2n60
Abstract: 2n60 MOSFEt 2n60 equivalent 3VD235600YL
Text: 3VD235600YL 3VD235600YL 高压MOSFET芯片 描述 Ø 3VD235600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
|
Original
|
PDF
|
3VD235600YL
3VD235600YL
3VD235600YLN
600VMOS
O-251
2060m
2720m
600VVGS
2n60
2n60 MOSFEt
2n60 equivalent
|
2n60 equivalent
Abstract: 3VD235600YL 2n60 TO-251 Package PD44
Text: 3VD235600YL 3VD235600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD235600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
|
Original
|
PDF
|
3VD235600YL
3VD235600YL
O-251
2n60 equivalent
2n60
TO-251 Package
PD44
|
2n60 equivalent
Abstract: No abstract text available
Text: 3VD235600YL 3VD235600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD235600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
|
Original
|
PDF
|
3VD235600YL
3VD235600YL
O-251
2n60 equivalent
|