Untitled
Abstract: No abstract text available
Text: MO SERIES METAL OXIDE RESISTORS ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○
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MIL-STD-202
UL-94V-0
MIL-R-22684
5K10K
100K300K
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2SC3241
Abstract: 330L RF POWER TRANSISTOR 30MHz
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3241 NPN EPITAXIAL PLANAR TYPE DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar typ e transistor Dimensions in mm specifically designed fo r high power am plifiers in HF band. FEATURES • High gain: G pe ^ 12.3dB
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2SC3241
30MHz,
330L
RF POWER TRANSISTOR 30MHz
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K1 transistor
Abstract: No abstract text available
Text: KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH 0 POW ER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector-Base Voltage VcBO Symbol 80 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current VcEO 60 V V ebo 6 V lc 3 A Base Current
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KSC1983
--25mA,
K1 transistor
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