CD22101E
Abstract: CD22101 CD22101F CD22102 CD22102E CD4029
Text: CD22101, CD22102 S E M I C O N D U C T O R CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON Resistance . . . . . . . . . . . . 75Ω Typ at VDD = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a
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CD22101,
CD22102
CD22101
CD22102
16-line
91-CA
CD22101E
CD22101F
CD22102E
CD4029
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Untitled
Abstract: No abstract text available
Text: CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March1993 Features Description • Low ON Resistance. 75V Typ. atVpo = 12V CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints transmission gates with a 4line to 16-line decoder and 16 latch circuits. Any one of the
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CD22101,
CD22102
CD22101
CD22102
16-line
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0U47
Abstract: COSMOS 817 COSMOS RA TP20N
Text: HARRIS SEMICOND SECTOR ffl blE ]> 43D5271 004721^ 2?T B H A S CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory March 1993 Features Description • Low ON Resistance. 75V Typ. at V qq > 12V CD22101 and CD22102 crosspoint switches consist of 4 x
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43D5271
CD22101,
CD22102
CD22101
CD22102
16-line
77VRUS
91-CA
0U47
COSMOS 817
COSMOS RA
TP20N
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MC145100
Abstract: MC-142100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCI 42100 MC145100 4 x 4 Crosspoint Switch with Control Memory The MC142100 and MC145100 consist of 16 crosspoint switches analog transmission gates organized in 4 rows and 4 columns. Both devices have 16 latches, each of which controls the state of a particular switch. Any of the 16
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MC142100
MC145100
MC145100,
CD22100
MC145100
MC-142100
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Untitled
Abstract: No abstract text available
Text: [ L3L7253 DDfi^EBfl MDR • M O T S bbE D MOTOROLA SEMICONDUCTOR MOTOROLA SC TELECOM TECHNICAL DATA MCI 421OO MCI 451OO 4 x 4 Crosspoint Switch with Control Memory The MC142100 and MC145100 consist of 16 crosspoint switches (analog transmission gates) organized in 4 rows and 4 columns. Both devices have 16
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L3L7253
421OO
451OO
MC142100
MC145100
MC14XXXX
MC142100Â
MC145100
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KT8592N
Abstract: 4X4 ANALOG crosspoint switch KT8592 switch plexer
Text: CMOS INTEGRATED CIRCUIT KT8592 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY The KT8592 consists of 4 x 4 matrix-array with 16 latches. Any one of 16 switches can be selected by applying its address to the device and a pulse to the strobe input pin. The selected switch can be turn
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KT8592
KT8592
KT8592N
16DIP
4X4 ANALOG crosspoint switch
switch plexer
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Untitled
Abstract: No abstract text available
Text: C D 22100 Semiconductor CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON R esistan ce. 7 5 ß (Typ) at V DD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmis
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CD22100
16-line
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Untitled
Abstract: No abstract text available
Text: h a frris CD22101, CD22102 S E M I C O N D U C T O R M W a j a CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory January 1997 Features Description • Low ON R esistan ce.750 . Typ at V DD = 12V CD22101 and CD22102 crosspoint switches consist of
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CD22101,
CD22102
CD22101
CD22102
16-line
77VRMS
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XO 403
Abstract: No abstract text available
Text: KT8592 CMOS INTEGRATED CIRCUIT 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY The KT8592 contains 4 x 4 matrix-array w ith 16 latches. Any one of 16 switches can be selected by applying its address to the device and a pulse to the strobe input pin. The selected switch can be turn
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KT8592
KT8592
KT8592N
16DIP
XO 403
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M22100
Abstract: PLCC20 22100 switch
Text: M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY . . . . . LOW ON RESISTANCE – 75 Ω TYP. AT VDD = 12 V ”BUILT-IN” CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY ± VDD/2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS ∆RON = 18 Ω TYP. AT VDD – VSS = 12 V.
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M22100
M22100
PLCC20
22100 switch
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Untitled
Abstract: No abstract text available
Text: S3 CD22101, CD22102 CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory J a n u a ry 1997 Features Description 75£i Typ at Vpp = 12V • "Built - In” Latched Inputs • Large Analog Signal Capability. i^oc/2 • Switch Bandw
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CD22101,
CD22102
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M402101BP
Abstract: No abstract text available
Text: MITSUBISHI < DIGITAL ASSP> M402101BP 4 X 8 CROSSPOINT SWITCH WITH CONTROL MEMORY DESCRIPTION The M 402101B is a semiconductor integrated circuit con PIN CONFIGURATION TOP VIEW sisting of a 4 X 8 cross point switch capable of selecting 32 analog switches with 5 address inputs as well as 2 types of
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M402101BP
402101B
100dB
110dB.
