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    Abstract: No abstract text available
    Text: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon 3 epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability.


    Original     		3VD212600YL 3VD212600YL O-251 1N60A. PDF

    Planar gAte Power MOSFET Wafer

    Abstract: 1N60A TO-251 Package
    Text: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD212600YL 3VD212600YL O-251 1N60A. 2020m 1920m Planar gAte Power MOSFET Wafer 1N60A TO-251 Package PDF

    1N60A

    Abstract: 3VD212600YL
    Text: 3VD212600YL 3VD212600YL 高压MOSFET芯片 描述 Ø 3VD212600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3VD212600YL 3VD212600YL 3VD212600YLN 600VMOS O-251 1N60A 2020m 1920m 3640dice/wafer 1N60A PDF