Untitled
Abstract: No abstract text available
Text: RB530XN Diodes Schottky barrier diode RB530XN !External dimensions Unit : mm !Applications Rectifying small power 2.0±0.2 1.3±0.1 0.9±0.1 0.65 0.65 (2) 0.1Min. (1) 3H (4) (5) +0.1 −0.05 K K K (3) (2) (1) 0~0.1 (6) 0.2 !Construction Silicon epitaxial planar
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RB530XN
OT-363
100mAwith
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GB-2828-87
Abstract: GB2828-87 diode 4937 850nm laser diode
Text: ELD85NPT50 Multi-Quantum Well MQW Laser Diode Specification Model: ELD85NPT50 ROITHNER LASERTECHNIK A-1040 Vienna, Austria Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0 Fax.: +43-1-586 52 43 44 e-mail: office@roithner-laser.com http://www.roithner-laser.com
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ELD85NPT50
GB-2828-87
GB2828-87
diode 4937
850nm laser diode
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ELD85NPT5
Abstract: GB-2828-87
Text: Multi-Quantum Well MQW Laser Diode Specification Model: ELD85NPT5 03.08.2010 eld85npt5.doc 1 of 11 Catalog 1.Scope……………………………………………………………………………………………………….3 2.Outline Dimensions and Terminal Connections …………………………………… ………………3
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ELD85NPT5
eld85npt5
GB-2828-87
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ELD83NPT5
Abstract: No abstract text available
Text: Multi-Quantum Well MQW Laser Diode Specification Model: ELD83NPT5 03.08.2010 eld83npt5.doc 1 of 10 Catalog 1.Scope……………………………………………………………………………………………………….3 2.Outline Dimensions and Terminal Connections …………………………………… ………………3
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ELD83NPT5
eld83npt5
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ICSP
Abstract: Z86E132 Z86E133 Z86E134 Z86E135 Z86E136 Z86E142 Z86E143 Z86E144 Z86E145
Text: Z86E136 MUZE MAXIMUM MEMORY WITH UART AND ZILOG EXPANDABLE EPROM DS010301-Z8X0400 PROGRAMMING SPECIFICATION ICSP FEATURES • 5-wire connection • Two programming modes—Word and Byte ICSP GENERAL DESCRIPTION The In-Circuit Serial Programming ICSP interface is the OTP programming
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Z86E136
DS010301-Z8X0400
Z86E132
Z86E133
Z86E134
Z86E135
Z86E136
Z86E142
Z86E143
Z86E144
ICSP
Z86E132
Z86E133
Z86E134
Z86E135
Z86E142
Z86E143
Z86E144
Z86E145
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lcd 94V0
Abstract: marking 3H diode 94v0 lcd marking code 3h diode
Text: uClamp3301H Low Voltage ClampTM for ESD and CDE Protection PROTECTION PRODUCTS -MicroClamp Description PRELIMINARY Features The μClamp series of Transient Voltage Suppressors TVS are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones,
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3301H
uClamp3301H
lcd 94V0
marking 3H diode
94v0 lcd
marking code 3h diode
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Untitled
Abstract: No abstract text available
Text: SKM 100GB125DN 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+
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100GB125DN
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Untitled
Abstract: No abstract text available
Text: SKM 100GB125DN 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+
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100GB125DN
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Untitled
Abstract: No abstract text available
Text: SKM 100GB125DN 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+
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100GB125DN
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Untitled
Abstract: No abstract text available
Text: SKM 100GB125DN 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 $ $1: (7 3 -4 5$ (7 3 *4+ 5$ Ultra Fast IGBT Module SKM 100GB125DN *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % (
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100GB125DN
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Untitled
Abstract: No abstract text available
Text: SKM 100GB125DN 3 -4 5$ Absolute Maximum Ratings Symbol Conditions IGBT 6$2 (7 3 -4 5$ (7 3 *4+ 5$ $ *-+ 6 *+ % ( 3 94 5$ 9+ % *4+ % < -+ 6 (7 3 *-4 5$ *+ @ ( 3 -4 5$ A4 % ( 3 9+ 5$ 4 % *4+ % C-+ % -+ % D E+ BBB F *4+
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100GB125DN
