600VMOS
Abstract: 4N60 3VD297600YL
Text: 3VD297600YL 3VD297600YL 高压MOSFET芯片 描述 ¾ 3VD297600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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3VD297600YL
3VD297600YL
3VD297600YLN
600VMOS
O-220
600VVGS
10VID
30VVDS
600VMOS
4N60
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4N60
Abstract: 3VD297600YL 4542m
Text: 3VD297600YL 3VD297600YL 高压MOSFET芯片 描述 Ø 3VD297600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD297600YL
3VD297600YL
3VD297600YLN
600VMOS
O-220
3200m
2760m
4N60
4542m
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mosfet 4n60 power supply
Abstract: mosfet 4n60 3VD297600YL 4n60 4N60 equivalent
Text: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
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Original
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PDF
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3VD297600YL
3VD297600YL
O-220
3200m
2760m
mosfet 4n60 power supply
mosfet 4n60
4n60
4N60 equivalent
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4N60 equivalent
Abstract: No abstract text available
Text: 3VD297600YL 3VD297600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD297600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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Original
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PDF
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3VD297600YL
3VD297600YL
O-220
4N60 equivalent
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