transistor 3bt
Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface
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BC856W
BC857W
OT-323
BC857W
200Hz
BC856AW
BC857AW
BC856BW
transistor 3bt
marking 3ft sot323
MARKING 3Ft SOT-23-6
marking 3ft
3BT MARKING
BC857BW
3Ft transistor
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transistor 3bt
Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,
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BC856W
BC857W
OT-323
100MHz
200Hz
BC856BW
BC857BW
BC856AW
transistor 3bt
marking 3ft sot323
transistor 3et
transistor 3Ft
3Ft sot
marking code 200a
3Ft transistor
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marking 3ft sot323
Abstract: BC856BW BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W BC858W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification
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M3D187
BC856W;
BC857W;
BC858W
OT323
BC846W,
BC847W
marking 3ft sot323
BC856BW
BC846W
BC848W
BC856AW
BC856W
BC857AW
BC857W
BC858W
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BC857BW-3FT
Abstract: BC856BW TRANSISTOR 3gt BC846W BC847W BC848W BC856AW BC856W BC857AW BC857W
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC856W; BC857W; BC858W PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 07 Philips Semiconductors Product specification
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M3D187
BC856W;
BC857W;
BC858W
OT323
BC846W,
BC847W
BC857BW-3FT
BC856BW
TRANSISTOR 3gt
BC846W
BC848W
BC856AW
BC856W
BC857AW
BC857W
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers
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DD315
BFQ54T
BFQ34T.
0031ST4
BB339
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transistors BC 23
Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
Text: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495
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r-31-0'
BF494
BF494A
BF494B
BF495C
BF495D
transistors BC 23
transistors BC 557b
BHARAT elek
547B
548B
549B
BC547A
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BFQ34T
Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in
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BFQ54T
BFQ34T.
D31SCÃ
BFQ54T
MBB339
BFQ34T
philips MATV amplifiers
25c2570
Philips MBB
MBB339
638 transistor
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation
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10kiJ,
Q62702-C2495
OT-363
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727 Transistor power values
Abstract: transistor 3bt marking FR PNP SOT323 3BT MARKING bc857cw 3Mt transistor BC856BW
Text: Philips Semiconductors Product specification PNP general purpose transistors BC856W; BC857W; BC858W FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 80) 1 • S-mini package. 2 emitter 3 collector base APPLICATIONS • General purpose switching and amplification.
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BC856W;
BC857W;
BC858W
OT323
BC846W,
BC847W
BC848W.
BC856W
BC856AW
BC856BW
727 Transistor power values
transistor 3bt
marking FR PNP SOT323
3BT MARKING
bc857cw
3Mt transistor
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Untitled
Abstract: No abstract text available
Text: TIP41 ;A TIP41B;C PHILIPS INTERNATIONAL SbE D • 7110asb 00H3S1Ô ^3^ ■ PHIN T -3J- H SILICON EPITAXIAL B A SE PO W ER TR A N SIST O R S N PN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP 4 2 series.
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TIP41
TIP41B
7110asb
00H3S1Ô
TIP41
O-220.
7110fl2b
DD43523
T-33-n
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BCW61RA
Abstract: bcx71 bcx71rh BCX71C BCW60
Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,
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BCW61,
BCX71
BCW61
BCX71
BCW60
BCX70
BCW61R
BCX71R.
BCW61RA
bcx71rh
BCX71C
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BC250A
Abstract: No abstract text available
Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura
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BC250A
BC250B
BC250C
BC327
BC327-16
BC327-25
BC327-40
BC328
BC328-16
BC328-25
BC250A
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TIP41 amplifier
Abstract: TIP41 of TIP41 TIP41B TIP42 TIP42 ST TIP42 philips T-33-H
Text: TIP41 ;A TIP41 B;C PHILIPS INTERNATIONAL SbE ]> • 711Dä2b 0043510 W HPHXN~ T -J J -M SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. PNP complements are T IP42 series.
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TIP41
TIP41
7110fl2b
TIP42
O-220.
