBR10100
MBR10100
3b72SS
B10100
B1060
b1090
b1090 motorola
b10100 motorola
B1070
b1080
schottky rectifier motorola mbr 1080
schottky rectifier motorola mbr
B-1060
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MPS8599
Abstract: MPS8098
Text: M O TO RO LA " b3 b7255 SEMICONDUCTOR TECHNICAL DATA 0 m 3 3 fl3 fc,S2 Am plifier Transistors NPN MPS8098 M PS8099* PNP MPS8598 MPS8599* PNP NPN EMITTER EMITTER MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage C ollector-Base Voltage E m itter-B ase Voltage
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b7255
MPS8098
PS8099*
MPS8598
MPS8599*
MPS859B
MPS8099
MPS8599
MPS8099
MPS8599
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B 835L
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRD835L/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power R ectifier M B R D 835L DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free
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MBRD835L/D
3b72SS
B 835L
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MR2520L
Abstract: C159M
Text: 6 3 6 7 2 55 MOTOROLA SC M O T O R O L _59C 6 1 8 6 6 D T“- / / - 2 3 j Mrjfc.3t.72SS O O b l ö b b 3 <D I O D E S /OPTO A MR2520L MR2525L SEM ICO N D U CTO RS P.O. BOX 20912 • PHOENIX, A RIZO NA 85036 OVERVOLTAGE TR A N S IEN T SUPPRESSORS OVERVOLTAGE
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MR2520L
MR2525L
C159M
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8CA LZ DIODE
Abstract: MLL4370 MLL4371 MLL4372 MLL746 MLL747 MLL748 MLL759 MLL957A MLL986A
Text: MOTOROLA SC { D I O D E S / O P T O J 1 EE D I O Cm aflM - \T-iHI MLL746 thru MLL759 MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MLL957A thru MLL986A 500 MILLIWATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MLL4370 thru MLL4372 • C om plete V o ltage R an g e — 2.4 to 110 V o lts
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MLL746
MLL759
MLL957A
MLL986A
MLL4370
MLL4372
8CA LZ DIODE
MLL4370
MLL4371
MLL4372
MLL746
MLL747
MLL748
MLL759
MLL957A
MLL986A
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VQE 24
Abstract: vqe 24 e VQE 23 E vqe 21 f ad vqe 24 d 12v to 220 v ac inverter MHPM7A16A120B IGBT 50 amp 1000 volt VQE 13 vqe 14
Text: MOTOROLA Order this document! by MHPM7A16A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives MHPM7A16A120B This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A16A120B/D
MHPM7A15S120DC3)
b3b7255
VQE 24
vqe 24 e
VQE 23 E
vqe 21 f ad
vqe 24 d
12v to 220 v ac inverter
MHPM7A16A120B
IGBT 50 amp 1000 volt
VQE 13
vqe 14
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d575 DIODE
Abstract: Motorola Bipolar Transistor BOOK vqe 24 e VQE 22 ym 238 MHPM7B15A60A g10q 10 amp igbt 1000 volt VQE 24 MHPM7A10E60DC3
Text: MOTOROLA Order this document by MHPM7B15A60A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 7B15A60A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7B15A60A/D
MHPM7A10E60DC3)
b3b72S5
01G0303
d575 DIODE
Motorola Bipolar Transistor BOOK
vqe 24 e
VQE 22
ym 238
MHPM7B15A60A
g10q
10 amp igbt 1000 volt
VQE 24
MHPM7A10E60DC3
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U10120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MUR10120E/D SEMICONDUCTOR TECHNICAL DATA SCANSWITCH Power Rectifier M UR10120E For High and Very High Resolution Monitors This state-of-the-art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and
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MUR10120E/D
UR10120E
MUR10120E
MJH16206
MJF16206
L3b72SS
U10120
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a m etal-to-silicon power
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MBRS2040LT3/D
MBRS2040LT3
b3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV809LT1/D SEMICONDUCTOR TECHNICAL DATA S ilicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods.
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MMBV809LT1/D
MMBV809LT1
OT-23
O-236AB)
fei3Li72SS
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1n9638
Abstract: 1N9728 1N9598 1N9618 59 L2 zener 1N4370A 1N4371A 1N4372A 1N746A 1N747A
Text: fîOTOROLA SC DIODES/OPTO 3^E D El 3b72SS ODflB?* 4 Q M 0 T 7 1N746A thru 1N759A, 1N957B thru 1N992B, 1N4370Athru 1N4372A T -n -11 ELEC TR IC A L CHARACTERISTICS (TA= 25“C, VF = 1.5 V Max at 200 mA for all types) Nominal Zener Voltage Maximum Reverse Leakage Current
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OGfl37Â
1N746A
1N759A,
1N957B
1N992B,
1N4370Athru
1N4372A
T-n-11
1N4370A
1N4371A
1n9638
1N9728
1N9598
1N9618
59 L2 zener
1N4372A
1N747A
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MPX201AP
Abstract: mpx pressure sensor MPX201A MPX201DP MPX200a application MPX201 MPX200 circuit 145038 AN922 CL 6807
Text: MOTOROLA SC -CDIODES/ÔPTO} w M E 3 TE D b3 ta7 E 55 aoaaSQfl T O Î1ÔT7 T -65-03 30 01 X-ducer SILICON PRESSURE SENSOR METHOD FOR NUMBERING DEVICE MPX XX X A _ A B C D 0 TO 29 PSI MPX — Indicates Motorola pressure X-ducer. A. Output pressure rating in kilo pascal kPa di
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T-65-03
MPX201D
MPX201AP
mpx pressure sensor
MPX201A
MPX201DP
MPX200a application
MPX201
MPX200 circuit
145038
AN922
CL 6807
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MBR0520L
Abstract: No abstract text available
Text: SOD-123 DEVICES continued Schottky Rectifiers V rrm (Volts) lo (Amperes) •o Rating Condition Device 20 0.5 TL = 105°C MBR0520L 30 0.5 TL = 105°C 40 0.5 TL = 110°C Max Vp @ If Tc = 25°C (Volts) (Amperes) T j Max (°C) 0.310 @0.1 A 0.385 @ 0.5 A 5.0
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OD-123
MBR0520L
MBR0530
MBR0540
3b72SS
00fl7Tm
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2N6165
Abstract: 2n6157 2N6162 2n6160 2n6163 2N6161 2n6164 motorola 2N6161
Text: MO TO RO LA SC D IO DE S / O P T O 3^E D El b 3 b? 2S S DOflSbTQ T E 3 M O T 7 “P x y - i 7 2N6145-47 (See 2N5571) T riacs Silicon Bidirectional Triode Thyristors . . . d e sig n e d p rim a rily for in du strial and m ilitary ap p lica tio n s for the co n tro l of ac
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2N6145-47
2N5571)
b3h725S
2N6157
2N6165
2N6165
2N6162
2n6160
2n6163
2N6161
2n6164
motorola 2N6161
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MP5A05
Abstract: mpsa55 MPSA55 motorola J5001 MPSA05 motorola mpsa56 Motorola mpsa06 MPSA05
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* PNP EMITTER EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Symbol MPSA05 MPSA55 MPSA06 MPSA56 Unit Collector- Emitter Voltage
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MPSA05
MPSA06*
MPSA55
MPSA56*
MPSA06
MPSA56
MPSA55/56
AN469)
MP5A05
MPSA55 motorola
J5001
MPSA05 motorola
mpsa56 Motorola
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