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    400V 3A ULTRA FAST RECOVERY DIODE Search Results

    400V 3A ULTRA FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    400V 3A ULTRA FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ITO-220AB

    Abstract: UERP06G
    Text: UERP06G Ultra fast Plastic Power Rectifiers VOLTAGE: 400V CURRENT: 6.0A FEATURE ITO-220AB • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes


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    UERP06G ITO-220AB ITO-220AB MIL-STD-750, UERP06G PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481. PDF

    igbt based welding machine

    Abstract: IRFR12
    Text: PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features • Standard speed IGBT for switching frequency less than 1KHz • Very low VCE ON • Ultra fast soft recovery diode C VCES = 600V IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A


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    IRG7RC07SDPbF 50/60Hz EIA-481 EIA-541. EIA-481. igbt based welding machine IRFR12 PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    07N65

    Abstract: fusible 1a SMD LN4148 10471 VARISTOR
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19


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    ACT51X 2012-Octâ ACT512 PC817C -26For 07N65 fusible 1a SMD LN4148 10471 VARISTOR PDF

    block diagram of schottky diode

    Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
    Text: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes


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    RR264M-400 RB491D A/20V) RSX101M-30 A/30V) 47P4871E block diagram of schottky diode EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


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    FDD5N50U FDD5N50U 50nsec 200nsec PDF

    RA0097

    Abstract: RA0097A 200v 3A ultra fast recovery diode 3A, 100V BRIDGE-RECTIFIER FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER 3A, 50V BRIDGE-RECTIFIER 400v 3a ultra fast recovery diode 25A, 50V BRIDGE-RECTIFIER 3A, 400V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 1A
    Text: SDA267AUF thru SDA267GUF Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS 50 ─ 1000 VOLTS ULTRA FAST RECOVERY SINGLE PHASE BRIDGE RECTIFIER Designer’s Data Sheet


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    SDA267AUF SDA267GUF SDA267 RA0097A RA0097 RA0097A 200v 3A ultra fast recovery diode 3A, 100V BRIDGE-RECTIFIER FAST RECOVERY SINGLE-PHASE BRIDGE RECTIFIER 3A, 50V BRIDGE-RECTIFIER 400v 3a ultra fast recovery diode 25A, 50V BRIDGE-RECTIFIER 3A, 400V BRIDGE-RECTIFIER BRIDGE-RECTIFIER 1A PDF

    Untitled

    Abstract: No abstract text available
    Text: SDA267AUF thru SDA267GUF Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 10 AMPS 50 1000 VOLTS ULTRA FAST RECOVERY SINGLE PHASE BRIDGE RECTIFIER Designer’s Data Sheet


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    SDA267AUF SDA267GUF SDA267 RA0097A PDF

    Untitled

    Abstract: No abstract text available
    Text: FGD3N60UNDF 600 V, 3 A Short Circuit Rated IGBT Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Features Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.


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    FGD3N60UNDF FGD3N60UNDF O-252 PDF

    FDD5N50UTM

    Abstract: FDD5N50U FDD5N50UTF
    Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


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    FDD5N50U FDD5N50U FDD5N50UTM FDD5N50UTF PDF

    Untitled

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


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    FDD5N50U FDD5N50U PDF

    FGD3N60UNDF

    Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
    Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us


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    FGD3N60UNDF FGD3N60UNDF O-252 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING PDF

    APT5F100K

    Abstract: MIC4452 1000v5a
    Text: APT5F100K 1000V, 5A 2.8Ω Max, Trr ≤ 155nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced


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    APT5F100K 155nS O-220 FREDFE42 APT5F100K MIC4452 1000v5a PDF

    30VF30

    Abstract: 30VF30F 30VF40 30VF40F T0-252 T0252
    Text: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300— 400V/trr : 30nsec FEATURES o TO-251AA Case o TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery o Low Forward Voltage Drop • Low Power Loss 30VF*•F TO-252AA j I ® o High Surge Capability


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    A/300â 00V/trr 30nsec 30VF30 30VF40 30VF30F 30VF40F O-251AA O-252AA 30VF40F T0-252 T0252 PDF

    GE234

    Abstract: No abstract text available
    Text: MES1304 MES1305 MES1306 Microsemi Corp. ' The diode experts SANTA A N A . CA SCOTTSDALE, A Z F o r m ore in fo rm a tio n call: 7I4 9 7 9 -8 2 2 0 Ultra Fast Switching Rectifier FEATURES • M IC R O M IN IA TU R E PACK AGE f*— .040 NOM. DIA. \ i • VDIDLESS HERM ETICALLY SEALED G U S S PACKAGE


