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    4000 WATT AMPLIFIER DIAGRAM Search Results

    4000 WATT AMPLIFIER DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    4000 WATT AMPLIFIER DIAGRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B

    Untitled

    Abstract: No abstract text available
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF ADL5324 OT-89 O-243 12-18-2008-B OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, D10562-0-3/12

    adl5324

    Abstract: 869MHz
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 12-18-2008-B 869MHz

    ADL5324

    Abstract: 128777 ADL5324ARKZ-R7 GRM155 capacitor 42EVALUATION GRM615COG
    Text: 400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES GND Operation from 400 MHz to 4000 MHz Gain of 14.6 dB at 2140 MHz OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB Dynamically adjustable bias


    Original     		PDF OT-89 ADL5324 ADL5324 12-18-2008-B O-243 OT-89] ADL5324ARKZ-R7 ADL5324-EVALZ OT-89, 128777 GRM155 capacitor 42EVALUATION GRM615COG

    OZ 9976

    Abstract: 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456 AN-60-032
    Text: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide


    Original     		PDF AN-60-032) 50-ohm AN-60-032 M94453 AN60032 OZ 9976 7433 7433 diagram DL1020 DL805 MERA-533 MERA-556 MERA-7433 MERA-7456

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-60-032 Uses and Advantages of “MERA” Dual Matched MMIC Amplifiers 1.0 Introduction The Mini-Circuits ERA and Gali series of amplifiers are monolithic HBT devices in Darlington configuration. They are wide band 50-ohm amplifiers that are easy to use, as they require very few external components. Wide


    Original     		PDF AN-60-032) 50-ohm AN-60-032 M150621 AN60032

    Untitled

    Abstract: No abstract text available
    Text: HMC6741LS7 v01.0414 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 4 Watt POWER AMPLIFIER WITH POWER DETECTOR, 9 - 12 GHz Typical Applications Features The HMC6741LS7 is ideal for: High P1dB Output Power: +36 dBm • Point-to-Point Radios High Psat Output Power: +38 dBm


    Original     		PDF HMC6741LS7 HMC6741LS7

    Untitled

    Abstract: No abstract text available
    Text: HMC6741LS7 v00.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 4 Watt POWER AMPLIFIER WITH POWER DETECTOR , 9 - 12 GHz Typical Applications Features The HMC6741LS7 is ideal for: High P1dB Output Power: +36 dBm • Point-to-Point Radios High Psat Output Power: +38 dBm


    Original     		PDF HMC6741LS7 HMC6741LS7

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC6741LS7 v01.0414 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 4 Watt POWER AMPLIFIER


    Original     		PDF HMC6741LS7 HMC6741LS7

    8c 617 transistor

    Abstract: AD712 AD744 AD746 AD746A AD746B AD746J AD746S EIA-481A audio amplifier circuit diagram 4000 watt
    Text: a FEATURES AC PERFORMANCE 500 ns Settling to 0.01% for 10 V Step 75 V/ ␮s Slew Rate 0.0001% Total Harmonic Distortion THD 13 MHz Gain Bandwidth Internal Compensation for Gains of +2 or Greater Dual Precision, 500 ns Settling, BiFET Op Amp AD746 CONNECTION DIAGRAM


    Original     		PDF AD746 AD746B) EIA-481A MIL-STD-883B AD744 14-Bit C1319 8c 617 transistor AD712 AD744 AD746 AD746A AD746B AD746J AD746S audio amplifier circuit diagram 4000 watt

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES AC PERFORMANCE 500 ns Settling to 0.01% for 10 V Step 75 V/ ␮s Slew Rate 0.0001% Total Harmonic Distortion THD 13 MHz Gain Bandwidth Internal Compensation for Gains of +2 or Greater Dual Precision, 500 ns Settling, BiFET Op Amp AD746 CONNECTION DIAGRAM


    Original     		PDF AD746 AD746B) EIA-481A MIL-STD-883B AD744 C1319â

    AD7464

    Abstract: No abstract text available
    Text: BACK a FEATURES AC PERFORMANCE 500 ns Settling to 0.01% for 10 V Step 75 V/ ␮s Slew Rate 0.0001% Total Harmonic Distortion THD 13 MHz Gain Bandwidth Internal Compensation for Gains of +2 or Greater Dual Precision, 500 ns Settling, BiFET Op Amp AD746 CONNECTION DIAGRAM


