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    40 V, PNP Search Results

    40 V, PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
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    40 V, PNP Price and Stock

    Pan Pacific SCM-40S

    FULLY SHRND POLARZD HEADER 180 DEG Pan Pacific Part Number: SCM-40S
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    Onlinecomponents.com SCM-40S 70
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    • 100 $1.52
    • 1000 $1.36
    • 10000 $1.25
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    Pan Pacific BLS-40

    BLACK LATCH HOUSING 40C SINGLE ROW Pan Pacific Part Number: BLS-40 Priced Per Bag of 50
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    Onlinecomponents.com BLS-40
    • 1 $39.31
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    • 100 $30.76
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    Pan Pacific SCL-40

    Splice Terminal (4/0)AWG Seamless Copper 85.59mm Tin
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    Onlinecomponents.com SCL-40
    • 1 $29.05
    • 10 $27.18
    • 100 $23.08
    • 1000 $22.13
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    Pan Pacific PLS-40S

    40 PIN SINGLE-ROW PIN HEADER Pan Pacific Part Number: PLS-40S
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    Onlinecomponents.com PLS-40S
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    • 100 $0.4038
    • 1000 $0.3232
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    Pan Pacific SBE-40S

    40PIN STRAIGHT 2.0mm DUAL ROW BOX HEADER Pan Pacific Part Number: SBE-40S
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    Onlinecomponents.com SBE-40S
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    • 100 $1.462
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    • 10000 $0.983
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    40 V, PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3199 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175# I(CBO) Max. (A)75u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N3199 PDF

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    Abstract: No abstract text available
    Text: MJE371 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    MJE371 PDF

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    Abstract: No abstract text available
    Text: MJE3371 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    MJE3371 PDF

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    Abstract: No abstract text available
    Text: NSP4918 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    NSP4918 PDF

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    Abstract: No abstract text available
    Text: 2N3867+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


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    2N3867 Freq60M time60n PDF

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    Abstract: No abstract text available
    Text: 2N3867+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


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    2N3867 Freq60M time60n PDF

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    Abstract: No abstract text available
    Text: 2N3867 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


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    2N3867 Freq60M time60n PDF

    2n1127

    Abstract: No abstract text available
    Text: 2N1127 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)500m


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    2N1127 PDF

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    Abstract: No abstract text available
    Text: 2N3867+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


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    2N3867 Freq60M time60n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3867+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)1.0u÷ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)2.5


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    2N3867 Freq60M time60n PDF

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    Abstract: No abstract text available
    Text: GES2904 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    GES2904 Freq200M PDF

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    Abstract: No abstract text available
    Text: 2N1125 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40â V(BR)CBO (V)40 I(C) Max. (A)250m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)75u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    2N1125 PDF

    PN4122

    Abstract: 2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4917 2N3906 TO-92
    Text: This PNP Transistors Material PNP General Purpose Amplifiers and Switches continued V Copyrighted Device No. Case Style 2N3905 TO-92 (92) By 2N3906 TO-92 (92) CBO V CEO V (V) Min (V) Min (V) Min 40 40 5 40 40 V CE(SAT) ’c es* EBO 'C B 0 @ V CB (nA) Max


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    2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4122 PN4917 2N3906 TO-92 PDF

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    Abstract: No abstract text available
    Text: This PNP Transistors Material Discrete POWER & Signal Technologies National semiconductor I Copyrighted Device No. 2N4402 Case Style TO-92 92 p^p ^CBO ^CEO V EBO (V) (V) Min Min (V) Min 40 40 5 'cBO V CB ("A )@ (v, Max ' ' Its TO-92 (92) 40 40 hFE Min 20


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    PDF

    2N5089 equivalent

    Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307 PDF

    2N3903

    Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225mA) 2N4401 PDF

    2N5219

    Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 225tter-Base 2N5219 PDF

    1N5497

    Abstract: SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721
    Text: 29 SILICON POWER TRANSISTORS CUF! R EfsIT GAIN SATURATIOP si V O LTA G ES @ TYPE NUMBER CASE TYPE VCBO V 5 AMP SILICON PNP VCEO V EBO I V I V O b se rve - 80 80 40 40 40 40 hFE MIN. I MAX. M egative P o la r ity 6.0 20 6.0 20 6.0 12 SDT3714 SDT3715 SDT3716


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    SDT3775 SDT3776 SDT3777 SDT3778 2N1487 2N1488 2N1489 2N1490 2N2305 2N5490 1N5497 SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721 PDF

    GES2222A

    Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150mA, GES2222A NPN switching transistor 2N4403 PDF

    GES5307

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device b v CEO Type @ 10m A- V Min. V C E (sa t) E Max. @ l c (mA) V c e (V ) .3 .3 • B j» .4 l» iB 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 150rnA, GES5307 GES93 PDF

    2N5055

    Abstract: 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 2N4389
    Text: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 - TYPE NO. 2N4248 2N4249 2N4250 2N4250A 2N4964 2N4965 2N5086 2N5087 2N5378 2N5379 Vcb V 40 60 40 70 50 50 60 60 40 40 VCE V eb V V 5 40 60 5 40 5 5 60 5 40 40 5 50 3 3 50 30 5 30 5 hFE


    OCR Scan
    2N4389 O-106 2N5055 2N5140 T0-106 2N5141 2N5228 2N5910 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 PDF

    "transistors "

    Abstract: National Pn2907 2N4403 NATIONAL SEMICONDUCTOR
    Text: PNP Transistors » /% Discrete POWER & Signal Technologies National U * Device No. 2N4402 2N4403 Semiconductor Case Style TO-92 92 TO-92 (92) VC B O V CEO VE B O (V) Min (V) Min (V) Min 40 40 5 40 40 p N p 'c B O General Purpose Amplifiers and Switches VC E (SA T )


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    2N4402 2N4403 MPS3702 MPS3703 MPS6534 PN2907 PN2907A "transistors " National Pn2907 2N4403 NATIONAL SEMICONDUCTOR PDF

    2N4121

    Abstract: 2N5855 2N4916 case to106 N5040 2N3639 2N4355 2N4917 2N5383 2N3640
    Text: PNP EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. TYPE NO. Vcb VCE V eb hFE at •c VCE V V V min max mA V 2N4060 2N4061 2N40622N4121 2N4122 30 30 30 40 40 30 30 30 . 40 40 6 6 6 5 5 45 90 180 70 150 _ "— 200 300 1 1 1 10 10 5 5 5 1 1 0.3 0.4 5 5 2N4125


    OCR Scan
    2n4060 to-98 2n4061 2n4062- 2n4121 to-106 2n4122 t0-106 2N5855 2N4916 case to106 N5040 2N3639 2N4355 2N4917 2N5383 2N3640 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-220 Power Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) VcBO (V) Min ^CEO (V) Min Pd (W) (V) Min @Tc=25°c 2N6107 80 70 5 40 7 * 100 2N6109 60 50 5 40 7 2N6111 40 30 5 40 7 2SA614 80


    OCR Scan
    O-220 2N6107 2N6109 2N6111 2SA614 2SA614R 2SA614Y 2SA748 2SA748P 2SA748Q PDF