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    3D NPN 400V Search Results

    3D NPN 400V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    3D NPN 400V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR NPN SOT–23 FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 MMBTA44 MMBTA94 EL00V, 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION


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    MMBTA44 OT-23 16-Aug-2012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS „ FEATURES *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW


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    MMBTA44/45 MMBTA44) MMBTA45) 300mA MMBTA94/93 350mW MMBTA44L/MMBTA45L MMBTA44G/MMBTA45G MMBTA44-AE3-R MMBTA45-AE3-R PDF

    3D NPN 400V

    Abstract: MMBTA44 mmbta44g 400V 100MA NPN SOT23 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA44 3d utc mpsa 44
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS „ FEATURES *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW


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    MMBTA44/45 MMBTA44) MMBTA45) 300mA MMBTA94/93 350mW MMBTA44L/MMBTA45L MMBTA44G/MMBTA45G MMBTA44-AE3-R MMBTA45-AE3-R 3D NPN 400V MMBTA44 mmbta44g 400V 100MA NPN SOT23 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA44 3d utc mpsa 44 PDF

    npn 400V switching transistor sot-23

    Abstract: MMBTA44 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA45-AE3-R npn 400V sot-23 sot-23 Marking 3D
    Text: UNISONIC TECHNOLOGIES CO.,LTD. MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW


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    MMBTA44/45 MMBTA44) MMBTA45) 300mA MMBTA94/93 350mW OT-23 MMBTA44L/MMBTA45L MMBTA44-AE3-R npn 400V switching transistor sot-23 MMBTA44 MMBTA44L-AE3-R MMBTA45-AE3-R npn 400V sot-23 sot-23 Marking 3D PDF

    sot 23 3d

    Abstract: SOT-23 3D sot-23 Marking 3D MMBTA44 MMBTA45
    Text: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION


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    MMBTA44/ MMBTA44) MMBTA45) 300mA MMBTA94/93 350mW OT-23 MMBTA44 MMBTA45 sot 23 3d SOT-23 3D sot-23 Marking 3D PDF

    MMBTA44 3D

    Abstract: MMBTA44 MPSA44 3D NPN 400V sot-23 Marking 3D MMBTA45 3101S
    Text: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION


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    MMBTA44/ MMBTA44) MMBTA45) 300mA MMBTA94/93 350mW OT-23 MMBTA44 MMBTA45 MMBTA44 3D MMBTA44 MPSA44 3D NPN 400V sot-23 Marking 3D MMBTA45 3101S PDF

    RE8RB31BU

    Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
    Text: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control  ! % 3% %3      3'33,  3 3% %3 (  +3&-=33&2/=


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    197903476G) MN-EC1113 SG-PL0413 RE8RB31BU LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K PDF

    sot-23 MARKING CODE 3d

    Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23
    Text: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.


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    C210N3 BTC4505N3 10mA/1mA. BTA1759N3 OT-23 UL94V-0 sot-23 MARKING CODE 3d BTA1759N3 BTC4505N3 MARKING 3D SOT-23 PDF

    sot-23 MARKING CODE 3d

    Abstract: 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D
    Text: CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.


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    C210N3-H BTNA44N3 10mA/1mA. BTPA94N3 OT-23 UL94V-0 sot-23 MARKING CODE 3d 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D PDF

    SOT-89 marking 3d

    Abstract: BTA1759M3 BTC4505M3
    Text: CYStech Electronics Corp. Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.


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    C210M3 BTC4505M3 10mA/1mA. BTA1759M3 OT-89 UL94V-0 SOT-89 marking 3d BTA1759M3 BTC4505M3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBTA44 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A FEATURES L S Power dissipation 2 PCM: 3 Top View 1 0.35 W D Collector current ICM: B G 0.3 A Collector-base voltage


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    MMBTA44 SC-59 30MHz 01-Jun-2002 PDF

    npn transistor 0.1A 400V sot-23

    Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
    Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44


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    MMBTA44 350mW OT-23 21-Sep-2010 npn transistor 0.1A 400V sot-23 npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D PDF

    LMBTA94

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application that requires high voltage.


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    LMBTA44LT1G S-LMBTA44LT1G LMBTA44LT1G LMBTA94LT1G AEC-Q101 LMBTA94 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES W (Tamb=25℃) 1.60±0.05 0.35 1.9 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 500 V Operating and storage junction temperature range


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    OT-23-3L OT-23-3L MMBTA44 30MHz PDF

    Jiangsu Changjiang Electronics Technology

    Abstract: 3D NPN 400V 3d sot-23 MMBTA44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current 0.2 A ICM: Collector-base voltage


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    OT-23-3L OT-23-3L MMBTA44 30MHz Jiangsu Changjiang Electronics Technology 3D NPN 400V 3d sot-23 MMBTA44 PDF

    MMBTA44

    Abstract: TRANSISTOR MARKING 3D
    Text: MMBTA44 SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.2 A Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 2. 80¡ À0. 05


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    MMBTA44 OT-23-3L 30MHz MMBTA44 TRANSISTOR MARKING 3D PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES W (Tamb=25℃) 1.60±0.05 0.35 1.9 Collector current ICM: 0.3 A Collector-base voltage


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    OT-23-3L OT-23-3L MMBTA44 30MHz PDF

    MMBTA44 3d

    Abstract: transistor k 975
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


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    MMBTA44 150oC 350mW OT-23 OT-23-3L, 50mAdc, 10mAdc, 20Vdc, 10mAdc 30MHz) MMBTA44 3d transistor k 975 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W


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    MMBTA44 150oC 350mW OT-23 OT-23-3L, perature-------------------------------55 50mAdc, 10mAdc, 20Vdc, 10mAdc PDF

    texas instruments tip48

    Abstract: T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127 TIP47 TIP48 TIP49
    Text: T E X A S I N S T R -COPTO} " ^ DlT^öTblTEb □□3LöS4 "6961726 TEXAS INSTR OPTO 62C 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C TO BER 1 9 8 4 4 0 W at 2 5 ° C C a se Temperature 1 A Continuous Collector Current


    OCR Scan
    003tià TIP47, TIP48, TIP49, TIP50 T0-22QAB TIP47 TIP48 TIP49 TIP50 texas instruments tip48 T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSC5054 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE l-PACK ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cbO Symbol 500 V Collector Emitter Voltage V cE O 400 Emitter Base Voltage V ebo Base Current


    OCR Scan
    KSC5054 300ns, PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan
    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    ci hf cd 100

    Abstract: No abstract text available
    Text: Central CMPTA44 Sem iconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.


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    CMPTA44 CMPTA44 OT-23 ci hf cd 100 PDF