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    DTG-600

    Abstract: DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400
    Text: 6ERMANIUM POWER DEVICES b3E ]> • 3T47375 DGOOSfl1! Gb7 ■ G P D GERMANIUM POWER TRANSISTORS I Type N um ber C U R R E N T G A IN tlF£ Vck @ 1c M ax. V A Case Type VCBO V ycio y MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 4i' 30 60 4Î 30 2N4276 2N4277


    OCR Scan     		PDF 3T47375 SDT1909 MT-23 SDT1910 SDT2008 MT-22 SDT2009 SDT2010 DTG-600 DTG-2400 DTG-110B DTG110B DTG-1010 sc103 DTG110 2N4276 FS20R06XE3 DTG2400

    germanium power devices corporation

    Abstract: G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power
    Text: 3T47375 G0G0731 b=î4 l ü l Germanium Power Devices Corporation G -« *. High Reverse Énergy/Ultra-Low Vp G 15S 20 PRELIMINARY SPECIFICATIONS M k t,. ^ "*Ls°U J î 5 S ^ ! i _ | MAXIMUM RATINGS: IF avg


    OCR Scan     		PDF 3T47375 G0G0731 300psec 305mv 350mv 390mv 440mv 240mv 290mv germanium power devices corporation G15S20 3T47375 Germanium Power Devices 400AMPS Germanium power

    applications of ujt with circuits

    Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		PDF 3T47375 506-475-5982---fax applications of ujt with circuits UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan     		PDF 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N1378 2N1924 2N2374 2N1373 2N1274 2N1305 2N2001

    2N1377

    Abstract: 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309
    Text: GERMANIUM PNPSMALL SIGNAL TRANSISTORS 1im hFC Min Max ycBo V Max YFWO V Max Vc, V Max 2N465 2N 466 45 35 12 12 30 20 20 20 15 15 27-45 56-90 1 1 2N467 2N508 2N 508A 2N 522 2N 524 35 20 30 15 30 12 10 10 10 15 15 18 25 8 30 20 20 25 15 30 15 6 7 2 10 112-180


    OCR Scan     		PDF NS257 2N1377 2N1414 2N1373 2n1614 Germanium power 2N1925 2N508 2N526 2N1309

    Untitled

    Abstract: No abstract text available
    Text: G Ge pn, pin Detectors CAPACITANCE vs. REVERSE BIAS Special Options High response at short wavelength available BNC connectors Thermoelectric coolers Dewars Neutral density filters Reflective filters AR-coated lenses/windows Custom devices including arrays


    OCR Scan     		PDF GEP600 GEP700 GEP800 MIL-45208 MIL-S-19500 MIL-S-19500. MIL-STD-883,

    Germanium Power Devices

    Abstract: GAP100 GAP60CS 10E-15 GAP300 GAP60 GAP75 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation
    Text: E GAP60 GAP60CS GAP75 GAP100 GAP300 Electrical Characteristics @ 25 °C GAP60/CS GAP75 GAP100 60 75 100 O Responsivity @ 850nm 0.10 0.20 0.10(0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) 0.80 (0.90) A/W min. (typ.)


    OCR Scan     		PDF GAP60 GAP60CS GAP75 GAP100 GAP300 GAP60/CS GAP75 850nm Germanium Power Devices 10E-15 GAP300 apd 1550 fall time, dark, capacitance 850nm APD germanium power devices corporation

    Untitled

    Abstract: No abstract text available
    Text: E GAV30 GAV50 GAV60 GAV100 Electrical Characteristics @ 25 °C GAV30 GAV50 GAV60 GAV100 Units Quantum Efficiency 60 70 60 (70) 60 (70) 60 (70) % min. (typ.) Responsivity @1300nm .76 (.84) .76 (.84) .76 (.84) .76 (.84) AAV min. (typ.) M=1 Breakdown Voltage *


    OCR Scan     		PDF GAV30 GAV50 GAV60 GAV100 GAV30 GAV60 1300nm IL-45208

    GM10HS

    Abstract: GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt
    Text: GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 Typical Specifications at Room Temperative Ge Photodetector ACTIVE DIA. TYPE SPEC TR A L RESPO N SE MM (m) L DARK V (v) R E V E R S E 1UNT R* VOLTAGE C 0R R EN T RESÌSTA NCEKQ


    OCR Scan     		PDF D000535 GM10HS GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt