CEFF630
Abstract: No abstract text available
Text: PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10 A , Rds on =400itiQ @Vgs=1 0V • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-220F full-pak for through hole.
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CEFF630
400mQ
O-220F
to-220f
CEFF630
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transistor f630
Abstract: f630 power transistor f630 bf630 CEPF630 CD108
Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10A, Rds on =400itiQ @VGS=10V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES
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400itiQ
O-220
O-263
to-263
to-220
F630/C
transistor f630
f630
power transistor f630
bf630
CEPF630
CD108
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CEM9400
Abstract: No abstract text available
Text: CEM9400 PRELIM INARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • - 2 0 V , - 2 .5 A , RDS ON =250mQ @ V gs =-10V. R ds(on)=400itiQ @ V gs =-4.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.
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CEM9400
250mQ
400itiQ
CEM9400
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