7Z82918
711065b
TIP41 amplifier
of TIP41
TIP41B
TIP42 ST
TIP42 philips
T-33-H
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BCX71RG
Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,
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BCW61,
BCX71
D002L00
BCW61
BCX71
BCW60
BCX70
BCW61R
BCX71RG
BCW61RA
BCW61RD
transistor marking bh ra
BCW61A
BCW61B
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Untitled
Abstract: No abstract text available
Text: SILICON M ONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8066AS TENTATIVE DATA DUAL LOWSIDE DRIVER Th e TA 8 0 6 6 A S is a 0.3A lo w side driver co n ta in in g tw o circuits in o n e package. T h e in p u t level is T T L com p atib le so th a t th e o u tp u t can
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TA8066AS
R0T7247
2003T
T0T7547
JCH721
002DD41
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Untitled
Abstract: No abstract text available
Text: DABIC-1% 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS The A 6809- and A 6810- devices combine 10-bit CMOS sWft registers, accompanying data latches and control circuitry w tih jH ro la r sourcing outputs and pnp active pull downs. Designed p r im lm p » drive vacuum-fluorescent displays, the 60 V and -40 i^ f c p b ^ r a t i n g s
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10-BIT
A6810
A6809xb$
6739b
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triac BT 139
Abstract: BT 139 Triac BTA06 BTB06 T0220AB
Text: SGS-THOMSON BTA06 T/D/S/A BTB06 T/D/S/A SENSITIVE GATE TRIACS FEATURES • VERY LOW Igt = 10mA max ■ LOW Ih = 15mA max ■ BTA Fam ily: INSULATING VOLTAGE = 2500V r MS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per
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BTA06
BTB06
E81734)
BTA/BTB06
T0220AB
T0220AB
triac BT 139
BT 139 Triac
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BTB06-600
Abstract: BTB60
Text: BTA06 T/D/S/A BTB06 T/D/S/A SGS-mOMSON M M iü lg ïM K SENSITIVE GATE TRIACS FEATURES • VERY LOW Iqt = 10mA max ■ LOW Ih = 15mA max ■ BTA Family: INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high per
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BTA06
BTB06
E81734)
BTA/BTB06
00771bb
T0220AB
DD771b7
BTB06-600
BTB60
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9931 morocco
Abstract: L6504 si24
Text: Æ T S C S 'T H O M S O N EiilOg^OllLKgTr^QHgi L6504 SOLENOID CONTROLLER PRELIM IN ARY DATA . SWITCH MODE CURRENT REGULATION •TTL COMPATIBLE LOGIC INPUTS . DRIVES ONE OR TWO EXTERNAL POWER TRANSISTORS ■VERY PRECISE ON-CHIP REFERENCE . ANALOG CURRENT CONTROL INPUT
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L6504
L6504
9931 morocco
si24
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Untitled
Abstract: No abstract text available
Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.
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BFR93A
BFT93.
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TRANSISTOR SMD MARKING CODE XI
Abstract: No abstract text available
Text: • 0235bOS OD^bbOl 422 SIEMENS 5-V L ow -D rop Fixed V oltage R egulator T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection
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0235bOS
Q67000-A9190
Q67006-A9173
Q67006-A9288
P-DSO-14-4
-20-G
Q67006-A9192
235bOS
TRANSISTOR SMD MARKING CODE XI
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BPNPA16P
Abstract: No abstract text available
Text: Data Sheet November 1997 microelectronics group Lucent Technologies Bell Labs Innovations Quad Differential Drivers DG1A, DP1A, DGLA, PNGA, PNPA, and PPGA Features • Pin-equivalent to the general-trade 26LS31 device, with improved speed, reduced power consumption,
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26LS31
TT350
BPNPA16P
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diac SBS 14
Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation
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2N329A
Abstract: 2N328A JAN MIL-S-18500 2N328A 2N329A JAN ic tba 507 a
Text: MIL-S- 19500/ 110C li m i irr? SUPERSEDING MIL-6- 19500/ HOB 8 November 1965 MUJTARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N328A AND 2N329A Thla specification Is mandatary for uac by all Departmenta and Agende» of the Department of Deiena«.
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MIL-6-19500/HOC
MXL-6-19500/110B
2N328A
2N329A
2N328A)
2N329A)
2N329A
2N328A JAN
MIL-S-18500
2N329A JAN
ic tba 507 a
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