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    MES1304 MES1305 MES1306 MES1301 MES1303 GE234 PDF

    1451AQ

    Abstract: No abstract text available
    Text: / Microsemi Corp. M E S 1304 M E S 1305 M E S 1306 ’ The diode experts S A N T A A N A , CA F o r m o re in fo rm a tio n call: 714 9 7 9 -8 2 2 0 U ltra Fast S w itching R ectifier FEA TU RES • MICROMINIATURE PACKAGE • .040 NOM. DIA. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~ 400V/trr : 30nsec 2.38M AX .094 FEATURES 2.38M AX (.0941 • TO-251AA Case n o TO-252AA Case, Surface Mount Device ^, 6.221245) 0.9(.035) NO M IN AL ° Ultra - Fast Recovery 2.8 N O M IN AL '(-059)


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    30VF30 30VF40 30VF30F 30VF40F A/300~ 00V/trr 30nsec O-251AA O-252AA PDF

    400v 3a ultra fast recovery diode

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 3.3A /300— 400V /trr : 30nsec 31DF3 31DF4 FEATURES $ -5.8 .23>D IA ° Ultra - Fast Recovery L o w Forward Voltage Drop ° L o w P o w e r Loss, 1.5(.059)n r , 1.3(.051) High Efficiency 21(.83) MIN ° High Surge Capability ° 100 Vo l t s t h r u 600 V o l t s Ty p e s A v a i l a b l e


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    30nsec 31DF3 31DF4 31DF3 400v 3a ultra fast recovery diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE C6P30F C6P40F F6P30F F6P40F 6.6A/300 — 400V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type 0 Dual Diodes - Cathode Common * Ultra - Fast Recovery * Low Forward Voltage Drop » High Surge Capability ° 100 Volts thru 600 Volts Types


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    C6P30F C6P40F F6P30F F6P40F A/300 00V/trr 30nsec T0-220AB C6P30F PDF

    F6P40F

    Abstract: C6P40F F6P30F ultra low drop forward voltage diode C6P30F 400v 3a ultra fast recovery diode F6P3
    Text: FAST RECOVERY DIODE 6.6A/300~400V/lrr :3 0 n s « F6P30F F6P40F 3.K.122 MAX FEATURES P 10.3 .405) M AX 4.8U 89) MAXj °Similar to T0-220AB Case ° Fully Mold Isolation (F-Type) 6.9C272) 6.3(.248) 2.85(.112) 15.4(.606) 14.8(.583) 0 Dual Diodes - Cathode Common


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    A/300 00V/1 30nsec C6P30F C6P40F F6P30F F6P40F T0-220AB 16DMAX C6P30F F6P40F ultra low drop forward voltage diode 400v 3a ultra fast recovery diode F6P3 PDF

    400v 3a ultra fast recovery diode

    Abstract: C6P40F F6P40F mml 600 C6P30F F6P30F K-122
    Text: FAST RECOVERY DIODE C6P30F C6P40F F6P30F F6P40F 6.6A/300 — 400V/trr : 30nsec 3.K.122 MAX ,^10.3 .405) 3.4U34), / m m L i_4.8(-189l MAXj — ?— 6.&I.272) 53(245) 2.55(.1U0> 15.4(.606) 14.W.583) FEATURES ° Similar to TO-220AB Case °Fully Mold Isolation (F-Type)


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    A/300 00V/trr 30nsec C6P30F C6P40F F6P30F F6P40F O-220AB C6P30F 400v 3a ultra fast recovery diode F6P40F mml 600 K-122 PDF

    30VF30

    Abstract: 30VF30F 30VF40 30VF40F
    Text: FAST RECOVERY DIODE 30VF30 30VF40 30VF30F 30VF40F 3.3A/300~400V/trr : 30nsec FEATURES TO-251AA Case • TO-252AA Case, Surface Mount Device ° Ultra - Fast Recovery o Low Forward Voltage Drop ° Low Power Loss o High Surge Capability ® 100 Volts thru 600 Volts


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    A/300 00V/trr 30nsec 30VF30 30VF40 30VF30F 30VF40F O-251AA O-252AA 30VF40F PDF

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 30KF30E 30KF40E 30KF30B 30KF40B 33A/300~400V/trr : 60nsec 5.31209 DIA 4.7U85) FEATURES • Similar to TO-247AC Case ? 0 Ultra - Past Recovery 20.3 800) 19:7(775) • Low Forward Voltage Drop <>Low Power Loss, High 2.2(.087) 3.2(.126)


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    30KF30E 30KF40E 30KF30B 30KF40B 3A/300 00V/trr 60nsec O-247AC 8C031) 30KF3RM PDF