3qn04h2
Abstract: IPB160N04S3-H2 ANPS071E PG-TO263-7-3
Text: IPB160N04S3-H2 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on 2.1 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)
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PDF
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IPB160N04S3-H2
PG-TO263-7-3
3QN04H2
3qn04h2
IPB160N04S3-H2
ANPS071E
PG-TO263-7-3
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3qn04h2
Abstract: MJ4036 145nC 73 marking PG-TO263-7-3
Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB160N04S3-H2 Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on 2.4 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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PDF
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IPB160N04S3-H2
PG-TO263-7-3
3QN04H2
9600pF
2600pF
465pF
165nC
3qn04h2
MJ4036
145nC
73 marking
PG-TO263-7-3
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3qn04h2
Abstract: GD 898 A44E 165NC
Text: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB160N04S3-H2 Product Summary V DS 40 V R DS on 2.4 mΩ ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
|
Original
|
PDF
|
IPB160N04S3-H2
PG-TO263-7-3
3QN04H2
9600pF
2600pF
465pF
165nC
145nC
3qn04h2
GD 898
A44E
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