    Original     		PDF AD746B) EIA-481A MIL-STD-883B AD744 14-Bit AD746 AD7464

    tl074 tl084

    Abstract: tl084 replacement AD713 Audio amplifier Circuit using TL084 ic TL074 APPLICATION NOTES ic TL074 AD711 AD712 LF347 TL084
    Text: a Quad Precision, Low Cost, High Speed, BiFET Op Amp AD713 FEATURES Enhanced Replacement for LF347 and TL084 CONNECTION DIAGRAMS AC PERFORMANCE 1 ms Settling to 0.01% for 10 V Step 20 V/ms Slew Rate 0.0003% Total Harmonic Distortion THD 4 MHz Unity Gain Bandwidth


    Original     		PDF AD713 LF347 TL084 AD713K) 14-Bit AD711, AD712 16-Pin tl074 tl084 tl084 replacement AD713 Audio amplifier Circuit using TL084 ic TL074 APPLICATION NOTES ic TL074 AD711 AD712 TL084

    7M9102

    Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
    Text: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz


    Original     		PDF TQP7M9102 OT-89 TQP7M9102 7M9102 schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9

    tqp7m9102

    Abstract: 7M9102 Mhz 434 C1 SOT89
    Text: TQP7M9102 ½W High Linearity Amplifier Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz +27.5 dBm P1dB +44 dBm Output IP3 17.8 dB Gain @ 2140 MHz


    Original     		PDF TQP7M9102 OT-89 TQP7M9102 7M9102 Mhz 434 C1 SOT89

    AD746JR

    Abstract: No abstract text available
    Text: a FEATURES AC PERFORMANCE 500 ns Settling to 0.01% for 10 V Step 75 V/ ␮s Slew Rate 0.0001% Total Harmonic Distortion THD 13 MHz Gain Bandwidth Internal Compensation for Gains of +2 or Greater Dual Precision, 500 ns Settling, BiFET Op Amp AD746 CONNECTION DIAGRAM


    Original     		PDF AD746B) EIA-481A MIL-STD-883B AD744 14-Bit AD746 AD746SQ/883B AD746JR

    7M9102

    Abstract: TQP7M9102 06032U2R7BAT2A N4000-13 06032U5R6BAT2A 0805CS-330XJLB LL1608-FSL2N2S CS Coilcraft c3 sot89 d1004
    Text: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz


    Original     		PDF TQP7M9102 OT-89 TQP7M9102 7M9102 06032U2R7BAT2A N4000-13 06032U5R6BAT2A 0805CS-330XJLB LL1608-FSL2N2S CS Coilcraft c3 sot89 d1004

    FP11G

    Abstract: FP1189-G
    Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 FP11G FP1189-G

    RFID ID-20

    Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189-PCB1900S 25c021

    RFID ID-20

    Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
    Text: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 RFID ID-20 marking c7 sot-89 113 marking code transistor ROHM FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm

    FP11G

    Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
    Text: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain


    Original     		PDF FP1189 FP1189 OT-89 WJ1-4401 FP11G 113 marking code transistor ROHM FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S

    Untitled

    Abstract: No abstract text available
    Text: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 OT-89 FP1189 1-800-WJ1-4401

    FP11G

    Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
    Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET


    Original     		PDF FP1189 FP1189 OT-89 1-800-WJ1-4401 FP11G fp1189-g rfid reader id-20 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP

    Untitled

    Abstract: No abstract text available
    Text: Ultralow Noise, High Speed, BiFET Op Amp AD745 ANALOG DEVICES □ CONNECTION DIAGRAMS 8-Pin Plastic Mini-DIP N & 16-Pin SOIC (R) Package FEATURES ULTRALOW NOISE PERFORMANCE 2.9 n V /V H z at 10 kHz 0.38 (xV p -p , 0.1 Hz to 10 Hz 6.9 fA /V H z Current Noise at 1 kHz


    OCR Scan     		PDF AD745 16-Pin EIA-481A AD745â AD745.