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M 47056
Abstract: 47056 diode 476 k
Text: SKiiP 29ANB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %1 8 -%1 . / 0 # . )( 45+6 / . )( 45+6 / 0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7( - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6
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29ANB08V1
M 47056
47056
diode 476 k
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semikron skiip IGBT
Abstract: No abstract text available
Text: SKiiP 39AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper , $0 7 ,$0 - ' . / ! - (' 45*6 . - (' 45*6 . / ! 8 1 3 : Values Units 1(* 15% 41&&6 &'( 4(%%6 9 (* , , ; <* ### = 1'* . 1'' 411'6 &1* 4(&*6
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39AHB16V1
semikron skiip IGBT
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semikron skiip 81 AN
Abstract: 47056 fag 45
Text: SKiiP 29ANB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %1 8 -%1 . / 0 # . )( 45+6 / . )( 45+6 / 0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7( - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6
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29ANB08V1
semikron skiip 81 AN
47056
fag 45
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A35 diode
Abstract: No abstract text available
Text: SKT 240 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 240 Features
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fag 45
Abstract: semikron skiip 47056 29AHB08V1 semikron skiip 81 AN
Text: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %1 8 -%1 . / 0 # . )( 45+6 / . )( 45+6 / 0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7( - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6
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29AHB08V1
fag 45
semikron skiip
47056
29AHB08V1
semikron skiip 81 AN
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gleichrichter
Abstract: No abstract text available
Text: SKT 600 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 600 Features
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Untitled
Abstract: No abstract text available
Text: SKT 551 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristors Thyristors #+, #+,6 #&+, # ?"" 1""
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Untitled
Abstract: No abstract text available
Text: SKT 760 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 760 Features
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Diode 4B
Abstract: No abstract text available
Text: SKT 760 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 760 Features
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IGBT 4A
Abstract: No abstract text available
Text: SKT 600 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor SKT 600 Features
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Untitled
Abstract: No abstract text available
Text: w o n 6fJl i 4 n DIODE OBIUHE CBEÆEHH« AeMn<j epHtiH æhoæ 6/11411 rrpe/ma3HaHeH juin pa6oT b l B ÖJIOKaX CTpOHHOH p a 3 B e p T K H TejieBH 3H O H H bIX n p w 6MHHKOB. KaTOfl — oKCHÆHbiK KocBeHHoro HaKajia. Macca He 6ojiee 20 r. GENERAL The 6^1411 damping diode has been designed for use
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6X103
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KXJ b1
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Octal transceiver with dual enable, non-inverting 3-State 7 . ADTCO« 74ABT623 FEATURES DESCRIPTION • Octal bidirectional bus interface The 74ABT623 high-perform ance BiCMOS device com bines low static and dynam ic power dissipation with high speed and high
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74ABT623
74ABT623
SQT360-1
MO-153AC
KXJ b1
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X7FA
Abstract: 324 DIODE marking Jb diode diode marking aj Symbol of SS-Mini/S-Mini/Mini/Mini
Text: Sheet No. 1/2 CHECKED DESIGNED APPROVED CHECKED Sgnñ& fé/PRO DUCT SPECIFICATION p n a ^ / T Y P E NUMBER:M A 2 S V 0 5 fÖ~l [~Ö~| | | /Ì2 K/Variable Capacitance Diode fflSU/Type ffl&/Appl icat ion V C O/VCO ISiS/Structure i/ U □ yx. ^t-Jüí/Oiit I ine
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SM94itâ
470MHz.
X7FA
324 DIODE
marking Jb diode
diode marking aj
Symbol of SS-Mini/S-Mini/Mini/Mini
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