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    3N191 Price and Stock

    Torex Semiconductor LTD XC6223N191NR-G

    IC REG LINEAR 1.9V 300MA SSOT24
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    DigiKey XC6223N191NR-G Reel 3,000
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    Torex Semiconductor LTD XC6223N191MR-G

    IC REG LINEAR 1.9V 300MA SOT25
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    DigiKey XC6223N191MR-G Reel 3,000
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    Torex Semiconductor LTD XC6223N191GR-G

    IC REG LINEAR 1.9V 300MA 4USP
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    DigiKey XC6223N191GR-G Reel 3,000
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    Torex Semiconductor LTD XC6223N1919R-G

    IC REG LIN 1.9V 300MA USPQ-4B03
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    DigiKey XC6223N1919R-G Reel 5,000
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    Avnet Silica XC6223N1919R-G 17 Weeks 5,000
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    Torex Semiconductor LTD XC6223N191PR-G

    IC REG LINEAR 1.9V 300MA SOT89-5
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    DigiKey XC6223N191PR-G Reel 1,000
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    Find more 3N191 price and stock on Findchips.com

    3N191 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N191 Calogic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Original PDF
    3N191 Linear Integrated Systems MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N191 Calogic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Scan PDF
    3N191 Calogic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Scan PDF
    3N191 General Instrument Short Form Data 1976 Short Form PDF
    3N191 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N191 Intersil Dual P-channel enchancement mode MOSFET general purpose amplifier. Scan PDF
    3N191 Intersil Data Book 1981 Scan PDF
    3N191 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N191 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N191 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N191 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N191 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N191 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N191/D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N191/W Unknown Shortform Datasheet & Cross References Data Short Form PDF

    3N191 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF TO-78 TOP VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


    Original     		3N190 3N191 3N190 300mW 525mW 25-year-old, PDF

    3N190

    Abstract: 3N190-91 3N191 X3N190-91
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    Original     		3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oage -55oC 125oC 3N190-91 3N191 X3N190-91 PDF

    3N190

    Abstract: 3N188 3N190-91 3N191 X3N190-91 C2506
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N190 / 3N191 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    Original     		3N190 3N191 3N190-3N191 3N190, -65oC 200oC -55oC 125oC 3N188 3N190-91 3N191 X3N190-91 C2506 PDF

    3N165

    Abstract: 3N190 3N191
    Text: 3N190, 3N191 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE MONOLITHIC DUAL ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)


    Original     		3N190, 3N191 300ms. 3N165 3N190 3N191 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N191 P-CHANNEL MOSFET The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ± 10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF The hermetically sealed TO-78 package is well suited


    Original     		3N191 3N191 300mW 525mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &


    Original     		3N190 3N191 3N190 300mW 525mW 25-year-old, PDF

    2n4416 transistor spice

    Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		3N190 3N191 3N190 3N191 300mW 525mW 2n4416 transistor spice low noise dual P-Channel JFET P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power PDF

    intersil dual p-channel mosfet to-78

    Abstract: 3N190 3N191
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		3N190 3N191 3N190 300mW 525mW intersil dual p-channel mosfet to-78 3N191 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 IGSS ≤ ±10pA LOW GATE LEAKAGE CURRENT Crss ≤ 1.0pF LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS TO-78 TOP VIEW 1 case &


    Original     		3N190 3N191 3N190 300mW 525mW 25-year-old, PDF

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement" PDF

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 PDF

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23 PDF

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A PDF

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent PDF

    3N188

    Abstract: X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191
    Text: CA LO GI C CORP 4ÖE ]> lflMM3E2 0 0 G 0 3 S M 3 • C G C h 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N188-3N191 'T Z 't- 'Z n FEATURES • • • • A B S O L U T E MAXIMUM RATING S T a - 25°C unless otherwise specified


    OCR Scan     		00G03SM 3N188-3N191 3N188, 3N189 3N190, 3N191 10sec) -500nA, -500pA -500HA, 3N188 X3N189 3N189 3N190 3N191 X3N188 X3N190 X3N191 PDF

    3N188

    Abstract: 3N190 3N189 3N191
    Text: □1 SOLID S T A T E DEJ3Ö750Ö1 0 0 1 1 D E 3 fl ^ 7 T - - 2 .7 3N188-3N191 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Input impedance • High Gate Breakdown 3N190-3N191 • Zener Protected Gate 3N188-3N189


    OCR Scan     		3N188-3N191 3N188 3N189 3N190, 3N191 10sec) 300mW 300ns; 3N190 3N189 3N191 PDF

    3N190

    Abstract: No abstract text available
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CO RP O RA TIO N 3N190/3N191 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    OCR Scan     		3N190/3N191 3N190-3N191 3N190, -500HA, 300ns; 3N190 PDF

    3N188

    Abstract: No abstract text available
    Text: _| _ COIOOIC Dual P-Channel Enhancement Mode MOSFET . _ - _ _ CORPORATION 3N190/3N191 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 1)


    OCR Scan     		3N190/3N191 3N190-3N191 3N190, -500nA, -500mA 3N188 PDF

    FMN1

    Abstract: No abstract text available
    Text: M M © ¥ © M M .© LOW POW ER FIELD EFFECT TRANSISTORS m m nnn Cam Styla T O - Geometry V(Br)da Min (V) 3N163 3N164 3N172 3N173 72 72 72 72 FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 3N190 3N191 99 99 99 99 99 99 Mas Max (nA) Max (ohms) 5.0 5.0 5.0 5.0


    OCR Scan     		3N163 3N164 3N172 3N173 2000u 1500u 4000u 4000u FMN1 PDF

    Untitled

    Abstract: No abstract text available
    Text: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189


    OCR Scan     		4M322 00003SM 3N188-3N181 3N190-3N191 3N188-3N189 3N188, 3N189 3N190, 3N191 -500nA, PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N190. 3N191 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE MONOLITHIC DUAL ABSOLUTE MAXIMUM RATINGS NOTE 1 (Tft= 25°C unless otherwise noted)


    OCR Scan     		3N190. 3N191 300ms. PDF

    3N190

    Abstract: 3N190-91 3N191 X3N190-91
    Text: Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier calocflc CORPORATION 3N190/3N191 A B S O L U T E MAXIMUM RATINGS T a = 2 5 ° C u n le s s oth erw ise sp ecifie d FEATU R ES • Very High Input Impedance • High Gate Breakdow n 3N190-3N191


    OCR Scan     		3N190/3N191 3N190-3N191 3N190, 3N191. 10sec) -500nA, -500nA 300ns; 3N190 3N190-91 3N191 X3N190-91 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF