3N80G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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800Volts
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TF2-T
3N80G-at
QW-R502-283
3N80G
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3n80
Abstract: No abstract text available
Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800
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O-220
3n80
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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PDF
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3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
QW-R502-283
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utc 3n80l
Abstract: 3n80 3N80G 3N80L-TF1-T
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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Original
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PDF
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800Volts
3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
3N80L-TM3-T
3N80G-TM3-T
3N80L-TN3-T
utc 3n80l
3n80
3N80G
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"VDSS 800V" mosfet
Abstract: 3N80
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
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Original
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PDF
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3N80L-TA3-T
3N80G-TA3-T
3N80L-TF3-T
3N80G-TF3-T
3N80L-TF1-T
3N80G-TF1-T
O-220
O-220F
O-22ues
QW-R502-283
"VDSS 800V" mosfet
3N80
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3N80
Abstract: to-220 weight
Text: IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS on = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800
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O-220
3N80
to-220 weight
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3n80
Abstract: 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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3N80L
3N80G
3N80-TA3-T
3N80-TF3-T
QW-R502-283
3n80
3n80 data sheet
400v 3a ultra fast recovery diode
3n80 rds
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3N80
Abstract: utc 3n80l ULTRA FAST diode 400v 5a transistor 3N80 IGS TECHNOLOGIES MOSFET 400V TO-220 MOSFET 800V 3A 25V 1A power MOSFET TO-220 3n80 rds 400v 3a ultra fast recovery diode
Text: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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3N80L
3N80G
3N80-TA3-T
3N80-TF3-T
QW-R502-283
3N80
utc 3n80l
ULTRA FAST diode 400v 5a
transistor 3N80
IGS TECHNOLOGIES
MOSFET 400V TO-220
MOSFET 800V 3A
25V 1A power MOSFET TO-220
3n80 rds
400v 3a ultra fast recovery diode
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Untitled
Abstract: No abstract text available
Text: 3VD329800YL 3VD329800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD329800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ 3 1 Advanced termination scheme to provide enhanced
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3VD329800YL
3VD329800YL
O-220
24mmtion
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3n80
Abstract: No abstract text available
Text: 3VD329800YL 3VD329800YL 高压MOSFET芯片 描述 ¾ 3VD329800YL为采用硅外延工艺制造的N沟道增强型 800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 3 1 ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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3VD329800YL
3VD329800YL
3VD329800YLN
800VMOS
O-220,
X586m
O-220
3n80
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CHINA TV FBT
Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV
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O-92M
KRC102M
KRC112M
O-92L
KTN2369,
KTC3194
KTC3197,
KTC3198
KTC945B
KIA431
CHINA TV FBT
transistor 2N3906 smd 2A SOT23
TS4B05G
transistor 2N3904 smd 2A SOT23
fbt tv
KIA7812API
KIA431A transistor
transistor KIA431A
CHINA TV uoc
2N60 MOSFET SMPS
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P3N80
Abstract: 3N80 MTP3N75 mtp3n80 3N75 MOSFET 3N 200
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 3N75 M TM 3N80 M T P 3N 75 M T P 3N 80 Designer's Data Sheet Power Field Effect Transistor IM-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S P ow er FETs are designed fo r high vo ltag e , high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regu la to rs,
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MTM/MTP3N75,
P3N80
3N80
MTP3N75
mtp3n80
3N75
MOSFET 3N 200
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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