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    3SK23 Price and Stock

    Micro Commercial Components SK23HE3-LTP

    Schottky Diodes & Rectifiers 2A SCHOTTKY RECTIFIER
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    Mouser Electronics SK23HE3-LTP
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    Micro Commercial Components SK23-LTP

    Schottky Diodes & Rectifiers DIODE SCHOTTKY 30V 2A DO214AA
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    Mouser Electronics SK23-LTP
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    Hitachi Ltd 3SK234XXTL4B5

    SMALL SIGNAL HIGH FREQUENCY AMPLIFIER FET Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 3SK234XXTL4B5 6,000
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    Hitachi Ltd 3SK234XXTL4C4

    SMALL SIGNAL HIGH FREQUENCY AMPLIFIER FET Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 3SK234XXTL4C4 3,000
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    Hitachi Ltd 3SK233XWTL6D4

    SMALL SIGNAL HIGH FREQUENCY AMPLIFIER FET Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA 3SK233XWTL6D4 2,760
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    3SK23 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK23 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3SK23 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3SK23 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3SK23 Unknown FET Data Book Scan PDF
    3SK23 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3SK23 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    3SK230 NEC Semiconductor Selection Guide 1995 Original PDF
    3SK230 NEC RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Original PDF
    3SK230 NEC Semiconductor Selection Guide Original PDF
    3SK230 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    3SK230 Unknown FET Data Book Scan PDF
    3SK231 NEC Semiconductor Selection Guide 1995 Original PDF
    3SK231 NEC RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Original PDF
    3SK231 NEC Semiconductor Selection Guide Original PDF
    3SK231 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    3SK231 Unknown FET Data Book Scan PDF
    3SK232 Toshiba N channel dual gate MosFet Original PDF
    3SK232 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    3SK232 Toshiba Field Effect Transistor Silicon N-Channel Dual Gate MOS Type Scan PDF
    3SK232 Toshiba N-channel silicon dual gate MOS type transistor Scan PDF

    3SK23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK232

    Abstract: No abstract text available
    Text: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)


    Original     		PDF 3SK232 3SK232

    3SK239A

    Abstract: Hitachi DSA00307
    Text: 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB Typ at f = 900 MHz • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit


    Original     		PDF 3SK239A 3SK239A Hitachi DSA00307

    3SK232

    Abstract: No abstract text available
    Text: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications • Unit: mm Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)


    Original     		PDF 3SK232 3SK232

    Untitled

    Abstract: No abstract text available
    Text: 3SK232 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK232 TV Tuner, UHF RF Amplifier Applications • Unit: mm Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF typ. • Low noise figure.: NF = 1.5dB (typ.)


    Original     		PDF 3SK232

    3SK230

    Abstract: U1A marking
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB


    Original     		PDF 3SK230 SC-61) 3SK230 U1A marking

    3SK236

    Abstract: No abstract text available
    Text: 3SK236 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK236 3SK236

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original     		PDF 3SK231 3SK231

    NEC k 1760

    Abstract: UAA 146 3SK230 UAA 2001
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB


    Original     		PDF 3SK230 SC-61) NEC k 1760 UAA 146 3SK230 UAA 2001

    3sk239a

    Abstract: Hitachi DSA001650
    Text: 3SK239A GaAs N-Channel Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK239A


    Original     		PDF 3SK239A D-85622 3sk239a Hitachi DSA001650

    1SV211

    Abstract: 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK146 3SK275
    Text: Transistors & Diodes for TV Receiver Tuner F5 ~ ~ '^ Ç » ck a g e A p p lic a tio n -^ TO-92 Super Mini SC-59 USM (SC-70) SMQ (SC-61) SSM RF 3SK146 3SK207 3SK153 3SK232 #3SK240 3SK249 2SC3828 #3SK250 3SK259 2SC4214 MIX 2SC3121 2 SC4246 2SC3120 2SC4245


    OCR Scan     		PDF SC-59) SC-70) 3SK146 3SK153 2SC3828 2SC4214 SC4244 2SC3121 2SC3120 2SC3862 1SV211 2SC2348 2SC2347 3SK240 1SV259 2SC382 3SK275

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 TV TUNER, UHF RF AM PLIFIER APPLICATIONS nTT Unit in mm • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)


    OCR Scan     		PDF 3SK232 800MHz TTA25A200A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK231 SC-61)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan     		PDF 3SK231 SC-61)

    Untitled

    Abstract: No abstract text available
    Text: 3SK239A GaAs Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low vol tage operation NF = 1.3 dB Typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 1093 3SK239A


    OCR Scan     		PDF 3SK239A

    marking 7T transistor

    Abstract: No abstract text available
    Text: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure.


    OCR Scan     		PDF 3SK232 961001EAA2' marking 7T transistor

    IG2U

    Abstract: No abstract text available
    Text: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK—4 .A 3 , HHptft td itltO A n ic lä f ^ 1 . Source


    OCR Scan     		PDF 3SK239A D-85622 IG2U

    marking g1s

    Abstract: 3SK238
    Text: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C


    OCR Scan     		PDF 3SK238-------------Silicon 3SK238 VC52S marking g1s 3SK238

    transistor C5080

    Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
    Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295


    OCR Scan     		PDF 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3S K232 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance. : Crss = 20fF TYP. : NF = 1.5dB (TYP.)


    OCR Scan     		PDF 3SK232 800MHz TTA25A200A

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL DUAL GATE MOS T Y P E FIELD E F F E C T TRANSISTOR 3SK232 O TV TUNER, UHF RF A M PLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : C rss = 20fF T YP. • Low Noise Figure. : N F = 1.5dB (T YP.)


    OCR Scan     		PDF 3SK232 800MHz 800MHz TTA25A200A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 d B /i (TYP.) @ f = 470 MHz, G r = -3 0 dB


    OCR Scan     		PDF 3SK230 SC-61)

    MESFET Application

    Abstract: 52s marking MARKING 52S
    Text: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2


    OCR Scan     		PDF 3SK239A--------------GaAs 3SK239A MESFET Application 52s marking MARKING 52S

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK232 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3 <; k i * mm m t • m. O TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. « r j U nit in mm r -e • Low Reverse Transfer Capacitance. : Crss = 20f!F TYP.


    OCR Scan     		PDF 3SK232

    3SK232

    Abstract: No abstract text available
    Text: SILICON N CHANNEL DUAL GATE MOS TYPE 3SK232 O TV TUNER, UHF RF AM PLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF TYP. • Low Noise Figure. : NF = 1.5dB (TYP.) M A X IM U M RATINGS (Ta = 2 5°C)


    OCR Scan     		PDF 3SK232 800MHz TTA25A200A 3SK232