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    400A GENX3TM IGBTS IN NEW PROPRIETARY SMPD POWER PACKAGES Search Results

    400A GENX3TM IGBTS IN NEW PROPRIETARY SMPD POWER PACKAGES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

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    400A GenX3TM IGBTs in New Proprietary SMPD Power Packages

    Abstract: IXYS smpd IXYS MMIX1G320N60B3 solar ups features and classification
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Introduces 600V/400A GenX3TM IGBTs in New Proprietary SMPD Power Packages Milpitas, CA. and Biel, Switzerland. October 12, 2010 – IXYS Corporation NASDAQ:IXYS is pleased to


    Original     		PDF 00V/400A MMIX1G320N60B3 400A GenX3TM IGBTs in New Proprietary SMPD Power Packages IXYS smpd IXYS solar ups features and classification