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    PG-TDSON-8-4

    Abstract: 3N06L23 3n06l IPG20N06S3L-23
    Text: IPG20N06S3L-23 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 3N06L23 3n06l IPG20N06S3L-23 PDF

    PG-TDSON-8-4

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-23 Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 PDF