ti54Tfl2b
Q021Q37
M402101BP
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P043A
Abstract: transistor Y4 M22101 M22102 P058C
Text: M22101 M22102 4 X 4 X 2 CROSSPOINT SWITCHES WITH CONTROL MEMORY . . . . . LOW ON RESISTANCE – 75 Ω TYP AT VDD = 12 V ”BUILT-IN” LATCHED INPUTS LARGE ANALOG SIGNAL CAPACITY ± VDD/2 10 MHz SWITCH BANDWITH MATCHED SWITCH CHARACTERISTICS ∆ RON = 8 Ω TYP, AT VDD = 12 V
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M22101
M22102
M22101
M22102
16-line
P043A
transistor Y4
P058C
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4-line-to-16-line decoder ic
Abstract: transistor types full 22100 switch
Text: £ ÿ j SCS-THOMSON IŒ gm[IOT(ô iQ(gS M22100 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY LOW ON RESISTANCE - 75 £2 TYP. AT V d d = 12 V "BUILT-IN" CONTROL LATCHES LARGE ANALOG SIGNAL CAPABILITY± V dd /2 TRANSMITS SIGNALS UP TO 10 MHz MATCHED SWITCH CHARACTERISTICS
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M22100
M22100
4-line-to-16-line decoder ic
transistor types full
22100 switch
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC KT8592 4SEj> • 00 D i a s i s vitM m s CMOS INTEGRATED CIRCUIT 4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY T h e K T8592 contains 4 x 4 m atrix-array with 16 latches. Any one of 16 switches can be selected by applying Its address to the device
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KT8592
T8592
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Untitled
Abstract: No abstract text available
Text: m CD22100 HARRIS S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating March 1993 Description Features • Low ON Resistance.75ft Typ. at Vqo» 12V CD22100 combines a 4 x 4 army of crosspoints (transmis
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CD22100
CD22100
16-line
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automatic transfer switch circuit diagram
Abstract: CD22100E
Text: HARRIS SEniCOND SECTOR blE D • 4302271 004721D Q42 B H A S 33 CD22100 CMOS 4 x 4 Crosspoint Switch with Control Memory High-VoltageType 20VRating March 1993 Features Description • Low ON Resistance. 750 Typ. at V qq » 1 2V CD22100 combines a 4 x 4 array of crosspoints (transmis
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004721D
CD22100
20VRating)
CD22100
16-line
CD22100,
automatic transfer switch circuit diagram
CD22100E
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22100 CMOS cross point switch
Abstract: 4X4 ANALOG crosspoint switch
Text: SSI 2 2 1 0 0 CMOS 4x4 Crosspoint Switch with Control Memory Siliconsuifrns INNOVATORS IN/INTEGRATION Data Sheet GENERAL DESCRIPTION FEATURES The SSI 22100 combines a 4 x 4 array of crosspoints transmission gates with a 4-iine-to-16 decoder and 16 latch circuits. Any one of the sixteen transmission gates
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4-iine-to-16
22100 CMOS cross point switch
4X4 ANALOG crosspoint switch
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Untitled
Abstract: No abstract text available
Text: H A R R CD22100 I S S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON Resistance. 75ß (Typ) at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmis
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CD22100
CD22100
16-line
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22100 switch
Abstract: CD22100 cd22100 rca
Text: MmMbtis SSI 22100 CMOS 4x4 Crosspoint Switch with Control Memory INNOVATORS IN/INTEGRATION Data Sheet GENERAL DESCRIPTION FEATURES The SSI 22100 com bines a 4 x 4 array of crosspoints transm ission gates with a 4-line-to-16 decoder and 16 latch circuits. A ny one of the sixteen transm ission gates
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221OO
4-line-to-16
22100 switch
CD22100
cd22100 rca
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M22101 M22102 4 X 4 X 2 CROSSPOINT SWITCHES WITH CONTROL MEMORY • LOW ON RESISTANCE - 75 f i TYP AT V d d = 12 V . "BUILT-IN" LATCHED INPUTS ■ LARGE ANALOG SIGNAL CAPACITY + V dd/2 ■ 10 MHz SW ITCH BANDWITH ■ M ATCHED SWITCH CHARACTERISTICS
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M22101
M22102
M22102
16-line
22101/M
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CD22100E
Abstract: 16-LINE CD22100 CD22100F CD4029 CD22100 ic equivalent
Text: CD22100 S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating January 1997 Features Description • Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch
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CD22100
CD22100
16-line
91-CA
CD22100E
CD22100F
CD4029
CD22100 ic equivalent
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CD22100D
Abstract: CD22100E CD4029 16-LINE CD22100 CD22100F 4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY boonton 91-ca
Text: CD22100 S E M I C O N D U C T O R CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type 20V Rating March 1993 Features Description • Low ON Resistance . . . . . . . . . . 75Ω Typ. at VDD = 12V CD22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch
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CD22100
CD22100
16-line
77VRMS
91-CA
CD22100D
CD22100E
CD4029
CD22100F
4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
boonton 91-ca
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X2Y3
Abstract: 30277
Text: y CD22100 Types Z2. \ 0 0 CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Types 20-Volt Rating The R C A-C D 22100 com bines a 4 x 4 array o f crosspoints (transmission gates) w ith a 4-line-to-16-line decoder and 16 latch c ir cuits. A n y one o f th e sixteen transm ission
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CD22100
20-Volt
4-line-to-16-line
CD22100,
92CM-30279
X2Y3
30277
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