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    3E3 TRANSISTOR Search Results

    3E3 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3E3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC143ZM/ DTC143ZE/DTC143ZUA DTC143ZKA /DTC143ZSA/ DTC143ZCA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without


    Original     		PDF DTC143ZM/ DTC143ZE/DTC143ZUA DTC143ZKA /DTC143ZSA/ DTC143ZCA DTC143ZE OT-523 DTC143ZUA DTC143ZSA O-92S

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC144EM/DTC144EE/DTC144EUA DTC144ECA/DTC144EKA/DTC144ESA DIGITAL TRANSISTOR (NPN) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		PDF DTC144EM/DTC144EE/DTC144EUA DTC144ECA/DTC144EKA/DTC144ESA DTC144EE OT-523 DTC144EUA OT-323 DTC144ESA DTC144EUA/CA/KA DTC144EM

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors EMD12 SOT-563 General purpose transistors (dual transistors) FEATURES z Both the DTC144E chip and DTA144E chip in a package. z Mounting possible with SOT-563 automatic mounting machines.


    Original     		PDF EMD12 OT-563 DTC144E DTA144E OT-563

    chip die npn transistor

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC143ZCA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M+ DTC143ZCA FM1200-M OD-123+ OD-123H FM120-MH FM130-M FM140-MH FM150-MH FM160-MH chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC144EUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M+ DTC144EUA FM1200-M OD-123+ 94overvoltage FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC144ECATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance.


    Original     		PDF FM120-M+ DTC144ECATHRU FM1200-M+ OD-123+ OD-123H FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ DTC144EE THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features • Low profile surface mounted application in order to


    Original     		PDF FM120-M+ DTC144EE FM1200-M OD-123+ OT-523 OD-123H FM140-MH FM150-MH FM160-MH FM180-MH

    DTC144EM

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# DTC144EM Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


    Original     		PDF DTC144EM OT-723 DTC144EM

    marking code ss

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON


    Original     		PDF BSS138 OT-23 OT-23 marking code ss

    marking code ss

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BSS138 OT-23 OT-23 marking code ss

    n20 n21 fet

    Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
    Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital


    Original     		PDF FDG6318PZ 1200m SC-70-6 n20 n21 fet 53E1 FDG6318PZ SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4

    HRF3205 equivalent

    Abstract: data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF HRF3205, HRF3205S HRF3205 equivalent data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205

    UMD22N

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMD22N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Both the DTA143Z chip and DTC143Z chip in a package Mounting possible with SOT-363 automatic mounting machines.


    Original     		PDF UMD22N DTA143Z DTC143Z OT-363 UMD22N

    BU-406D

    Abstract: core 3E1 lg crt tv circuit diagram bu407d
    Text: 7923 E 3 7 _ 00 2 Ô 5 3 7 3 _ * rT \3 3 > -V _ \ f Z 7 S G S -T H O M S O N ^ 7 # [M01fami ¥[R«0 gS S G S-THOMSON BU406D B U 407D /B U 408D BDE » HORIZONTAL TV DEFLECTORS DESCRIPTION The BU406D, BU407D, and BU408D are silicon pla­ nar epitaxial NPN transistors with integrated dam­


    OCR Scan     		PDF M01fami BU406D BU406D, BU407D, BU408D T0-220 BU406D BU407D BU-406D core 3E1 lg crt tv circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: I I N AUER PHILIPS/DISCRETE b^E J> • APX bbS3^31 DD2fl33D 7M5 _ bU4U6P BU407F JV _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators


    OCR Scan     		PDF DD2fl33D BU407F OT186 BU406F

    BU406

    Abstract: BU407 transistor BU406 bu406 ru 8U407
    Text: N AMER PHILIPS/DISCRETE bTE » • bbSB'm 00Sfl22E b72 « A P X Philips Product specification Silicon diffused power transistors DESCRIPTION QUICK REFERENCE DATA High-voltage, high-speed,


    OCR Scan     		PDF BU406/BU407 O-220 BU406 BU407 BU406 -BU406 0D2fl22cl BU407 transistor BU406 bu406 ru 8U407

    407f

    Abstract: 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors
    Text: PHILIPS INTE RNAT ION AL M5E D E3 711Qfi5ti OGaOôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators


    OCR Scan     		PDF 711Qfi5ti BU406F BU407F OT186 1Q62b 3D64t. 407f 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors

    Untitled

    Abstract: No abstract text available
    Text: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings


    OCR Scan     		PDF O-218AA C67078-S3128-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    lg crt tv circuit diagram

    Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326
    Text: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326

    philips power transistor bd139

    Abstract: BU406F BU407F 407F
    Text: N AUER PHILIPS/DISCRETE bbiS3^31 D02fl53G 7M1! M A P X bU 4UblBU 407F bTE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a SO T186 envelope w ith ele c tric a lly Isolated m ounting base, intended fo r use in converters, inverters, sw itching regulators


    OCR Scan     		PDF D02fl53G bU4Ubl-BU407F OT186 BU406F philips power transistor bd139 BU407F 407F

    8U406

    Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors
    Text: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators


    OCR Scan     		PDF 711005b BU406F BU407F OT186 8U406 BC317 Philips philips e3 407F flyback transformer philips BU407F Q030 407F Transistors

    RCA8350B

    Abstract: No abstract text available
    Text: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602


    OCR Scan     		PDF TIP605, TIP606, TIP600, TIP601, TIP602 2N6053, 2N6054. RCA8350, RCA8350A, RCA8350B RCA8350B

    Untitled

    Abstract: No abstract text available
    Text: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF HRF3205, HRF3205S HRF3205 53e-5 38e-3 00e-3 50e-2 33e-1

    Untitled

    Abstract: No abstract text available
    Text: •dering number: EN 3936A Monolithic Linear IC LA7375 No. 3936 A Recording and Playback Amplifier for VHS Video Recorders Overview Package Dimensions The LA7375 is a recording and playback amplifier for VHS-format video tape recorders. It features a two-chan­


    OCR Scan     		PDF LA7375 LA7375 3006B-DIP16 16-pin