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    3BS MARKING Search Results

    3BS MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    3BS MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    3BS transistor

    Abstract: S0642
    Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER


    OCR Scan     		S0692 OT-23 SC06960 S0642 OT-23 3BS transistor S0642 PDF

    3BS transistor

    Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		BC856T BC856AT BC856BT VPS05996 EHP00381 EHP00380 Jan-08-2002 EHP00382 EHP00379 3BS transistor transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data PDF

    3BS transistor

    Abstract: No abstract text available
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		BC856T VPS05996 BC856AT BC856BT 3BS transistor PDF

    marking code 1AW

    Abstract: tme57 E221SD1CGE h032
    Text: Sealed* Snap-Acting Momentary Pushbutton Switches E020 Series •process sealed-withstands soldering and cleaning processes. SWITCHES WITH STANDARD OPTIONS C8K MARKING ON THIS SIDE EPOXY SEAL .030 TYP. 76 3 NC 2 NO “ 1 .1 8 5 TYP. T 4 , ?0) COMM. -^ .2 6 0 k (6,6 0)


    OCR Scan     		E121SD1CGE E221SD1CGE marking code 1AW tme57 E221SD1CGE h032 PDF

    3BS transistor

    Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W PDF

    3BS transistor

    Abstract: No abstract text available
    Text: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from


    OCR Scan     		200mA fl23SbOÂ 023SbDS 0235b05 3BS transistor PDF

    top marking 1B sot23

    Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23 PDF

    MARKING 3FS

    Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A PDF

    marking code MS SOT323

    Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 marking code MS SOT323 BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860 PDF

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)


    OCR Scan     		2SA1656/2SC4363 2SA1656 rO-92 3C-43 PDF

    C2335

    Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
    Text: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN


    Original     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 C2335 Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw PDF

    transistor packing code 3f

    Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 transistor packing code 3f marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A PDF

    BC 511

    Abstract: Q62702-C2295 MARKING 3FS
    Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,


    OCR Scan     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 BC 511 MARKING 3FS PDF

    C1507

    Abstract: BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887
    Text: PNP Silicon AF Transistors BC 856 . BC 860 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 NPN


    Original     		Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 C1507 BC856 bc857 bc856b b 857 bc npn sot-23 marking 3Fs h11E Q62702-C1851 Q62702-C1887 PDF

    bc856

    Abstract: bc 856
    Text: SIEM ENS PNP Silicon AF Transistors BC 856 . BC 860 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847,


    OCR Scan     		Q62702-C1773 Q62702-C1886 Q62702-C1850 Q62702-C1688 Q62702-C1851 Q62702-C1742 Q62702-C1698 Q62702-C1507 Q62702-C1887 Q62702-C1774 bc856 bc 856 PDF

    LT1086MH

    Abstract: 3BS transistor transistor 3bs
    Text: r jw m TECHNOLOGY LT1086MH/883 _ LT1086MK/883 Low Dropout Positive Adjustable Regulators m n x im u m n n n n G S D ttC M P T IO fl r b s o lu tc The LT 1086M/883 is designed to provide 0.5A for H package and 1.5Afor K package with higher efficiency than


    OCR Scan     		LT1086MH/883 LT1086MK/883 1086M/883 LT1086M/883 MIL-STD883 MIL-STD-883 CA95035-7417* LT1086MH 3BS transistor transistor 3bs PDF

    BC850

    Abstract: BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849
    Text: BC856.BC860 PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC846, BC847, BC848 2 BC849, BC850 NPN 1 Type


    Original     		BC856. BC860 BC846, BC847, BC848 BC849, BC850 BC856A BC856B BC857A BC850 BC856 BC856A BC856B BC857A BC860 BC846 BC847 BC848 BC849 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 847W, BC 848W,


    OCR Scan     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description


    OCR Scan     		IRL6903 -105AÂ 485S4S2 PDF

    bc 212 equivalent

    Abstract: MARKING CODE 21E SOT323
    Text: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,


    OCR Scan     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 bc 212 equivalent MARKING CODE 21E SOT323 PDF

    3BZ marking

    Abstract: 3KASMC10 marking 3Bk 3KASMC18A 3KASMC43A JESD22-B102D J-STD-002B 3kasmc28a 3BW 02 3BW 83
    Text: 3KASMC10 thru 3KASMC43A New Product Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES • Patented PAR construction • Available in Unidirectional polarity only


    Original     		3KASMC10 3KASMC43A DO-214AB J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 3BZ marking marking 3Bk 3KASMC18A 3KASMC43A JESD22-B102D J-STD-002B 3kasmc28a 3BW 02 3BW 83 PDF

    H12E

    Abstract: VSO05561 marking 3GS 858W
    Text: BC 856W . BC 860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846W, BC 847W, BC 848W 2


    Original     		VSO05561 856AW OT-323 856BW 857AW 857BW 857CW H12E VSO05561 marking 3GS 858W PDF

    BC sot23

    Abstract: sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23
    Text: BC 856 . BC 860 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 846, BC 847, BC 848 2 BC 849, BC 850 NPN


    Original     		OT-23 Sep-28-1999 120Hz BC sot23 sot-23 marking 3Fs 21E sot bc 3as 856B 858C 860C 857-C 1B SOT-23 PDF