Untitled
Abstract: No abstract text available
Text: 3SK272 High Frequency FETs 3SK272 GaAs N-Channel MES Unit : mm For VHF-UHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 2 4 1 Rating VDS 13 Unit V Gate 1-Source voltage VG1S –6 V Gate 2-Source voltage
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3SK272
800MHz
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3sk272
Abstract: SC-82
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current
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3SK272
SC-82
3sk272
SC-82
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3sk272
Abstract: IG2D
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 13 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA
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3SK272
800MHz
3sk272
IG2D
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3sk272
Abstract: No abstract text available
Text: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature
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3SK272
3sk272
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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MIP504
Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
Text: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in
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OCR Scan
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MIP803
15/70mA
140kHz
140kH2
MIP80ute
3SK241
3SK272
3SK273
3SK287
3SK282
MIP504
TO-92NL
TO92NL
3SK282
"Intelligent Power Device"
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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OCR Scan
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3SK241
Abstract: 3sk272 2SK649 3sk287 2SK1962 2SK1963 2SK1964 2SK690
Text: Field Effect Transistors • GaAs MES Metal Semiconductor FETs • For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. Vqis * V gs (V) V ds (V) V g 2S Pd (V ) (mW) (dB) NF typ. (dB) PG typ. Package
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OCR Scan
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3SK241
3SK272
3SK273
A3SK287
A3SK282
2SK690
25dBm
2SK649
3sk287
2SK1962
2SK1963
2SK1964
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3SK2411
Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)
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OCR Scan
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2SC1215
3SK268
2SC3354
2SC4716
2SC3354
2SC2636
3SK2411
2SC1215
3SK143
3SK22
3sk169
3SK247
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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3sk287
Abstract: 3SK139 3sk247 3SK285
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type
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OCR Scan
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3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk287
3SK139
3sk247
3SK285
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3sk272
Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Text: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)
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OCR Scan
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2SC1215
3SK268
3SK144
3SK202
3SK241
3SK268
3SK286
2SC1215
2SC3354
2SC2636
3sk272
2SK1964
3sk247
3SK270
3SK271
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PDF
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2SK1964
Abstract: 3SK241 3sk272 2SK1963 3SK273 2SK649 3sk287 2SK1962 2SK690 D37B
Text: Field Effect Transistors • GaAs MES Metal Semiconductor FETs # For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. V ds (V) V g is * V gs (V) (V) P (mW) PG typ. (dB) NF typ. (dB) V g2S Package
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OCR Scan
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3SK241
3SK272
3SK273
A3SK287
A3SK282
2SK690
25dBm
2SK1964
2SK1963
2SK649
3sk287
2SK1962
D37B
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3sk287
Abstract: 3sk272 2SK690 "Intelligent Power Device"
Text: Field Effect Transistors • IPD Intelligent Power Device (continued) Application Output Breakdown Voltage Type No. EL Driver MIP803 Application Type No. Output MOS FET Vcc VDSS Id 1.5 -3 .5 V 200V 15/70mA Input Voltage VlN Output Breakdown Voltage Package
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OCR Scan
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MIP803
15/70mA
140kHz
MIP501
MIP502
AC/12V
O-92NL
3SK241
3SK272
3SK273
3sk287
2SK690
"Intelligent Power Device"
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