Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3N SOT23 Search Results

    3N SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    3N SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. APE8912/3N-HF-3 1.2V/1.32V 400mA Low Dropout Fixed-Mode Regulator Features Description Maximum dropout at full load current of 1.5V Fast transient response Output current limiting Built-in thermal shutdown Needs Only 1uF Capacitor for stability


    Original     		PDF APE8912/3N-HF-3 400mA APE891X-3 APE891X

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V   IC = -200mA high Collector Current      PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile


    Original     		PDF MMBT3906FA DFN0806 -200mA 435mW MMBT3904FA AEC-Q101 X2-DFN0806-3 J-STD-020 DS36017

    PS331

    Abstract: PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL
    Text: PS3100 Multi-chemistry Smart Battery Manager Module Features • • • Can be programmed with application specific cell parameters for NiMH and Li Ion chemistries • Fully compliant with industry standard Smart Battery Data Specification V1.1a SMBus V1.1 with PEC / CRC-8


    Original     		PDF PS3100 14-bit PS331 PS331S Data sheet of thermistor 10K ohms ntc Microcrystal MX1V-TL-32.768K 2N7002-SOT23 SOT23-GSD SOT23GSD cmr200tb MFR resistor MX1V-TL

    MMBT3906

    Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
    Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT3906 MMBT3904) AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F

    what is major function of RC network

    Abstract: AND8219 ladder network thermal 304E-4
    Text: AND8218/D How to Extend a Thermal−RC−Network Model Derived from Experimental Data to Respond to an Arbitrarily Fast Input Prepared by: Roger Paul Stout, PE and David T. Billings, PE ON Semiconductor Glossary of Symbols R thermal resistance (°C/W) C


    Original     		PDF AND8218/D what is major function of RC network AND8219 ladder network thermal 304E-4

    2N3906 SOT-23

    Abstract: K3N SOT-23 SOT-23 2A 2n3906 sot 23 2n3906 sot23 PNP 2N3906 MMBT3906 2N3906 2N3906 die 2n3906 2a
    Text: 2N3906 / MMBT3906 PNP SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • • MMBT3906 Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available


    Original     		PDF 2N3906 MMBT3906 2N3904/MMBT3904) O-92/SOT-23, MIL-STD-202, OT-23 OT-23 2N3906 SOT-23 K3N SOT-23 SOT-23 2A 2n3906 sot 23 2n3906 sot23 PNP 2N3906 MMBT3906 2N3906 die 2n3906 2a

    CMPD6001

    Abstract: LT1716 LT1716CS5 LT1716IS5 MO-193
    Text: Final Electrical Specifications LT1716 SOT-23, 44V, Over-The-Top, Micropower, Precision Rail-to-Rail Comparator July 2002 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Operates from 2.7V to 44V Over-The-Top : Input Common Mode Range Extends 44V Above V –, Independent of V +


    Original     		PDF LT1716 OT-23, OT-23 quiescent1442 10mVMAX LTC1540 LT1634 10ppm/ LTC1921 CMPD6001 LT1716 LT1716CS5 LT1716IS5 MO-193

    marking JY sot-23

    Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
    Text: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40


    Original     		PDF SR520G-30 OD-723 SR651H-40 OD-323 SR521G-30 BAT54T OT-416 SR751G-40 marking JY sot-23 sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123

    Bi 3101 A

    Abstract: transistor ITT 108 MMBT3904
    Text: MMBT3906 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistor MMBT3904 is recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter. Marking code 3N SOT-23 Plastic Package Weight approx. 0.008 g


    OCR Scan     		PDF MMBT3906 MMBT3904 OT-23 Bi 3101 A transistor ITT 108

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB3N120E/D MTB3N120E In982. 418B-02

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB3N100E/D MTB3N100E MTB3N100E/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET


    OCR Scan     		PDF MTD3N25E/D TD3N25E

    MOSFET MARKING 3F

    Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
    Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A BT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 BS817 BS850 MOSFET MARKING 3F sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE

    MAX4180ESA

    Abstract: No abstract text available
    Text: 19-1221; Rev2; 8/98 >kiyixi>ki Single/Dual/Quad, 2 7 0 M H z , 1mA, SOT23, C u rre n t-F e e d b a c k Amplifiers with S h u td o w n Description The M AX4180 fa m ily of c u rre n t-fe e d b a c k a m p lifie rs c o m b in e s h ig h -sp e e d p e rfo rm a n c e , low d is to rtio n ,


    OCR Scan     		PDF AX4180 MAX4180ESA

    SMBT4403

    Abstract: SMBT5401 SMBT4401 marking 2G SOT23
    Text: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401


    OCR Scan     		PDF OT-23 SMBT2222A SMBT3904 SMBT4401 SMBTA05 SMBTA06 SMBT5551 SMBTA42 OT-23 SMBT4403 SMBT5401 marking 2G SOT23

    Untitled

    Abstract: No abstract text available
    Text: GEC PLESSEY ADVANCE INFORMATION SEMICONDUCTORS D.S. 34431.3 VR25 2.5V PRECISION MICROPOWER BANDGAP VOLTAGE REFERENCE The VR25 is a monolithic integrated circuit using the bandgap principle to provide a precise reference voltage of 2.5V. The VR25 does not require any external capacitance for


    OCR Scan     		PDF OT-23 OT-23 37bfiSE2 37bflSEE 0G22T51

    SOT89 MARKING 2E

    Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
    Text: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application


    OCR Scan     		PDF OT-89 OT-223 BF821 BF822 BF823 BSP16 BSP20 BSR19 BSR19A BSR20 SOT89 MARKING 2E SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551

    IMBT4403

    Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
    Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C


    OCR Scan     		PDF G0D40fl3 OT-23 IMBT3903 IMBT3904 IMBT4400 10Ol3Â IMBT4401 10CX3> IMBT2222 BC807-16 IMBT4403 5n80 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A

    IMBT4401

    Abstract: No abstract text available
    Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A


    OCR Scan     		PDF O-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: F /\IR G H II_ D N ovem ber 1997 MlC O N D U C T O R FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDC653N

    FDC6303N

    Abstract: No abstract text available
    Text: August 1997 F/MRCHII-D M lC O N D U C T O R FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF FDC6303N

    IMBT4403

    Abstract: IMBT4401 IMBT2222 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
    Text: DIODES INC 32E » • 20407^3 00003b3 S H D I I SURFACE M O U N T TRA N SISTO RS -r^-oo, NPN T R A N S IS T O R S -T O -2 3 6 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) Type N u m b er M a rk in g Code IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222


    OCR Scan     		PDF -TO-236 OT-23) IMBT3903 IMBT3904 IMBT4400 IMBT4401 IMBT2222 IMBT2222A 10/mA BC807-16 IMBT4403 6u sot-23 BC817-16 BC817-25 BC817-40 BC846A

    74V1T32

    Abstract: No abstract text available
    Text: s= 7 SGS-THOMSON ^7# KfflO «iLiM(s iO(gS 74V1T32 SINGLE 2-INPUT OR GATE PRELIMINARY DATA . HIGH SPEED: tpD = 5 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Ice = 1 (MAX.) at Ta = 25 °C . COMPATIBLE WITH TTL OLTTPLTTS: V ih = 2V (MIN), Vil = 0.8V (MAX)


    OCR Scan     		PDF 74V1T32 OT23-5L) 74V1T32S 74V1T32